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    Compression Ignition Internal Combustion Engine
    4.
    发明申请
    Compression Ignition Internal Combustion Engine 有权
    压缩点火内燃机

    公开(公告)号：US20080135014A1

    公开(公告)日：2008-06-12

    申请号：US10563334

    申请日：2004-06-25

    申请人： Matthias Blessing ,  Harald Braun ,  Frank Keller ,  Gerhard Konig ,  Christian Krueger ,  Alois Raab

    发明人： Matthias Blessing ,  Harald Braun ,  Frank Keller ,  Gerhard Konig ,  Christian Krueger ,  Alois Raab

    IPC分类号： F02B3/08

    CPC分类号： F02M61/1846 ,  F02D41/402 ,  F02D41/403 ,  F02D41/405 ,  F02M45/086 ,  F02M61/161 ,  F02M63/0225 ,  Y02T10/44

    摘要： A method for operating an internal combustion engine, injects fuel directly into a combustion chamber as a main injection, a postinjection and optionally also as a preinjection. An injection nozzle with a plurality of injection bores effects the preinjection and the postinjection preferably which is carried out cyclically. To minimize wetting of the combustion chamber walls, during the postinjection the partial quantities of fuel and a lift of the nozzle needle of the injection nozzle are set so that, for each partial quantity of the postinjection injected into the combustion chamber, the reach of the respective fuel jet in the combustion chamber is limited and the reach is less than the distance to a combustion chamber boundary.

    摘要翻译： 一种用于操作内燃机的方法，将燃料直接喷入作为主喷射的燃烧室，喷射后和任选地也可以作为预喷射。 具有多个注射孔的注射喷嘴优选地进行预注射和后注射，优选循环进行。 为了最小化燃烧室壁的湿润度，在后喷射期间，设定喷射喷嘴的喷嘴针的部分量的燃料和升程，使得对于喷射到燃烧室中的每个部分喷射喷射针的距离， 燃烧室内的燃料喷射受到限制，并且到达燃烧室边界的距离。

    SOI field effect transistor element having a recombination region and method of forming same
    5.
    发明申请
    SOI field effect transistor element having a recombination region and method of forming same 审中-公开
    具有复合区域的SOI场效应晶体管元件及其形成方法

    公开(公告)号：US20050037548A1

    公开(公告)日：2005-02-17

    申请号：US10949089

    申请日：2004-09-24

    申请人： Karsten Wieczorek ,  Manfred Horstmann ,  Christian Krueger

    发明人： Karsten Wieczorek ,  Manfred Horstmann ,  Christian Krueger

    IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/00

    CPC分类号： H01L29/78696 ,  H01L29/66772 ,  H01L29/78612 ,  H01L29/78684

    摘要： An SOI transistor element and a method of fabricating the same is disclosed, wherein a high concentration of stationary point defects is created by including a region within the active transistor area that has a slight lattice mismatch. In one particular embodiment, a silicon germanium layer is provided in the active area having a high concentration of point defects due to relaxing the strain of the silicon germanium layer upon heat treating the transistor element. Due to the point defects, the recombination rate is significantly increased, thereby reducing the number of charged carriers stored in the active area.

    摘要翻译： 公开了SOI晶体管元件及其制造方法，其中通过在有源晶体管区域内包含具有轻微晶格失配的区域来产生高浓度的固定点缺陷。 在一个特定实施例中，由于在对晶体管元件进行热处理时放松硅锗层的应变，在有源区域中提供了具有高浓度点缺陷的硅锗层。 由于点缺陷，复合率显着增加，从而减少存储在有源区域中的带电载流子数量。

    Agrochemical compositions
    6.
    发明授权
    Agrochemical compositions 失效
    农药组合物

    公开(公告)号：US06380135B1

    公开(公告)日：2002-04-30

    申请号：US09254217

    申请日：1999-03-03

    申请人： Karl Reuter ,  Christian Krueger

    发明人： Karl Reuter ,  Christian Krueger

    IPC分类号： A01N2514

    CPC分类号： A01N25/14 ,  Y10S514/944 ,  Y10S514/951 ,  Y10S514/952

    摘要： Agrochemical granulated material which is dispersible in water and contains a mixture that is liquid, gel-like, or waxy at +25° C., comprising at least one agrochemical active ingredient and at least one surface-active compound and a thickening agent, and optionally having an outer coating, characterized in that the granulated material has plastic behavior at +25° C.

