公开(公告)号：US08143703B2

公开(公告)日：2012-03-27

申请号：US12291101

申请日：2008-11-05

申请人： David L. Heald ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Wallace Parce

发明人： David L. Heald ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Wallace Parce

IPC分类号： H01L29/06

CPC分类号： G03F7/0757 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/00 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/28273 ,  H01L21/3124 ,  Y10S977/755 ,  Y10S977/845 ,  Y10S977/855 ,  Y10S977/936 ,  Y10S977/938

摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂进行图案化和/或使用便于阵列形成的装置。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。

公开(公告)号：US07867331B2

公开(公告)日：2011-01-11

申请号：US10567420

申请日：2004-08-04

申请人： Joseph Kennedy ,  Jason Stuck

发明人： Joseph Kennedy ,  Jason Stuck

IPC分类号： C04B41/50

CPC分类号： H01L21/3122 ,  C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76808

摘要： A sacrificial coating material includes: at least one inorganic compound, and at least one material modification agent, wherein the sacrificial coating material is dissolvable in an alkaline-based chemistry or a fluorine-based chemistry. A method of producing a sacrificial coating material includes: providing at least one inorganic compound, providing at least one material modification agent, combining the at least one inorganic compound with the at least one material modification agent to form the sacrificial coating material, wherein the sacrificial coating material is dissolvable in an alkaline-based chemistry or a fluorine-based chemistry, but not organic casting solvents commonly used in organic BARC materials.

摘要翻译： 牺牲涂层材料包括：至少一种无机化合物和至少一种材料改性剂，其中牺牲涂层材料可溶于碱性化学或氟基化学。 制造牺牲涂料的方法包括：提供至少一种无机化合物，提供至少一种材料改性剂，将至少一种无机化合物与至少一种材料改性剂组合以形成牺牲涂料，其中牺牲 涂料可溶于碱性化学物质或氟基化学物质，但不溶于有机BARC材料中通常使用的有机浇铸溶剂。

公开(公告)号：US07833696B2

公开(公告)日：2010-11-16

申请号：US11666823

申请日：2005-09-29

申请人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

发明人： Peng-Fei Fu ,  Eric Scott Moyer ,  Craig Rollin Yeakle

IPC分类号： G03F7/075

CPC分类号： C23C18/1295 ,  C08G77/12 ,  C09D183/04 ,  C23C18/06 ,  C23C18/122 ,  G03F7/091 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/3124 ,  Y10T428/24463 ,  Y10T428/31663

摘要： Silsesquioxane resins useful in forming the antireflective coating having the formula (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p(RSiO(3-x)/2(OH)x)q where Ph is a phenyl group, Me is a methyl group, R is selected from ester groups and polyether groups, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, q has a value of 0.01 to 0.30 and m+n+p+q≈1.

摘要翻译： 可用于形成具有式（PhSiO（3-x）/ 2（OH）x）mHSiO（3-x）/ 2（OH）x）n（MeSiO（3-x）/ 2（OH））的抗反射涂层的倍半硅氧烷树脂 ）x）p（RSiO（3-x）/ 2（OH）x）q其中Ph是苯基，Me是甲基，R选自酯基和聚醚基团，x的值为0,1 或2; m的值为0.05〜0.95，n为0.05〜0.95，p为0.05〜0.95，q为0.01〜0.30，m + n + p +q≈1。

公开(公告)号：US07674721B2

公开(公告)日：2010-03-09

申请号：US11797293

申请日：2007-05-02

申请人： Tatsuya Usami

发明人： Tatsuya Usami

IPC分类号： H01L21/316

CPC分类号： H01L21/76897 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.

摘要翻译： 形成多层绝缘膜的方法包括使用第一进料气体形成第一绝缘层，第一绝缘层包括甲基硅倍半氧烷（MSQ），使用第二进料气体形成第二绝缘层，第二绝缘层包括 具有Si-H基团的聚硅氧烷化合物，使得第二绝缘层与第一绝缘层的顶部接触，以及形成包含无机材料的第三绝缘层，使得第三绝缘层与第一绝缘层的顶部接触 第二绝缘层。

公开(公告)号：US20090137108A1

公开(公告)日：2009-05-28

申请号：US12320053

申请日：2009-01-15

申请人： Tatsuya Usami

发明人： Tatsuya Usami

IPC分类号： H01L21/4763 ,  H01L21/47

CPC分类号： H01L21/76897 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.

