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公开(公告)号：US07863748B2
公开(公告)日：2011-01-04
申请号：US12397309
申请日：2009-03-03
申请人： ChoonSik Oh , Lee Sang-Yun
发明人： ChoonSik Oh , Lee Sang-Yun
IPC分类号： H01L27/10
CPC分类号： H01L21/2007 , H01L21/8221 , H01L24/29 , H01L24/83 , H01L27/0688 , H01L2224/291 , H01L2224/2919 , H01L2224/8385 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： A bonded semiconductor structure includes a support substrate which carries a first electronic circuit, and an interconnect region carried by the support substrate. The interconnect region includes a capacitor and conductive line in communication with the first electronic circuit. The circuit includes a bonding layer carried by the interconnect region, and a bonded substrate coupled to the interconnect region through the bonding layer.
摘要翻译： 键合半导体结构包括承载第一电子电路的支撑基板和由支撑基板承载的互连区域。 互连区域包括与第一电子电路连通的电容器和导线。 电路包括由互连区承载的接合层，以及通过接合层耦合到互连区的键合衬底。
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公开(公告)号：US20080191312A1
公开(公告)日：2008-08-14
申请号：US12040642
申请日：2008-02-29
申请人： ChoonSik Oh , Sang-Yun Lee
发明人： ChoonSik Oh , Sang-Yun Lee
CPC分类号： H01L21/2007 , H01L21/8221 , H01L24/29 , H01L24/83 , H01L27/0688 , H01L27/11551 , H01L2224/291 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011
摘要： A semiconductor memory device includes a substrate and an interconnect region carried by the substrate. A donor layer is coupled to the interconnect region through a bonding interface. An electronic device is formed with the donor layer, wherein the electronic device is formed after the bonding interface is formed. A capacitor is connected to the electronic device so that the electronic device and capacitor operate as a dynamic random access memory device.
摘要翻译： 半导体存储器件包括衬底和由衬底承载的互连区域。 供体层通过接合界面耦合到互连区域。 电子器件形成有施主层，其中在形成接合界面之后形成电子器件。 电容器连接到电子设备，使得电子设备和电容器作为动态随机存取存储器件操作。
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公开(公告)号：US07800199B2
公开(公告)日：2010-09-21
申请号：US12040642
申请日：2008-02-29
申请人： ChoonSik Oh , Sang-Yun Lee
发明人： ChoonSik Oh , Sang-Yun Lee
IPC分类号： H01L21/46
CPC分类号： H01L21/2007 , H01L21/8221 , H01L24/29 , H01L24/83 , H01L27/0688 , H01L27/11551 , H01L2224/291 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01042 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011
摘要： A semiconductor memory device includes a substrate and an interconnect region carried by the substrate. A donor layer is coupled to the interconnect region through a bonding interface. An electronic device is formed with the donor layer, wherein the electronic device is formed after the bonding interface is formed. A capacitor is connected to the electronic device so that the electronic device and capacitor operate as a dynamic random access memory device.
摘要翻译： 半导体存储器件包括衬底和由衬底承载的互连区域。 供体层通过接合界面耦合到互连区域。 电子器件形成有施主层，其中在形成接合界面之后形成电子器件。 电容器连接到电子设备，使得电子设备和电容器作为动态随机存取存储器件操作。
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公开(公告)号：US20090224364A1
公开(公告)日：2009-09-10
申请号：US12397309
申请日：2009-03-03
申请人： ChoonSik Oh , Sang-Yun Lee
发明人： ChoonSik Oh , Sang-Yun Lee
CPC分类号： H01L21/2007 , H01L21/8221 , H01L24/29 , H01L24/83 , H01L27/0688 , H01L2224/291 , H01L2224/2919 , H01L2224/8385 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/07802 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： A bonded semiconductor structure includes a support substrate which carries a first electronic circuit, and an interconnect region carried by the support substrate. The interconnect region includes a capacitor and conductive line in communication with the first electronic circuit. The circuit includes a bonding layer carried by the interconnect region, and a bonded substrate coupled to the interconnect region through the bonding layer.
摘要翻译： 键合半导体结构包括承载第一电子电路的支撑基板和由支撑基板承载的互连区域。 互连区域包括与第一电子电路连通的电容器和导线。 电路包括由互连区承载的接合层，以及通过接合层耦合到互连区的键合衬底。
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