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公开(公告)号:US10242880B2
公开(公告)日:2019-03-26
申请号:US15645419
申请日:2017-07-10
申请人: Kwangsu Kim , Se-Ho Cha , Yongsun Ko , Keonyoung Kim , Kyunghyun Kim , ChangSup Mun , Choongkee Seong , Sunjoong Song , Jinwoo Lee , Hoon Han
发明人: Kwangsu Kim , Se-Ho Cha , Yongsun Ko , Keonyoung Kim , Kyunghyun Kim , ChangSup Mun , Choongkee Seong , Sunjoong Song , Jinwoo Lee , Hoon Han
IPC分类号: H01L21/311 , H01L21/306 , H01L21/4757 , H01L21/02 , H01L21/67 , H01L27/11582 , H01L27/1157 , H01L27/11565
摘要: Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.
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2.
公开(公告)号:US20180211830A1
公开(公告)日:2018-07-26
申请号:US15841946
申请日:2017-12-14
申请人: Hoyoung Kim , Hyo-Sun Lee , Soojin Kim , Keonyoung Kim , Jinhye Bae , Hoon Han , Tae Soo Kwon , Jung Hun Lim
发明人: Hoyoung Kim , Hyo-Sun Lee , Soojin Kim , Keonyoung Kim , Jinhye Bae , Hoon Han , Tae Soo Kwon , Jung Hun Lim
CPC分类号: H01L21/02068 , C11D7/08 , C11D7/261 , C11D7/264 , C11D7/266 , C11D7/3209 , C11D7/3218 , C11D11/0047 , H01L21/02057 , H01L21/304 , H01L21/30604 , H01L21/30625 , H01L21/6835 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2221/68327 , H01L2221/68381 , H01L2224/03002 , H01L2224/0401 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/06181 , H01L2224/1181 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16145 , H01L2224/16227 , H01L2224/17181 , H01L2224/81193 , H01L2224/81815 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/10252 , H01L2924/10253 , H01L2924/15311 , H01L2924/3512 , H01L2924/37001 , H01L2224/11 , H01L2224/03
摘要: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less than 90 wt %, quaternary ammonium salt, and primary amine.
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公开(公告)号:US20180102254A1
公开(公告)日:2018-04-12
申请号:US15645419
申请日:2017-07-10
申请人: Kwangsu Kim , Se-Ho CHA , Yongsun KO , Keonyoung KIM , Kyunghyun KIM , ChangSup MUN , Choongkee SEONG , Sunjoong SONG , Jinwoo LEE , Hoon HAN
发明人: Kwangsu Kim , Se-Ho CHA , Yongsun KO , Keonyoung KIM , Kyunghyun KIM , ChangSup MUN , Choongkee SEONG , Sunjoong SONG , Jinwoo LEE , Hoon HAN
IPC分类号: H01L21/306 , H01L21/67 , H01L21/311 , H01L21/02 , H01L27/11582
CPC分类号: H01L21/30604 , H01L21/0217 , H01L21/31111 , H01L21/47573 , H01L21/67086 , H01L27/11565 , H01L27/1157 , H01L27/11582
摘要: Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath,
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