公开(公告)号：US20180145150A1

公开(公告)日：2018-05-24

申请号：US15859340

申请日：2017-12-30

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Veeraraghavan S. Basker ,  Johnathan E. Faltermeier ,  Hemanth Jagannathan ,  Tenko Yamashita

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/66545 ,  H01L21/02134 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/28088 ,  H01L21/28114 ,  H01L21/28185 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32051 ,  H01L21/32055 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/32138 ,  H01L21/47573 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L2029/7858

摘要： A semiconductor structure includes a semiconductor substrate having an outer surface; a plurality of oxide regions, located outward of the outer surface, and defining a plurality of metal-gate-stack-receiving cavities; and a liner interspersed between the plurality of oxide regions and the semiconductor substrate and between the plurality of oxide regions and the plurality of metal-gate-stack-receiving cavities. A layer of high-K material is deposited over the semiconductor structure, including on outer surfaces of the plurality of oxide regions, outer edges of the liner, on walls of the plurality of metal-gate-stack-receiving cavities, and on the outer surface of the semiconductor substrate within the plurality of metal-gate-stack-receiving cavities. The layer of high-K material is chamfered to remove same from the outer surfaces of the plurality of oxide regions, the outer edges of the liner, and partially down the walls of the plurality of metal-gate-stack-receiving cavities.

公开(公告)号：US09859275B2

公开(公告)日：2018-01-02

申请号：US14605142

申请日：2015-01-26

申请人： International Business Machines Corporation

发明人： Dechao Guo ,  Zuoguang Liu ,  Tenko Yamashita ,  Chun-Chen Yeh

IPC分类号： H01L21/02 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/49 ,  H01L27/12 ,  H01L27/02 ,  H01L21/3213

CPC分类号： H01L27/0886 ,  H01L21/02134 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0207 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/4916

摘要： A semiconductor device is provided comprising a substrate, two or more semiconductor fins, and one or more gates. A flowable oxide layer is deposited on the semiconductor device. An area between the two or more semiconductor fins is etched such that the substrate is exposed. An insulating layer is deposited within the etched area. At least the flowable oxide layer is removed.

公开(公告)号：US09245792B2

公开(公告)日：2016-01-26

申请号：US12179991

申请日：2008-07-25

申请人： Neng-Kuo Chen ,  Kuo-Hwa Tzeng ,  Cheng-Yuan Tsai

发明人： Neng-Kuo Chen ,  Kuo-Hwa Tzeng ,  Cheng-Yuan Tsai

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/02 ,  H01L21/316

CPC分类号： H01L21/7681 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/76801

摘要： Methods of fabricating interconnect structures in a semiconductor integrated circuit (IC) are presented. A preferred embodiment comprises forming interconnect lines and vias through a dual-damascenes process. It includes forming a via dielectric layer, an etch stop layer directly over the via dielectric layer, and a trench dielectric layer over the etch stop layer. The etch stop layer is patterned through a first photolithography and etch process to form openings in the etch stop layer, prior to the formation of the trench dielectric layer. A second photolithography and etch process is performed after formation of the trench dielectric layer to create trench openings in the trench dielectric layer and via openings in the via dielectric layer, where the patterned etch stop layer acts as a hard-mask in forming vias in the via dielectric layer.

摘要翻译： 提出了在半导体集成电路（IC）中制造互连结构的方法。 优选实施例包括通过双重镶嵌工艺形成互连线和通孔。 它包括形成通孔电介质层，直接在通孔电介质层上的蚀刻停止层，以及在蚀刻停止层上的沟槽电介质层。 在形成沟槽电介质层之前，蚀刻停止层通过第一光刻和蚀刻工艺图案化以在蚀刻停止层中形成开口。 在形成沟槽电介质层之后进行第二光刻和蚀刻工艺，以在通孔电介质层中的沟槽电介质层和通孔中形成沟槽开口，其中图案化的蚀刻停止层在形成通孔的过程中用作硬掩模 通过电介质层。

公开(公告)号：US08486612B2

公开(公告)日：2013-07-16

申请号：US12951196

申请日：2010-11-22

申请人： Weimin Li ,  Gurtej S. Sandhu

发明人： Weimin Li ,  Gurtej S. Sandhu

IPC分类号： G03F7/20

CPC分类号： G03F7/095 ,  G03F7/0757 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/311 ,  Y10T428/31663

摘要： A cap material may be formed over a photopatternable material on a semiconductor substrate. The cap material absorbs or reflects radiation and protects the photopatternable material from a first wavelength of radiation used in patterning the photoresist layer. Upon exposure to a first wavelength of radiation, the photopatternable material may be converted into a silicon dioxide-based material. The silicon dioxide-based material may be selectively removed.

摘要翻译： 盖材料可以形成在半导体衬底上的可光图案化材料上。 盖材料吸收或反射辐射并保护光致图案材料免受用于图案化光刻胶层的第一波长辐射。 当暴露于第一波长的辐射时，可以将光图案化材料转化为基于二氧化硅的材料。 可以选择性地除去基于二氧化硅的材料。

公开(公告)号：US08034638B1

公开(公告)日：2011-10-11

申请号：US12437437

申请日：2009-05-07

申请人： Bart J. Schravendijk ,  Justin F. Gaynor

发明人： Bart J. Schravendijk ,  Justin F. Gaynor

IPC分类号： H01L21/00

CPC分类号： H01L21/31058 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826

摘要： The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.

