公开(公告)号：US10029154B2

公开(公告)日：2018-07-24

申请号：US14007389

申请日：2012-02-29

申请人： Chun-Nan Lin

发明人： Chun-Nan Lin

IPC分类号： A63B45/00 ,  A63B41/10 ,  A63B41/02

摘要： A two-layer leak-proof ball comprises a sheath layer (1), an intermediate body layer (2), a winding yarn layer (3), an inner body layer (4) and a two-layer protective layer (5). The intermediate body layer (2), the winding yarn layer (3), the inner body layer (4) and the two-layer protective layer (5) are tightly set successively at the inside of the sheath layer (1). Also disclosed is the manufacturing method of the two-layer protective layer (5) of the two-layer leak-proof ball. High air-sealed bromide butyl mucilage is injected at the inside of the inner body layer (4), and vulcanized at low temperature, thus a glue film is formed at the inner wall of the inner body layer (4). The inner bag of the two-layer leak-proof ball has high tightness and long service life.

公开(公告)号：US20140087900A1

公开(公告)日：2014-03-27

申请号：US14007389

申请日：2012-02-29

申请人： Chun-Nan Lin

发明人： Chun-Nan Lin

IPC分类号： A63B41/10

CPC分类号： A63B41/10 ,  A63B41/02 ,  A63B45/00 ,  A63B2209/00

摘要： A two-layer leak-proof ball comprises a sheath layer (1), an intermediate body layer (2), a winding yarn layer (3), an inner body layer (4) and a two-layer protective layer (5). The intermediate body layer (2), the winding yarn layer (3), the inner body layer (4) and the two-layer protective layer (5) are tightly set successively at the inside of the sheath layer (1). Also disclosed is the manufacturing method of the two-layer protective layer (5) of the two-layer leak-proof ball. High air-sealed bromide butyl mucilage is injected at the inside of the inner body layer (4), and vulcanized at low temperature, thus a glue film is formed at the inner wall of the inner body layer (4). The inner bag of the two-layer leak-proof ball has high tightness and long service life.

摘要翻译： 双层防漏球包括皮层（1），中间体层（2），卷绕纱层（3），内体层（4）和双层保护层（5）。 中间体层（2），卷绕纱层（3），内体层（4）和双层保护层（5）在皮层（1）的内侧依次紧密地设定。 还公开了双层防漏球的双层保护层（5）的制造方法。 在内体层（4）的内侧注入高密闭的溴化丁基胶浆，在低温下硫化，在内层（4）的内壁形成胶膜。 双层防漏球内袋密封性好，使用寿命长。

公开(公告)号：US20140044326A1

公开(公告)日：2014-02-13

申请号：US13584262

申请日：2012-08-13

申请人： Chun Nan LIN ,  Chung Ping Chuang ,  Che Liang Tsai

发明人： Chun Nan LIN ,  Chung Ping Chuang ,  Che Liang Tsai

IPC分类号： G06K9/00

CPC分类号： G06T5/008 ,  G06K9/3233 ,  G06T2207/30041

摘要： An image-recognition assisting method includes the steps of using an examination instrument to generate an image having a split-image area formed thereon; setting a region-of-interest (ROI) around the split-image area of the generated image; performing a pixel luminance addition processing on the ROI, so that all pixels in the ROI have increased luminance contrast; and performing a contrast correction on the ROI having increased luminance contrast, so that the luminance contrast between the split-image area and the area surrounding the split-image area in the ROI is further increased. The image-recognition assisting method optimizes the image generated by the conventional ophthalmic examination instrument, such as a fundus camera, to increase the sharpness and the luminance contrast of the image output by the fundus camera, so that an examiner can easily recognize two offset rectangular image parts in the split-image area and align them with each other to focus the examination instrument.

