Aqueous binders granulated and/or fibrous substrates
    2.
    发明授权
    Aqueous binders granulated and/or fibrous substrates 有权
    水性粘合剂造粒和/或纤维底物

    公开(公告)号:US09068070B2

    公开(公告)日:2015-06-30

    申请号:US13119090

    申请日:2009-09-15

    IPC分类号: C08L33/02

    摘要: Aqueous binders for granular and/or fibrous substrates comprising as active constituents: a) at least one polymer which is obtainable by free-radical addition polymerization and comprises in copolymerized form ≧5.5% and ≧20% by weight of an α,β-ethylenically unsaturated monocarboxylic or dicarboxylic acid [polymer A], b) at least one polymer which is obtainable by free-radical addition polymerization and comprises in copolymerized form ≧40% by weight of an α,β-ethylenically unsaturated monocarboxylic or dicarboxylic acid [polymer B], and c) at least one polyol compound having at least two hydroxyl groups [polyol C].

    摘要翻译: 用于包含作为活性成分的颗粒和/或纤维底物的水性粘合剂:a)至少一种可通过自由基加成聚合获得的聚合物,并且以共聚形式包含≥5.5%和≥20重量%的α, 烯键式不饱和单羧酸或二羧酸[聚合物A],b)至少一种可通过自由基加成聚合获得的聚合物,并且包含共聚形式≥40重量%的α,b-烯属不饱和单羧酸或二羧酸[ 聚合物B]和c)至少一种具有至少两个羟基的多元醇化合物[多元醇C]。

    LOW PROFILE SELF-LIGATING ORTHODONTIC APPLIANCE WITH CLIP
    5.
    发明申请
    LOW PROFILE SELF-LIGATING ORTHODONTIC APPLIANCE WITH CLIP 有权
    低档型自动对焦矫正器具

    公开(公告)号:US20140065566A1

    公开(公告)日:2014-03-06

    申请号:US13056171

    申请日:2009-07-27

    IPC分类号: A61C7/30

    摘要: An orthodontic appliance includes a body (16) and at least one clip (36) connected to the body for retaining an archwire in an archwire slot (18). The body and each clip have matching, generally oval-shaped external profiles that present a compact, low-profile configuration. Each clip includes at least one prong (46) that engages a tab for helping to retain the clip in connected relationship to the body. Each tab is connected to the body by a protrusion that has a top surface coplanar with a bottom wall of the archwire slot.

    摘要翻译: 正畸装置包括主体(16)和连接到主体的至少一个夹子(36),用于将弓丝保持在弓丝槽(18)中。 主体和每个夹具具有匹配的,通常为椭圆形的外部轮廓,呈现出紧凑的低轮廓配置。 每个夹子包括至少一个尖头(46),其接合突片以帮助将夹子保持在与身体相关联的关系中。 每个突片通过具有与弓丝槽的底壁共面的顶表面的突起连接到主体。

    System to manufacture custom orthodontic appliances, program product, and related methods
    7.
    发明申请
    System to manufacture custom orthodontic appliances, program product, and related methods 有权
    制造定制矫正器具,程序产品和相关方法的系统

    公开(公告)号:US20070178423A1

    公开(公告)日:2007-08-02

    申请号:US11583103

    申请日:2006-10-18

    IPC分类号: A61C3/00 A61C13/00

    摘要: A system to manufacture orthodontic appliances, program product, and associated methods are provided. An embodiment of a system can include a virtual orthodontic appliance design computer having orthodontic appliance design program product provided to design a virtual dimensional representation of an orthodontic appliance including bracket bodies and bracket pads, and a mold apparatus positioned to form each bracket body and bracket pad. The system also includes a data processing computer including computer-aided manufacturing program product provided to derive electrical discharge device control instructions including a virtual dimensional representation of a bracket slot in the bracket, and an electrical discharge machining apparatus. The electrical discharge machining apparatus can include a controller including control program product to derive a control signal carrying the electrical discharge device control instructions and an electrical discharge device.

    摘要翻译: 提供了制造矫形器具,程序产品和相关方法的系统。 系统的一个实施例可以包括具有矫正器具设计程序产品的虚拟矫正器具设计计算机,用于设计包括支架主体和支架衬垫的正畸器具的虚拟尺寸表示,以及定位成形成每个支架主体和支架垫的模具设备 。 该系统还包括一个数据处理计算机,它包括提供用于导出放电装置控制指令的计算机辅助制造程序产品,该控制指令包括支架中支架槽的虚拟尺寸表示,以及放电加工装置。 放电加工装置可以包括控制器,其包括控制程序产品,用于导出携带放电装置控制指令的控制信号和放电装置。

    Methods of forming a transistor having a recessed gate electrode structure
    10.
    发明授权
    Methods of forming a transistor having a recessed gate electrode structure 失效
    形成具有凹陷栅电极结构的晶体管的方法

    公开(公告)号:US06897114B2

    公开(公告)日:2005-05-24

    申请号:US10609719

    申请日:2003-06-30

    摘要: In manufacturing a recessed gate transistor, a channel implantation and a source/drain implantation are performed by means of a single implantation mask prior to the formation of a gate opening. Thereafter, the gate opening is formed to a depth that extends substantially to the channel implant so that raised drain and source regions are created which are substantially even with the gate electrode formed in the gate opening. Consequently, expensive and complex epitaxial growth steps can be avoided.

    摘要翻译: 在制造凹陷栅极晶体管时,在形成栅极开口之前通过单个注入掩模执行沟道注入和源极/漏极注入。 此后,栅极开口形成为基本上延伸到沟道注入的深度,使得产生凸起的漏极和源极区域,其基本上均匀地形成在栅极开口中的栅电极。 因此,可以避免昂贵且复杂的外延生长步骤。