    摘要翻译： 可分散在水中并含有液体，凝胶状或+ 25℃蜡状物的混合物的农业化学造粒材料，包含至少一种农药活性成分和至少一种表面活性化合物和增稠剂，以及 任选地具有外涂层，其特征在于，粒状材料在+ 25℃下具有塑性行为

    AQUEOUS BINDERS GRANULATED AND/OR FIBROUS SUBSTRATES
    8.
    发明申请
    AQUEOUS BINDERS GRANULATED AND/OR FIBROUS SUBSTRATES 有权
    颗粒状颗粒和/或纤维基质

    公开(公告)号：US20110172347A1

    公开(公告)日：2011-07-14

    申请号：US13119090

    申请日：2009-09-15

    申请人： Markus Braun ,  Christian Krueger

    发明人： Markus Braun ,  Christian Krueger

    IPC分类号： C08L37/00 ,  B27N5/00 ,  B27N7/00

    CPC分类号： C08L33/02 ,  C08L2205/02 ,  C08L2666/04

    摘要： Aqueous binders for granular and/or fibrous substrates comprising as active constituents a) at least one polymer which is obtainable by free-radical addition polymerization and comprises in copolymerized form ≧5.5% and ≦20% by weight of an α,β-ethylenically unsaturated monocarboxylic or dicarboxylic acid [polymer A], b) at least one polymer which is obtainable by free-radical addition polymerization and comprises in copolymerized form ≧40% by weight of an α,β-ethylenically unsaturated monocarboxylic or dicarboxylic acid [polymer B], and c) at least one polyol compound having at least two hydroxyl groups [polyol C].

    摘要翻译： 用于包含作为活性成分的颗粒和/或纤维底物的水性粘合剂a）至少一种可通过自由基加成聚合获得的聚合物，并且以共聚形式包含≥5.5％和≤100; 20重量％的α， 烯键式不饱和单羧酸或二羧酸[聚合物A]，b）至少一种可通过自由基加成聚合获得的聚合物，并且包含共聚形式≥40重量％的α，b-烯属不饱和单羧酸或二羧酸[ 聚合物B]和c）至少一种具有至少两个羟基的多元醇化合物[多元醇C]。

    TECHNIQUE FOR REMOVING RESIST MATERIAL AFTER HIGH DOSE IMPLANTATION IN A SEMICONDUCTOR DEVICE
    10.
    发明申请
    TECHNIQUE FOR REMOVING RESIST MATERIAL AFTER HIGH DOSE IMPLANTATION IN A SEMICONDUCTOR DEVICE 有权
    在半导体器件中高剂量植入后去除耐蚀材料的技术

    公开(公告)号：US20080160729A1

    公开(公告)日：2008-07-03

    申请号：US11782922

    申请日：2007-07-25

    申请人： Christian Krueger ,  Volker Grimm ,  Lutz Eckart

    发明人： Christian Krueger ,  Volker Grimm ,  Lutz Eckart

    IPC分类号： H01L21/426 ,  H01L21/302

    CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/266 ,  H01L21/31133 ,  Y02P80/30

    摘要： Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimize substrate material loss and thus dopant loss in sophisticated semiconductor devices. The first plasma-based etch step may provide under-etched areas of the resist mask, which may then be efficiently removed on the basis of the wet chemical etch process.

    摘要翻译： 可以基于等离子体蚀刻工艺和湿化学蚀刻配方的组合来有效地去除暴露于高剂量注入工艺的抗蚀剂掩模，其中两个蚀刻步骤可以包括高选择性蚀刻化学物质以使衬底材料最小化 复杂半导体器件中的损耗以及因此的掺杂剂损失。 第一等离子体蚀刻步骤可以提供抗蚀剂掩模的欠蚀刻区域，然后可以在湿化学蚀刻工艺的基础上有效地除去。