摘要翻译： 图像识别辅助方法包括以下步骤：使用检查仪器生成其上形成有分割图像区域的图像; 在生成的图像的分割图像区域周围设置感兴趣区域（ROI）; 对ROI进行像素亮度附加处理，使得ROI中的所有像素具有增加的亮度对比度; 并且对具有增加的亮度对比度的ROI执行对比度校正，使得分割图像区域和ROI中的分割图像区域周围的区域之间的亮度对比度进一步增加。 图像识别辅助方法优化诸如眼底照相机的常规眼科检查仪产生的图像，以增加由眼底照相机输出的图像的清晰度和亮度对比度，使得检查者可以容易地识别两个偏移矩形 在分割图像区域中的图像部分并将它们彼此对准以对准检查仪器。

公开(公告)号：US08212256B2

公开(公告)日：2012-07-03

申请号：US12060873

申请日：2008-04-02

申请人： Po-Lin Chen ,  Chun-Nan Lin ,  Shu-Feng Wu ,  Wen-Ching Tsai

发明人： Po-Lin Chen ,  Chun-Nan Lin ,  Shu-Feng Wu ,  Wen-Ching Tsai

IPC分类号： H01L29/04

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L27/1255

摘要： A pixel structure disposed on a substrate including a thin film transistor (TFT), a bottom capacitor electrode, a dielectric layer, an upper capacitor electrode, a passivation layer, and a pixel electrode is provided. The TFT having a source/drain and the bottom capacitor electrode are disposed on the substrate. The dielectric layer is disposed on the bottom capacitor electrode. The upper capacitor electrode has a semiconductor layer, a barrier layer, and a metal layer. The semiconductor layer is disposed on the dielectric layer above the bottom capacitor electrode. The barrier layer is disposed on the semiconductor layer. The metal layer whose material includes copper, a copper alloy, or a combination thereof is disposed on the barrier layer. The passivation layer covers the TFT and the upper capacitor electrode and has a first opening exposing the source/drain. The pixel electrode is electrically connected to the TFT through the first opening.

摘要翻译： 提供了一种设置在包括薄膜晶体管（TFT），底部电容器电极，电介质层，上部电容器电极，钝化层和像素电极的基板上的像素结构。 具有源极/漏极和底部电容器电极的TFT设置在衬底上。 电介质层设置在底部电容器电极上。 上部电容器电极具有半导体层，阻挡层和金属层。 半导体层设置在底部电容器电极上方的电介质层上。 阻挡层设置在半导体层上。 其材料包括铜，铜合金或其组合的金属层设置在阻挡层上。 钝化层覆盖TFT和上电容器电极，并且具有暴露源极/漏极的第一开口。 像素电极通过第一开口与TFT电连接。

公开(公告)号：US07902670B2

公开(公告)日：2011-03-08

申请号：US11738718

申请日：2007-04-23

申请人： Chun-Nan Lin ,  Kuo-Yuan Tu ,  Shu-Feng Wu ,  Wen-Ching Tsai

发明人： Chun-Nan Lin ,  Kuo-Yuan Tu ,  Shu-Feng Wu ,  Wen-Ching Tsai

IPC分类号： H01L23/48

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/66765

摘要： A display panel structure having a circuit element disposed thereon and method of manufacture are provided. The display panel includes a substrate and the circuit element disposed on the substrate. The circuit element has a first interface layer and a first conductive layer. Both the first interface layer and the first conductive layer have copper materials. The material which makes the first interface layer includes a reactant or a compound of the material which makes the first conductive layer. The method for manufacturing includes the following steps: forming a first interface layer on the substrate; forming a first conductive layer on the first interface layer; and etching the first conductive and interface layers to form a pattern. The existence of the first interface reduces the penetration of the first conductive layer on the substrate and improves the adhesive force between the first conductive layer and the substrate.

摘要翻译： 提供一种其上设置有电路元件的显示面板结构及其制造方法。 显示面板包括基板和设置在基板上的电路元件。 电路元件具有第一界面层和第一导电层。 第一界面层和第一导电层都具有铜材料。 制造第一界面层的材料包括制成第一导电层的反应物或材料的化合物。 制造方法包括以下步骤：在基板上形成第一界面层; 在所述第一界面层上形成第一导电层; 并蚀刻第一导电层和界面层以形成图案。 第一界面的存在减少了第一导电层在衬底上的穿透，并改善了第一导电层和衬底之间的粘合力。

