公开(公告)号：US10242880B2

公开(公告)日：2019-03-26

申请号：US15645419

申请日：2017-07-10

申请人： Kwangsu Kim ,  Se-Ho Cha ,  Yongsun Ko ,  Keonyoung Kim ,  Kyunghyun Kim ,  ChangSup Mun ,  Choongkee Seong ,  Sunjoong Song ,  Jinwoo Lee ,  Hoon Han

发明人： Kwangsu Kim ,  Se-Ho Cha ,  Yongsun Ko ,  Keonyoung Kim ,  Kyunghyun Kim ,  ChangSup Mun ,  Choongkee Seong ,  Sunjoong Song ,  Jinwoo Lee ,  Hoon Han

IPC分类号： H01L21/311 ,  H01L21/306 ,  H01L21/4757 ,  H01L21/02 ,  H01L21/67 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

摘要： Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.

公开(公告)号：US20180102254A1

公开(公告)日：2018-04-12

申请号：US15645419

申请日：2017-07-10

申请人： Kwangsu Kim ,  Se-Ho CHA ,  Yongsun KO ,  Keonyoung KIM ,  Kyunghyun KIM ,  ChangSup MUN ,  Choongkee SEONG ,  Sunjoong SONG ,  Jinwoo LEE ,  Hoon HAN

发明人： Kwangsu Kim ,  Se-Ho CHA ,  Yongsun KO ,  Keonyoung KIM ,  Kyunghyun KIM ,  ChangSup MUN ,  Choongkee SEONG ,  Sunjoong SONG ,  Jinwoo LEE ,  Hoon HAN

IPC分类号： H01L21/306 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11582

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/31111 ,  H01L21/47573 ,  H01L21/67086 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath,