公开(公告)号：US08848374B2

公开(公告)日：2014-09-30

申请号：US12827742

申请日：2010-06-30

申请人： Jian-Hong Lin ,  Chin Chuan Peng ,  Tzu-Li Lee ,  Bi-Ling Lin ,  Bor-Jou Wei ,  Chien Shih Tsai

发明人： Jian-Hong Lin ,  Chin Chuan Peng ,  Tzu-Li Lee ,  Bi-Ling Lin ,  Bor-Jou Wei ,  Chien Shih Tsai

IPC分类号： H05K7/20 ,  H01L49/02 ,  H01L23/522 ,  H01L23/367

CPC分类号： H01L28/20 ,  H01L23/3677 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure for dissipating heat away from a resistor having neighboring devices and interconnects. The semiconductor structure includes a semiconductor substrate, a resistor disposed above the semiconductor substrate, and a thermal protection structure disposed above the resistor. The thermal protection structure has a plurality of heat dissipating elements, the heat dissipating elements having one end disposed in thermal conductive contact with the thermal protection structure and the other end in thermal conductive contact with the semiconductor substrate. The thermal protection structure receives the heat generated from the resistor and the heat dissipating elements dissipates the heat to the semiconductor substrate.

摘要翻译： 一种半导体结构，用于从具有相邻器件和互连的电阻器散热。 半导体结构包括半导体衬底，设置在半导体衬底之上的电阻器和设置在电阻器上方的热保护结构。 热保护结构具有多个散热元件，散热元件的一端设置成与热保护结构导热接触，另一端与半导体衬底导热接触。 热保护结构接收从电阻器产生的热量，并且散热元件将热量散发到半导体衬底。

公开(公告)号：US07646207B2

公开(公告)日：2010-01-12

申请号：US11849836

申请日：2007-09-04

申请人： Jian-Hong Lin ,  Chin Chuan Peng ,  Shou-Chung Lee ,  Chien-Jung Wang ,  Chien Shih Tsai ,  Bi-Ling Lin ,  Yi-Lung Cheng

发明人： Jian-Hong Lin ,  Chin Chuan Peng ,  Shou-Chung Lee ,  Chien-Jung Wang ,  Chien Shih Tsai ,  Bi-Ling Lin ,  Yi-Lung Cheng

IPC分类号： G01R27/08

CPC分类号： G01R31/2858 ,  G01R31/2853 ,  G01R31/2884 ,  H01L22/14 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for measuring a property of interconnections is provided. The method includes the following steps. A plurality of interconnection test patterns are provided. A pad to which the plurality of interconnection test patterns are parallelly connected is formed. At least one resistor is formed between at least one of the plurality of interconnection test patterns and the pad. The property of the plurality of interconnection test patterns is measured by applying a current, a voltage and/or a mechanical stress to the pad.

摘要翻译： 提供了一种用于测量互连性质的方法。 该方法包括以下步骤。 提供多个互连测试图案。 形成多个互连测试图案并联连接的焊盘。 至少一个电阻器形成在所述多个互连测试图案中的至少一个与所述焊盘之间。 通过对焊盘施加电流，电压和/或机械应力来测量多个互连测试图案的性质。

公开(公告)号：US20120002375A1

公开(公告)日：2012-01-05

申请号：US12827742

申请日：2010-06-30

申请人： Jian-Hong LIN ,  Chin Chuan PENG ,  Tzu-Li LEE ,  Bi-Ling LIN ,  Bor-Jou WEI ,  Chien Shih TSAI

发明人： Jian-Hong LIN ,  Chin Chuan PENG ,  Tzu-Li LEE ,  Bi-Ling LIN ,  Bor-Jou WEI ,  Chien Shih TSAI

IPC分类号： H05K7/20 ,  H01L21/02

CPC分类号： H01L28/20 ,  H01L23/3677 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure for dissipating heat away from a resistor having neighboring devices and interconnects. The semiconductor structure includes a semiconductor substrate, a resistor disposed above the semiconductor substrate, and a thermal protection structure disposed above the resistor. The thermal protection structure has a plurality of heat dissipating elements, the heat dissipating elements having one end disposed in thermal conductive contact with the thermal protection structure and the other end in thermal conductive contact with the semiconductor substrate. The thermal protection structure receives the heat generated from the resistor and the heat dissipating elements dissipates the heat to the semiconductor substrate.

摘要翻译： 一种半导体结构，用于从具有相邻器件和互连的电阻器散热。 半导体结构包括半导体衬底，设置在半导体衬底之上的电阻器和设置在电阻器上方的热保护结构。 热保护结构具有多个散热元件，散热元件的一端设置成与热保护结构导热接触，另一端与半导体衬底导热接触。 热保护结构接收从电阻器产生的热量，并且散热元件将热量散发到半导体衬底。

公开(公告)号：US20090058434A1

公开(公告)日：2009-03-05

申请号：US11849836

申请日：2007-09-04

申请人： Jian-Hong Lin ,  Chin Chuan Peng ,  Shou-Chung Lee ,  Chien-Jung Wang ,  Chien Shih Tsai ,  Bi-Ling Lin ,  Yi-Lung Cheng

发明人： Jian-Hong Lin ,  Chin Chuan Peng ,  Shou-Chung Lee ,  Chien-Jung Wang ,  Chien Shih Tsai ,  Bi-Ling Lin ,  Yi-Lung Cheng

IPC分类号： G01R27/00

CPC分类号： G01R31/2858 ,  G01R31/2853 ,  G01R31/2884 ,  H01L22/14 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for measuring a property of interconnections is provided. The method includes the following steps. A plurality of interconnection test patterns are provided. A pad to which the plurality of interconnection test patterns are parallelly connected is formed. At least one resistor is formed between at least one of the plurality of interconnection test patterns and the pad. The property of the plurality of interconnection test patterns is measured by applying a current, a voltage and/or a mechanical stress to the pad.

摘要翻译： 提供了一种用于测量互连性质的方法。 该方法包括以下步骤。 提供多个互连测试图案。 形成多个互连测试图案并联连接的焊盘。 至少一个电阻器形成在所述多个互连测试图案中的至少一个与所述焊盘之间。 通过对焊盘施加电流，电压和/或机械应力来测量多个互连测试图案的性质。