公开(公告)号：US07875885B2

公开(公告)日：2011-01-25

申请号：US12582964

申请日：2009-10-21

申请人： Po-Lin Chen ,  Wen-Ching Tsai ,  Chun-Nan Lin ,  Kuo-Yuan Tu

发明人： Po-Lin Chen ,  Wen-Ching Tsai ,  Chun-Nan Lin ,  Kuo-Yuan Tu

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/458 ,  H01L27/124 ,  H01L29/41733

摘要： A display element and a method of manufacturing the same are provided. The method comprises the following steps: forming a first patterned conducting layer with a gate on a substrate and a dielectric layer thereon; forming a patterned semiconductor layer on the dielectric layer, wherein the patterned semiconductor layer has a channel region, a source and a drain, and wherein the source and the drain lie on the opposite sides of the channel region; selectively depositing a barrier layer, which only wraps the patterned semiconductor layer; forming a second patterned conducting layer on the barrier layer and above the source and the drain. In the display element manufactured by the method, the barrier layer only wraps the patterned semiconductor layer.

摘要翻译： 提供了一种显示元件及其制造方法。 该方法包括以下步骤：在衬底上形成具有栅极的第一图案化导电层和其上的电介质层; 在所述电介质层上形成图案化的半导体层，其中所述图案化半导体层具有沟道区，源极和漏极，并且其中所述源极和漏极位于所述沟道区的相对侧上; 选择性地沉积仅包裹图案化半导体层的阻挡层; 在阻挡层上和源极和漏极之上形成第二图案化导电层。 在通过该方法制造的显示元件中，阻挡层仅包裹图案化的半导体层。

公开(公告)号：US20090101903A1

公开(公告)日：2009-04-23

申请号：US12221615

申请日：2008-08-05

申请人： Po-Lin Chen ,  Kuo-Yuan Tu ,  Wen-Ching Tsai ,  Chun-Nan Lin ,  Shu-Feng Wu

发明人： Po-Lin Chen ,  Kuo-Yuan Tu ,  Wen-Ching Tsai ,  Chun-Nan Lin ,  Shu-Feng Wu

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/458 ,  H01L27/124

摘要： A thin-film transistor (TFT) includes a gate electrode, a gate dielectric layer, a semiconductor layer, source/drain electrodes, a passivation layer and a protection layer. The gate electrode is disposed on a substrate. The gate dielectric layer covers the gate electrode and the substrate. The semiconductor layer is disposed on the gate dielectric layer and above the gate electrode. The semiconductor layer has a channel region disposed above the gate electrode and source/drain regions disposed at both sides of the channel region. The source/drain electrodes are disposed on the source/drain regions of the semiconductor layer and each has a barrier layer disposed on the source/drain regions of the semiconductor layer and a conductive layer disposed on the barrier layer. The passivation layer is disposed over the surface of the source/drain electrodes. The protection layer is disposed over the substrate, the passivation layer, and the channel region of the semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括栅电极，栅极电介质层，半导体层，源极/漏极，钝化层和保护层。 栅电极设置在基板上。 栅介质层覆盖栅电极和衬底。 半导体层设置在栅极电介质层上并在栅电极上方。 半导体层具有设置在沟道区两侧的栅电极和源极/漏极区上方的沟道区。 源极/漏极设置在半导体层的源极/漏极区域上，并且每个具有设置在半导体层的源极/漏极区域上的势垒层和设置在阻挡层上的导电层。 钝化层设置在源/漏电极的表面上。 保护层设置在衬底，钝化层和半导体层的沟道区之上。

公开(公告)号：US20090053438A1

公开(公告)日：2009-02-26

申请号：US11895379

申请日：2007-08-24

申请人： Chun-Nan Lin

发明人： Chun-Nan Lin

IPC分类号： B29D22/02

CPC分类号： B29D22/04 ,  A63B41/00 ,  B29L2009/00 ,  B32B37/12 ,  Y10T428/1348

摘要： An airtight ball has an inner bladder, a sealing layer, a wound layer, a rubber layer and an outer leather covering. The inner bladder is a hollow, resilient sphere and has an inner space and an outer surface. The sealing layer is applied to the outer surface of the inner bladder and has a rubber glue layer, a polyvinyl alcohol (PVOH) layer and a rubber balloon. The rubber glue layer fills in air bubbles or holes formed in the outer surface of the inner bladder. The a PVOH layer forms a thin, airtight membrane on the rubber glue layer, keeps air from leaking out of the inner space of the inner bladder and further maintains roundness and increases bouncing ability of the ball. The rubber balloon is a thin layer of rubber attached to the PVOH layer. The wound layer is wound around the rubber balloon that keeps the wound layer from cutting the PVOH and stabilizes the wound layer. The present invention not only prevents air leakage but also increases the ball's roundness and strength.

