公开(公告)号：US20120110279A1

公开(公告)日：2012-05-03

申请号：US12915867

申请日：2010-10-29

申请人： John Fredricksen ,  Chung-Yen Chang ,  Nagender Somavarapu

发明人： John Fredricksen ,  Chung-Yen Chang ,  Nagender Somavarapu

IPC分类号： G06F12/00

CPC分类号： G06F17/30079 ,  G06F3/0647

摘要： Method and system for migrating a virtual storage system from a source storage system having access to a source storage device to a destination storage system having access to a destination storage device is provided. A processor executable management application estimates a likelihood of success for a migration operation before the migration operation enters a cut-over duration during which client access to the source storage system and the destination storage system is restricted. The migration operation enters the cut-over duration if there is high likelihood of success for completing the migration during the cut-over duration or aborted, if there is a low likelihood of success for completing the migration during the cut-over duration.

摘要翻译： 提供了用于将虚拟存储系统从具有对源存储设备的访问的源存储系统迁移到具有访问目的地存储设备的目的地存储系统的方法和系统。 处理器可执行管理应用程序估计迁移操作成功的可能性，在迁移操作进入切换持续时间期间，客户端对源存储系统和目的地存储系统的访问受到限制。 如果在切割期间完成迁移的可能性很小，则在切割期间完成迁移的可能性很高，或者中止了迁移操作，则迁移操作将进入截止期。

公开(公告)号：US08812806B2

公开(公告)日：2014-08-19

申请号：US12915867

申请日：2010-10-29

申请人： John Fredricksen ,  Chung-Yen Chang ,  Nagender Somavarapu

发明人： John Fredricksen ,  Chung-Yen Chang ,  Nagender Somavarapu

IPC分类号： G06F12/02 ,  G06F17/30 ,  G06F3/06

CPC分类号： G06F17/30079 ,  G06F3/0647

摘要： Method and system for migrating a virtual storage system from a source storage system having access to a source storage device to a destination storage system having access to a destination storage device is provided. A processor executable management application estimates a likelihood of success for a migration operation before the migration operation enters a cut-over duration during which client access to the source storage system and the destination storage system is restricted. The migration operation enters the cut-over duration if there is high likelihood of success for completing the migration during the cut-over duration or aborted, if there is a low likelihood of success for completing the migration during the cut-over duration.

摘要翻译： 提供了用于将虚拟存储系统从具有对源存储设备的访问的源存储系统迁移到具有访问目的地存储设备的目的地存储系统的方法和系统。 处理器可执行管理应用程序估计迁移操作成功的可能性，在迁移操作进入切换持续时间期间，客户端对源存储系统和目的地存储系统的访问受到限制。 如果在切割期间完成迁移的可能性很小，则在切割期间完成迁移的可能性很高，或者中止了迁移操作，则迁移操作将进入截止期。

公开(公告)号：US5831376A

公开(公告)日：1998-11-03

申请号：US742760

申请日：1996-11-01

申请人： Wu-Chi Ho ,  Chii Ron Kuo ,  Bor Rong Jong ,  Tseng Wuu Wey ,  Chung Yen Chang

发明人： Wu-Chi Ho ,  Chii Ron Kuo ,  Bor Rong Jong ,  Tseng Wuu Wey ,  Chung Yen Chang

IPC分类号： F02P19/02

CPC分类号： F23Q7/10 ,  F02P23/00

摘要： An electro magnetic controlled platinum infrared filament ignitor has a screw nut, a top pin, an electro magnetic induction coil, a magnetic permeable bolt, a metal wrapped cylinder and a platinum filament. Heat produced by current flowing in the platinum filament actuates the ignitor. The magnetic force set up by the energized coil, and spring force drives the adjustable top pin to the position of the platinum filament. The ignitor is simple in construction with endurable long life and efficient for ignition in most gas turbines, reciprocating engines and gas burners.

摘要翻译： 电磁控制铂红外线灯点火器具有螺母，顶针，电磁感应线圈，磁性可渗透螺栓，金属缠绕圆筒和铂丝。 通过在铂丝中流动的电流产生的热量驱动点火器。 由励磁线圈设置的磁力，弹簧力可调节顶针到铂丝丝的位置。 点火器结构简单，寿命长，在大多数燃气轮机，往复式发动机和燃气燃烧器中都具有高效的点火功能。

公开(公告)号：US07259084B2

公开(公告)日：2007-08-21

申请号：US10699839

申请日：2003-11-04

申请人： Edward Y. Chang ,  Guangli Luo ,  Tsung Hsi Yang ,  Chung Yen Chang

发明人： Edward Y. Chang ,  Guangli Luo ,  Tsung Hsi Yang ,  Chung Yen Chang

IPC分类号： H01L21/28

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02546 ,  H01L33/0066

摘要： This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemical vapor deposition (MOCVD).The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaxial layer, such as Si0.1Ge0.9 in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si01.Ge0.9 due to the large mismatch between this layer and Si substrate.Furthermore, a subsequent 0.8 μm Si0.05Ge0.95 layer, and/or optionally a further 0.8 μm Si0.02Ge0.98 layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaxial layers.Finally, a GaAs epitaxial layer is grown on said Ge film by using MOCVD.

摘要翻译： 本发明提供了通过使用超高真空化学气相沉积（UHVCVD）在Si衬底上生长Ge外延层的方法，随后通过使用金属有机化学气相沉积在所述Ge外延层的表面的Ge膜上生长GaAs层 （MOCVD）。 该方法包括以下步骤：首先，在标准清洁程序中预清洁硅晶片，用HF溶液浸渍并预烘烤以除去其天然氧化物层。 然后，通过使用超高真空化学气相沉积法在所述Si衬底上生长厚度为0.8μm的高Ge组成外延层，例如Si 0.1 O 0.1 Ge 0.9 在某些条件下 因此，由于该层和Si衬底之间的大的失配，产生许多位错并且位于界面附近以及位于S01的一部分的低部分。 此外，随后的0.8μm的Si 0.05 Al 0.1 O 0.95层和/或任选的另外的0.8μm的Si 0.02 Co 0.98 < SUB>层，生长。 它们形成所述层的应变界面可以非常有效地弯曲和终止传播的向上错位。 因此，在所述外延层的表面上生长纯Ge的膜。 最后，通过使用MOCVD在所述Ge膜上生长GaAs外延层。