摘要翻译： 本发明提供了修复IC制造中通常使用的工艺引起的对低k电介质膜的损伤的方法。 该方法可以集成到各个阶段的IC制造工艺流程中。 根据各种实施例，涉及在沉积低k膜的晶片上执行IC制造工艺的方法，并且随后用甲硅烷基化剂处理该膜以修复在该过程期间对膜的损坏。 可能在一个或多个破坏性处理步骤之后执行损伤修复。

公开(公告)号：US07674721B2

公开(公告)日：2010-03-09

申请号：US11797293

申请日：2007-05-02

申请人： Tatsuya Usami

发明人： Tatsuya Usami

IPC分类号： H01L21/316

CPC分类号： H01L21/76897 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.

摘要翻译： 形成多层绝缘膜的方法包括使用第一进料气体形成第一绝缘层，第一绝缘层包括甲基硅倍半氧烷（MSQ），使用第二进料气体形成第二绝缘层，第二绝缘层包括 具有Si-H基团的聚硅氧烷化合物，使得第二绝缘层与第一绝缘层的顶部接触，以及形成包含无机材料的第三绝缘层，使得第三绝缘层与第一绝缘层的顶部接触 第二绝缘层。

公开(公告)号：US07576009B2

公开(公告)日：2009-08-18

申请号：US11948224

申请日：2007-11-30

申请人： Ki Lyoung Lee ,  Cheol Kyu Bok ,  Keun Do Ban

发明人： Ki Lyoung Lee ,  Cheol Kyu Bok ,  Keun Do Ban

IPC分类号： H01L21/027

CPC分类号： H01L21/0337 ,  H01L21/02115 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3143 ,  H01L21/3146 ,  H01L21/31608 ,  H01L21/3185 ,  H01L21/32139

摘要： A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an underlying layer, side-etching the second mask pattern with the third mask pattern as an etching barrier mask, removing the third mask pattern, forming a spin-on-carbon layer that exposes the upper portion of the second mask pattern, performing an etching process to expose the underlying layer with the spin-on-carbon layer as an etching barrier mask, and removing the spin-on-carbon layer.

摘要翻译： 一种用于形成半导体器件的精细图案的方法包括在具有下层的半导体衬底上形成包括第一，第二和第三掩模图案的沉积图案，用第三掩模图案侧蚀刻第二掩模图案作为蚀刻阻挡层 掩模，去除第三掩模图案，形成曝光第二掩模图案的上部的自旋碳层，执行蚀刻工艺以使作为蚀刻阻挡掩模的自旋 - 碳层曝光下层， 并去除碳 - 碳层。

公开(公告)号：US07553769B2

公开(公告)日：2009-06-30

申请号：US10682196

申请日：2003-10-10

申请人： Dorel Ioan Toma ,  Jianhong Zhu ,  Kazuhiro Hamamoto

发明人： Dorel Ioan Toma ,  Jianhong Zhu ,  Kazuhiro Hamamoto

IPC分类号： H01L21/302

CPC分类号： H01L21/02337 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a CxHy containing material, wherein x and y are each integers greater than or equal to a value of unity. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

摘要翻译： 用于处理电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于含CxHy的材料，其中x和y各自为大于或等于一个值的整数。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。 作为蚀刻处理或灰化的结果，形成在电介质膜中的特征中的暴露表面可能被损坏或激活，导致污染物的保留，水分的吸收，介电常数的增加等。损坏的表面，例如这些 通过执行愈合这些表面中的至少一个来处理，例如恢复介电常数（即，降低介电常数）并清洁这些表面以去除污染物，水分或残留物。 此外，膜的特征的阻挡层和金属化的制备可以包括通过执行特征的侧壁表面的密封来封闭暴露的孔并提供用于阻挡膜沉积的表面来进行处理。

公开(公告)号：US07541200B1

公开(公告)日：2009-06-02

申请号：US11476426

申请日：2006-06-27

申请人： Bart J. van Schravendijk ,  Justin F. Gaynor

发明人： Bart J. van Schravendijk ,  Justin F. Gaynor

IPC分类号： H01L21/00

CPC分类号： H01L21/31058 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826

摘要： The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing an IC fabrication process on a wafer on which a low-k film is deposited, and subsequently treating the film with a silylating agent to repair the damage done to the film during the process. Damage repair may be performed after one or more of the damaging process steps.

摘要翻译： 本发明提供了修复IC制造中通常使用的工艺引起的对低k电介质膜的损伤的方法。 该方法可以集成到各个阶段的IC制造工艺流程中。 根据各种实施例，涉及在沉积低k膜的晶片上执行IC制造工艺的方法，并且随后用甲硅烷基化剂处理该膜以修复在该过程期间对膜的损坏。 可能在一个或多个破坏性处理步骤之后执行损伤修复。

公开(公告)号：US20090137108A1

公开(公告)日：2009-05-28

申请号：US12320053

申请日：2009-01-15

申请人： Tatsuya Usami

发明人： Tatsuya Usami

IPC分类号： H01L21/4763 ,  H01L21/47

CPC分类号： H01L21/76897 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.

摘要翻译： 形成多层绝缘膜的方法包括使用第一进料气体形成第一绝缘层，第一绝缘层包括甲基硅倍半氧烷（MSQ），使用第二进料气体形成第二绝缘层，第二绝缘层包括 具有Si-H基团的聚硅氧烷化合物，使得第二绝缘层与第一绝缘层的顶部接触，以及形成包含无机材料的第三绝缘层，使得第三绝缘层与第一绝缘层的顶部接触 第二绝缘层。