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    Unified Model for process variations in integrated circuits
    2.
    发明申请
    Unified Model for process variations in integrated circuits 有权
    集成电路中过程变化的统一模型

    公开(公告)号：US20080140363A1

    公开(公告)日：2008-06-12

    申请号：US11638303

    申请日：2006-12-12

    申请人： Chung-Kai Lin ,  Cheng Hsiao ,  Sally Liu

    发明人： Chung-Kai Lin ,  Cheng Hsiao ,  Sally Liu

    IPC分类号： G06F17/18 ,  G06F17/50

    CPC分类号： G01R31/318357 ,  G01R31/3008 ,  G01R31/318314

    摘要： A method of developing a statistical model for integrated circuits includes providing a set of test patterns; collecting a set of intra-die data from the set of test patterns; collecting a set of inter-die data from the set of test patterns; generating a total variation sigma (sigma_total) from the set of intra-die data and the set of inter-die data; appointing one of a global variation sigma (sigma_global) and a local variation sigma (sigma_local) as a first sigma, and a remaining one as a second sigma; generating the first sigma from one of the set of intra-data and the set of inter-data; generating the second sigma by removing the first sigma from the sigma_total; generating a corner model for global variations based on sigma_global and the set of inter-die data; and generating a corner model for local variations based on sigma_local and the set of intra-die data.

    摘要翻译： 开发用于集成电路的统计模型的方法包括提供一组测试图案; 从所述一组测试图案中收集一组模内数据; 从所述一组测试图案中收集一组晶片间数据; 从所述管芯内数据集合和所述管芯间数据集合产生总变化Σ（sigma_total）; 任命一个全球变异西格玛（sigma_global）和一个局部变异西格玛（sigma_local）作为第一个西格玛，剩下的一个作为第二西格玛; 从所述一组内部数据和所述一组数据中的一个生成所述第一西格玛; 通过从sigma_total去除第一个sigma来产生第二个sigma; 生成基于sigma_global和集合的管芯间数据的全局变化的角模型; 并且基于sigma_local和一组模内数据生成用于局部变化的角模型。

    Unified model for process variations in integrated circuits
    4.
    发明授权
    Unified model for process variations in integrated circuits 有权
    集成电路中过程变化的统一模型

    公开(公告)号：US08275584B2

    公开(公告)日：2012-09-25

    申请号：US11638303

    申请日：2006-12-12

    申请人： Chung-Kai Lin ,  Cheng Hsiao ,  Sally Liu

    发明人： Chung-Kai Lin ,  Cheng Hsiao ,  Sally Liu

    IPC分类号： G06F7/60 ,  G06F17/18 ,  G06F17/50 ,  G01N37/00 ,  G01R31/14

    CPC分类号： G01R31/318357 ,  G01R31/3008 ,  G01R31/318314

    摘要： A method of developing a statistical model for integrated circuits includes providing a set of test patterns; collecting a set of intra-die data from the set of test patterns; collecting a set of inter-die data from the set of test patterns; generating a total variation sigma (sigma_total) from the set of intra-die data and the set of inter-die data; appointing one of a global variation sigma (sigma_global) and a local variation sigma (sigma_local) as a first sigma, and a remaining one as a second sigma; generating the first sigma from one of the set of intra-data and the set of inter-data; generating the second sigma by removing the first sigma from the sigma_total; generating a corner model for global variations based on sigma_global and the set of inter-die data; and generating a corner model for local variations based on sigma_local and the set of intra-die data.

    摘要翻译： 开发用于集成电路的统计模型的方法包括提供一组测试图案; 从所述一组测试图案中收集一组模内数据; 从所述一组测试图案中收集一组晶片间数据; 从所述管芯内数据集合和所述管芯间数据集合产生总变化Σ（sigma_total）; 任命一个全球变异西格玛（sigma_global）和一个局部变异西格玛（sigma_local）作为第一个西格玛，剩下的一个作为第二西格玛; 从所述一组内部数据和所述一组数据中的一个生成所述第一西格玛; 通过从sigma_total去除第一个sigma来产生第二个sigma; 生成基于sigma_global和集合的管芯间数据的全局变化的角模型; 并且基于sigma_local和一组模内数据生成用于局部变化的角模型。

    Characterization methodology for the thin gate oxide device
    7.
    发明授权
    Characterization methodology for the thin gate oxide device 有权
    薄栅氧化器件的表征方法

    公开(公告)号：US06800496B1

    公开(公告)日：2004-10-05

    申请号：US10644322

    申请日：2003-08-20

    申请人： Chung-Shi Chiang ,  Ke-Wei Su ,  Chung-Kai Lin ,  Jaw-Kang Her ,  Yu-Tai Chia

    发明人： Chung-Shi Chiang ,  Ke-Wei Su ,  Chung-Kai Lin ,  Jaw-Kang Her ,  Yu-Tai Chia

    IPC分类号： G01R3126

    CPC分类号： G01R31/2621 ,  G01R31/27 ,  G01R31/2831

    摘要： A method of characterizing gate leakage current in the fabrication of integrated circuits is described. A MOSFET model is provided including a gate electrode deposed over a gate oxide layer on a substrate and source and drain regions associated with the gate electrode. Device current is measured at four terminals simultaneously wherein one of the terminals is a drain terminal. The other terminals are the source, gate, and substrate. The portion of the device current measured at the drain terminal that is contributed by gate current is evaluated. The evaluated gate current contribution is subtracted from the drain terminal current measurement to obtain pure drain current. Fitting procedures are performed to obtain curves for the device currents. The pure drain current is used to extract mobility model parameters.

