公开(公告)号：US06204191B1

公开(公告)日：2001-03-20

申请号：US09333932

申请日：1999-06-16

Applicant: Kwang-Jin Jung ,  Tae-ryong Kim ,  Chung-howan Kim ,  Jae-hee Hwang

Inventor： Kwang-Jin Jung ,  Tae-ryong Kim ,  Chung-howan Kim ,  Jae-hee Hwang

IPC: H01L21302

CPC classification number: H01L28/84 ,  H01L21/32137 ,  H01L21/76885 ,  H01L27/10814 ,  H01L28/92 ,  Y10S438/964

Abstract: A method of manufacturing semiconductor device that improves the alignment margin between a contact hole and a device pattern includes a layer having an upper vertically shaped portion and a lower symmetrically inclined shaped portion. That is, the lower portion is tapered.

Abstract translation: 制造改善接触孔和器件图案之间的对准边缘的半导体器件的方法包括具有上垂直形状部分和下对称倾斜成形部分的层。 也就是说，下部是锥形的。

公开(公告)号：US6124216A

公开(公告)日：2000-09-26

申请号：US393185

申请日：1999-09-10

Applicant: Ho Ko ,  Tae-Ryong Kim ,  Chung-Howan Kim ,  Dong-Yun Kim ,  Jong-Heui Song

Inventor： Ho Ko ,  Tae-Ryong Kim ,  Chung-Howan Kim ,  Dong-Yun Kim ,  Jong-Heui Song

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/768 ,  H01L23/48 ,  H01L29/52

CPC classification number: H01L21/02164 ,  H01L21/02134 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3124 ,  H01L21/76801

Abstract: A method of forming a low-k dielectric insulating layer includes forming the dielectric insulating layer and then removing hydrogen bonds in the dielectric insulating layer. The dielectric layer as formed is preferably a HSQ film which contains the structure Si--O--H. Hydrogen is removed from the dielectric layer by either: a heat treatment in plasma, an ozone reduction process, an ion implantation process, or electron beam bombardment.

Abstract translation: 形成低k电介质绝缘层的方法包括形成介电绝缘层，然后除去介电绝缘层中的氢键。 所形成的电介质层优选为含有Si-O-H结构的HSQ膜。 通过等离子体中的热处理，臭氧还原处理，离子注入工艺或电子束轰击，从电介质层除去氢。