摘要翻译： 密封球具有内囊，密封层，伤口层，橡胶层和外皮层。 内囊是一个中空的弹性球体，并具有一个内部空间和一个外表面。 将密封层施加到内囊的外表面，并具有橡胶胶层，聚乙烯醇（PVOH）层和橡胶球。 橡胶胶层填充形成在内胆外表面的气泡或孔。 PVOH层在橡胶胶层上形成薄的气密膜，保持空气不会从内胆的内部空间泄漏出来，并进一步保持圆度并增加球的弹跳能力。 橡胶球是附着在PVOH层上的薄橡胶层。 缠绕层缠绕在橡胶球囊上，保持伤口层不会切割PVOH并使伤口层稳定。 本发明不仅防止了空气泄漏，还增加了球的圆度和强度。

公开(公告)号：US20080027141A1

公开(公告)日：2008-01-31

申请号：US11482200

申请日：2006-07-05

申请人： Chun-Nan Lin ,  Shen-Jeu Won ,  Chi-Hung Teng

发明人： Chun-Nan Lin ,  Shen-Jeu Won ,  Chi-Hung Teng

IPC分类号： A61K31/12 ,  C07C50/20

CPC分类号： C07C50/34 ,  C07C46/00

摘要： Disclosed herein are 1,3-dihydroxyl-9,10-anthraquinone and 3-[(3-amino)-propoxy]-9,10-anthraquinone derivatives, in particular 1,3-dihydroxy-4-prenyl-9,10-anthraquinone and 3-[3-(4-methylpiperazinyl)-propoxy]-9,10-anthraquinone, which are found to have inhibitory activities against several types of human tumor/cancer cells and thus can be used in the manufacture of pharmaceutical compositions for use in the treatment of tumors/cancers.

摘要翻译： 本文公开了1,3-二羟基-9,10-蒽醌和3 - [（3-氨基） - 丙氧基] -9,10-蒽醌衍生物，特别是1,3-二羟基-4-异戊基-9,10- 蒽醌和3- [3-（4-甲基哌嗪基） - 丙氧基] -9,10-蒽醌，其被发现对几种类型的人类肿瘤/癌细胞具有抑制活性，因此可用于制备药物组合物 用于治疗肿瘤/癌症。

公开(公告)号：US20070052003A1

公开(公告)日：2007-03-08

申请号：US11272685

申请日：2005-11-15

申请人： Chih-Ping Chung ,  Chun-Nan Lin ,  Chung-Yi Chen ,  Hung-Kwei Liao

发明人： Chih-Ping Chung ,  Chun-Nan Lin ,  Chung-Yi Chen ,  Hung-Kwei Liao

IPC分类号： H01L21/336

CPC分类号： H01L29/42324 ,  H01L29/40114

摘要： A method for producing a memory with high coupling ratio is provided. First, a shallow trench isolation is formed on a substrate to define an active area. Second, a spacer is formed at the sidewall of the shallow trench isolation. Third, the shallow trench isolation is etched such that the top of the spacer is higher than the surface of the shallow trench isolation. Fourth, a tunnel oxide is formed on the active area. Finally, a floating gate is formed on the tunnel oxide.

摘要翻译： 提供了一种制造具有高耦合比的存储器的方法。 首先，在衬底上形成浅沟槽隔离以限定有源区域。 第二，在浅沟槽隔离物的侧壁处形成间隔物。 第三，浅沟槽隔离被蚀刻，使得间隔物的顶部高于浅沟槽隔离的表面。 第四，在有源区上形成隧道氧化物。 最后，在隧道氧化物上形成浮栅。