    摘要翻译： 描述了在集成电路的制造中表征栅极漏电流的方法。 提供了一种MOSFET模型，其包括位于衬底上的栅极氧化物层上的栅电极以及与栅电极相关联的源区和漏区。 在四个端子同时测量器件电流，其中一个端子是漏极端子。 其他端子是源极，栅极和衬底。 评估在漏极端子处测量的由栅极电流贡献的器件电流部分。 从漏极端子电流测量中减去所评估的栅极电流贡献，以获得纯漏极电流。 执行拟合程序以获得器件电流的曲线。 纯漏电流用于提取移动模型参数。

    TOUCH-SENSING PANEL AND TOUCH-SENSING DISPLAY APPARATUS
    8.
    发明申请
    TOUCH-SENSING PANEL AND TOUCH-SENSING DISPLAY APPARATUS 审中-公开
    触摸感应面板和触摸感应显示设备

    公开(公告)号：US20130194213A1

    公开(公告)日：2013-08-01

    申请号：US13746309

    申请日：2013-01-22

    申请人： Jen-Yen Chou ,  Cheng-Yen Yeh ,  Jiann-Liang Chou ,  Chung-Kai Lin ,  Chih-Jung Teng ,  Chen-Hao Su

    发明人： Jen-Yen Chou ,  Cheng-Yen Yeh ,  Jiann-Liang Chou ,  Chung-Kai Lin ,  Chih-Jung Teng ,  Chen-Hao Su

    IPC分类号： G06F3/041

    CPC分类号： G06F3/041 ,  G06F3/044

    摘要： A touch-sensing panel including a substrate, a plurality of first electrode series, a plurality of second electrode series, and a plurality of first floating patterns is provided. Each of the first electrode series includes a plurality of first touch-sensing pads and a plurality of first bridge patterns. The second electrode series are disposed on the substrate and electrically insulated from each other. The second sensing series are intersected with and electrically insulated from the first sensing series. Each of the second electrode series includes a plurality of second touch-sensing pads and a plurality of second bridge patterns. The first floating patterns are disposed between the first sensing series and the second sensing series. Each of the first touch-sensing pads includes at least one extending portion. In addition, there is no first floating pattern located between the extending portion and the second electrode series adjacent thereto.

    摘要翻译： 提供了包括基板，多个第一电极序列，多个第二电极序列和多个第一浮动图案的触摸感测面板。 第一电极系列中的每一个包括多个第一触摸感测垫和多个第一桥模式。 第二电极系列设置在基板上并彼此电绝缘。 第二感测系列与第一感测系列相交和电绝缘。 每个第二电极系列包括多个第二触摸感测焊盘和多个第二桥模式。 第一浮动图案设置在第一感测系列和第二感测系列之间。 每个第一触摸感测垫包括至少一个延伸部分。 此外，在与其相邻的延伸部分和第二电极序列之间不存在第一浮动图案。

    Accelerated Generation of Circuit Parameter Distribution Using Monte Carlo Simulation
    9.
    发明申请
    Accelerated Generation of Circuit Parameter Distribution Using Monte Carlo Simulation 审中-公开
    使用蒙特卡罗模拟加速生成电路参数分布

    公开(公告)号：US20120278050A1

    公开(公告)日：2012-11-01

    申请号：US13097569

    申请日：2011-04-29

    申请人： Cheng Hsiao ,  Ke-Wei Su ,  Chung-Kai Lin ,  Min-Chie Jeng

    发明人： Cheng Hsiao ,  Ke-Wei Su ,  Chung-Kai Lin ,  Min-Chie Jeng

    IPC分类号： G06G7/62 ,  G06F17/10

    CPC分类号： G06F17/5036

    摘要： A method includes providing an integrated circuit device comprising a plurality of input parameters and an electrical parameter. A simulation is performed using a simulation model to simulate a plurality of data of the electrical parameter, wherein the plurality of data are generated through simulation from a first plurality of input parameter sets reflecting values of the plurality of input parameters, and wherein the plurality of data is distributed in a range. A first sub-range among the range is selected. All of the plurality of data falling into the first sub-range are selected, and are fitted with corresponding ones of the first input parameter sets to generate a first function, wherein the electrical parameter is expressed as the first function of the plurality of input parameters. The first function is different from functions in the simulation model.

    摘要翻译： 一种方法包括提供包括多个输入参数和电参数的集成电路装置。 使用仿真模型进行模拟以模拟电参数的多个数据，其中通过反映多个输入参数的值的第一多个输入参数集的仿真来生成多个数据，并且其中， 数据分布在一个范围内。 选择范围内的第一个子范围。 选择落入第一子范围的多个数据中的所有数据，并且与第一输入参数组中的相应的数据进行拟合以产生第一函数，其中，电参数表示为多个输入参数的第一函数 。 第一个功能与仿真模型中的功能不同。