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1.发明申请Component of Quartz Glass for Use in Semiconductor Manufacture and Method for Producing the Same 有权用于半导体制造的石英玻璃的组成部分及其制造方法公开(公告)号：US20090163344A1
公开(公告)日：2009-06-25
申请号：US12226861
申请日：2007-09-04
CPC分类号： C03C3/06 , C03B19/06 , C03B19/066 , C03B20/00 , C03B2201/07 , C03B2201/075 , C03B2201/24 , C03B2201/34 , C03B2201/36 , C03C4/20 , C03C2201/23 , C03C2201/24 , C03C2201/3411 , C03C2201/3435 , C03C2203/10 , C03C2203/54
摘要： The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.
摘要翻译： 本发明从用于半导体制造的石英玻璃的已知组件开始，至少在近表面区域中的该组分表现出第一掺杂剂和第二氧化物掺杂剂的共掺杂，所述第二掺杂剂含有一种或多种稀有金属 - 浓度为0.1-3重量％的矿物金属。 每个（基于SiO 2和掺杂剂的总质量）。 从此开始，为了在具有蚀刻作用的环境中提供用于半导体制造的石英玻璃组分，该组分通过高纯度和高耐干蚀刻性而被区分，并避免了与氧化铝共掺杂引起的已知缺点。 根据本发明建议第一掺杂剂应为氮，并且石英玻璃的亚稳态羟基的平均含量小于30重量ppm。
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2.发明授权Component of quartz glass for use in semiconductor manufacture and method for producing the same 有权用于半导体制造的石英玻璃的组分及其制造方法公开(公告)号：US08017536B2
公开(公告)日：2011-09-13
申请号：US12226861
申请日：2007-09-04
CPC分类号： C03C3/06 , C03B19/06 , C03B19/066 , C03B20/00 , C03B2201/07 , C03B2201/075 , C03B2201/24 , C03B2201/34 , C03B2201/36 , C03C4/20 , C03C2201/23 , C03C2201/24 , C03C2201/3411 , C03C2201/3435 , C03C2203/10 , C03C2203/54
摘要： The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.
摘要翻译： 本发明从用于半导体制造的石英玻璃的已知组件开始，至少在近表面区域中的该组分表现出第一掺杂剂和第二氧化物掺杂剂的共掺杂，所述第二掺杂剂含有一种或多种稀有金属 - 浓度为0.1-3重量％的矿物金属。 每个（基于SiO 2和掺杂剂的总质量）。 从此开始，为了在具有蚀刻作用的环境中提供用于半导体制造的石英玻璃组分，该组分通过高纯度和高耐干蚀刻性而被区分，并避免了与氧化铝共掺杂引起的已知缺点。 根据本发明建议第一掺杂剂应为氮，并且石英玻璃的亚稳态羟基的平均含量小于30重量ppm。
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3.发明授权
公开(公告)号：US5807416A
公开(公告)日：1998-09-15
申请号：US714209
申请日：1996-09-16
CPC分类号： C03C17/3488 , C03C17/22 , C03C17/3435 , C03C17/3441 , C03C17/3482 , C03C2217/282
摘要： A silica glass member shows a glassy carbon coating wherein a surface of a silica glass substrate of the silica glass member shows a mean surface roughness (R.sub.a) in a range of 0.03 .mu.m to 2 .mu.m and it is coated with a glassy carbon coating. The member is manufactured by chemically roughening the substrate to a surface roughness in the above recited range; coating the surface of the silica glass substrate with an organic raw material containing carbon, curing and thereafter carbonizing the film of the organic raw material by forming a glassy carbon coating.
摘要翻译： 石英玻璃构件显示玻璃碳涂层，其中石英玻璃构件的石英玻璃基板的表面的平均表面粗糙度（Ra）在0.03μm至2μm的范围内，并且涂覆有玻璃碳涂层 。 该构件通过以下方式制造：将基底化学粗化至上述范围内的表面粗糙度; 用含碳的有机原料涂覆石英玻璃基板的表面，固化，然后通过形成玻璃碳涂层对有机原料的膜进行碳化。
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