公开(公告)号：US08822314B2

公开(公告)日：2014-09-02

申请号：US13523670

申请日：2012-06-14

Applicant: Christopher L. Chua ,  Mark R. Teepe ,  Thomas Wunderer ,  Zhihong Yang ,  Noble M. Johnson ,  Clifford Knollenberg

Inventor： Christopher L. Chua ,  Mark R. Teepe ,  Thomas Wunderer ,  Zhihong Yang ,  Noble M. Johnson ,  Clifford Knollenberg

IPC: H01L21/20 ,  H01L21/322 ,  H01L21/02

CPC classification number: H01L21/02658 ,  C30B25/02 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02661

Abstract: An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface.

Abstract translation: 外延生长方法包括对本体结晶氮化铝（AlN）衬底的表面进行等离子体处理，随后在富含氨的环境中将衬底加热至高于1000℃的温度至少5分钟，而无需外延生长。 在表面加热后，在表面上外延生长III族氮化物层。

公开(公告)号：US20070139141A1

公开(公告)日：2007-06-21

申请号：US11312035

申请日：2005-12-20

Applicant: Clifford Knollenberg ,  Michael Kneissl ,  Noble Johnson

Inventor： Clifford Knollenberg ,  Michael Kneissl ,  Noble Johnson

IPC: H03H9/56

CPC classification number: H03H3/02 ,  H03H9/0542 ,  H03H9/173 ,  H03H9/587 ,  Y10T29/42

Abstract: Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region. In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.

Abstract translation: 提供一种形成基于声学的装置的方法，包括形成具有第一表面和第二表面的AlGaN区域。 第一电极沉积在AlGaN区域的第一表面上，然后第二电极沉积在AlGaN区域的第二表面上。 在本申请的另一方面，通过外延层过度生长工艺形成AlGaN区域。

公开(公告)号：US20080144688A1

公开(公告)日：2008-06-19

申请号：US11962861

申请日：2007-12-21

Applicant: Christopher L. Chua ,  Mark R. Teepe ,  Clifford Knollenberg ,  Zhihong Yang

Inventor： Christopher L. Chua ,  Mark R. Teepe ,  Clifford Knollenberg ,  Zhihong Yang

IPC: H01S5/026 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/18319 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/32341

Abstract: According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.

Abstract translation: 根据一个描述的实施例，发光器件结构包括设置在发光器件结构的有源区上的外延接触层，至少部分地设置在外延接触层上的多层反射器，以及邻接外延接触的导电接触 层，多层反射器包围导电触点。

公开(公告)号：US20140011345A1

公开(公告)日：2014-01-09

申请号：US13523670

申请日：2012-06-14

Applicant: Christopher L. Chua ,  Mark R. Teepe ,  Thomas Wunderer ,  Zhihong Yang ,  Noble M. Johnson ,  Clifford Knollenberg

Inventor： Christopher L. Chua ,  Mark R. Teepe ,  Thomas Wunderer ,  Zhihong Yang ,  Noble M. Johnson ,  Clifford Knollenberg

IPC: H01L21/02

CPC classification number: H01L21/02658 ,  C30B25/02 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02661

Abstract: An epitaxial growth method includes plasma treating a surface of a bulk crystalline Aluminum Nitride (AlN) substrate and subsequently heating the substrate in an ammonia-rich ambient to a temperature of above 1000° C. for at least 5 minutes without epitaxial growth. After heating the surface, a III-nitride layer is epitaxially grown on the surface.

Abstract translation: 外延生长方法包括对本体结晶氮化铝（AlN）衬底的表面进行等离子体处理，随后在富含氨的环境中将衬底加热至高于1000℃的温度至少5分钟，而无需外延生长。 在表面加热后，在表面上外延生长III族氮化物层。

公开(公告)号：US07812421B2

公开(公告)日：2010-10-12

申请号：US11962861

申请日：2007-12-21

Applicant: Christopher L. Chua ,  Mark R. Teepe ,  Clifford Knollenberg ,  Zhihong Yang

Inventor： Christopher L. Chua ,  Mark R. Teepe ,  Clifford Knollenberg ,  Zhihong Yang

IPC: H01L29/78

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/18319 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/32341

Abstract: According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.

Abstract translation: 根据一个描述的实施例，发光器件结构包括设置在发光器件结构的有源区上的外延接触层，至少部分地设置在外延接触层上的多层反射器，以及邻接外延接触的导电接触 层，多层反射器包围导电触点。