摘要翻译： 形成多层绝缘膜的方法包括使用第一进料气体形成第一绝缘层，第一绝缘层包括甲基硅倍半氧烷（MSQ），使用第二进料气体形成第二绝缘层，第二绝缘层包括 具有Si-H基团的聚硅氧烷化合物，使得第二绝缘层与第一绝缘层的顶部接触，以及形成包含无机材料的第三绝缘层，使得第三绝缘层与第一绝缘层的顶部接触 第二绝缘层。

公开(公告)号：US07538007B2

公开(公告)日：2009-05-26

申请号：US11008908

申请日：2004-12-10

申请人： Sang-Tae Ahn ,  Dong-Sun Sheen ,  Seok-Pyo Song ,  Jong-Han Shin

发明人： Sang-Tae Ahn ,  Dong-Sun Sheen ,  Seok-Pyo Song ,  Jong-Han Shin

IPC分类号： H01L21/8242

CPC分类号： H01L21/02164 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31633 ,  H01L23/53295 ,  H01L27/10814 ,  H01L27/10894 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and a metal interconnection line formed on the insulation layer. The method includes the steps of: forming a capacitor on a predetermined portion of a substrate; forming an insulation layer by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and forming a metal interconnection line on the insulation layer.

摘要翻译： 公开了一种在电容器上形成有可流动绝缘层的半导体器件及其制造方法。 特别地，半导体器件包括：形成在基板的预定部分上的电容器; 通过在包含基板和电容器的所得到的基板结构上层叠可流动绝缘层和未掺杂的硅酸盐玻璃层而形成的绝缘层; 以及形成在所述绝缘层上的金属互连线。 该方法包括以下步骤：在基板的预定部分上形成电容器; 通过在包括所述基板和所述电容器的所得衬底结构上堆叠可流动绝缘层和未掺杂的硅酸盐玻璃层来形成绝缘层; 以及在所述绝缘层上形成金属互连线。

公开(公告)号：US20090117392A1

公开(公告)日：2009-05-07

申请号：US11915427

申请日：2006-05-26

申请人： Jonathan Gordon Conn Veinot ,  Colin Michael Hessel

发明人： Jonathan Gordon Conn Veinot ,  Colin Michael Hessel

IPC分类号： B32B9/04 ,  B05D3/02 ,  B44C1/22

CPC分类号： H01L21/316 ,  B82Y10/00 ,  C01B33/021 ,  H01L21/02134 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/2022 ,  H01L21/3124 ,  Y10T428/24421 ,  Y10T428/31663

摘要： Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.

摘要翻译： 描述了通过在还原热固化条件下处理氢倍半硅氧烷（HSQ）制备纳米晶体Si / SiO 2复合材料的方法。 还描述了通过酸蚀刻纳米晶体Si / SiO 2复合材料制备硅纳米颗粒的方法。

公开(公告)号：US07521098B2

公开(公告)日：2009-04-21

申请号：US10727038

申请日：2003-12-04

申请人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

发明人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

IPC分类号： H05B7/00 ,  B05D3/06 ,  C23C14/30

CPC分类号： H01L21/02137 ,  B05D1/005 ,  B05D3/068 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3124

摘要： A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or a film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.

摘要翻译： 根据本发明的加工方法涂覆极性液膜或在形成在基板上的有机膜的表面上形成无机膜作为保护膜。 该处理方法包括通过在稀有气体气氛中通过电子束照射装置用电子束照射有机膜来固化有机膜的修改步骤，以及将极性液体施加到改性表面的涂布步骤 有机膜或在有机膜上形成无机膜的成膜步骤。 固化有机薄膜，赋予极性液体或无机薄膜亲和性。

公开(公告)号：US07501315B2

公开(公告)日：2009-03-10

申请号：US11148001

申请日：2005-06-07

申请人： David L. Heald ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Wallace Parce

发明人： David L. Heald ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Wallace Parce

IPC分类号： H01L21/82 ,  H01L27/10

CPC分类号： G03F7/0757 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/00 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/28273 ,  H01L21/3124 ,  Y10S977/755 ,  Y10S977/845 ,  Y10S977/855 ,  Y10S977/936 ,  Y10S977/938

摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

公开(公告)号：US07425505B2

公开(公告)日：2008-09-16

申请号：US10894319

申请日：2004-07-19

申请人： Philip G. Clark ,  Kurt Karl Christenson ,  Brent D. Schwab

发明人： Philip G. Clark ,  Kurt Karl Christenson ,  Brent D. Schwab

IPC分类号： H01L21/44

CPC分类号： H01L21/31138 ,  H01L21/02063 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/76826 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i.e., by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.

摘要翻译： 本发明提供了在半导体加工中使用硅烷化剂的改进。 更具体地说，可以与基本上不可燃的醚组合提供该酯化剂，使得该组合基本上是不可燃的。 另外，可以以蒸气形式使用，也可以与电磁辐射结合使用。 这些实施方案中的每一个都可以增强水解剂的可用性，即通过使得silyating剂更安全，更容易地用于各种加工设备和/或通过提高所述silyating剂的钝化效率/效率。