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    SAFE LASER DEVICE FOR OPTICAL SENSING APPLICATIONS
    2.
    发明申请
    SAFE LASER DEVICE FOR OPTICAL SENSING APPLICATIONS 审中-公开

    公开(公告)号：US20180076598A1

    公开(公告)日：2018-03-15

    申请号：US15563636

    申请日：2016-03-29

    申请人： KONINKLIJKE PHILIPS N.V.

    发明人： HOLGER MOENCH ,  ALEXANDER WEIGL ,  PHILIPP HENNING GERLACH

    IPC分类号： H01S5/42 ,  H01S5/068 ,  H01S5/022 ,  H01S5/183

    CPC分类号： H01S5/423 ,  H01S5/02248 ,  H01S5/0282 ,  H01S5/06825 ,  H01S5/18327 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18377 ,  H01S5/18391

    摘要： The invention describes a laser device (100) comprising between two and six mesas (120) provided on one semiconductor chip (110), wherein the mesas (120) are electrically connected in parallel. The laser device (100) is adapted such that degradation of at least one mesa (120) results in a decreased laser power emitted by the laser device (100) in a defined solid angle when driven at the defined electrical input power. The laser device (100) is adapted such that eye safety of the laser device (100) is guaranteed during life time of the laser device (100). Eye safety may be guaranteed by designing the semiconductor structure or more general layer structure of mesas (120) of the laser device (100) in a way that degradation of one or more layers of the layer structure results in a reduction of the maximum optical power emitted in a defined solid angle. Alternatively or in addition, the electrical input power supplied to the laser device (100) may be controlled and adapted depending on the emitted optical power such that safety limits are not exceeded. The invention further relates to a laser module and an optical sensor (300) comprising such a laser device (100) and mobile communication device (400) comprising such an optical sensor (300). The invention further relates to a method of manufacturing such a laser device (100).

    Tunable optical phase filter
    6.
    发明授权
    Tunable optical phase filter 有权

    公开(公告)号：US09716368B2

    公开(公告)日：2017-07-25

    申请号：US14956888

    申请日：2015-12-02

    申请人： SAE Magnetics (H.K.) Ltd.

    发明人： Babu Dayal Padullaparthi

    IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/343

    CPC分类号： H01S5/18386 ,  H01S5/18311 ,  H01S5/18391 ,  H01S5/34313 ,  H01S5/3434

    摘要： An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width.

    Light emitting element having multiple surface areas of a semiconductor layer and method of producing same
    7.
    发明授权
    Light emitting element having multiple surface areas of a semiconductor layer and method of producing same 有权
    具有半导体层的多个表面积的发光元件及其制造方法

    公开(公告)号：US09595810B2

    公开(公告)日：2017-03-14

    申请号：US14449888

    申请日：2014-08-01

    申请人： Sony Corporation

    发明人： Tatsushi Hamaguchi ,  Masaru Kuramoto ,  Noriyuki Futagawa

    IPC分类号： H01L21/00 ,  H01S5/183 ,  H01S5/042 ,  H01S5/187 ,  H01S5/343 ,  H01S5/02

    CPC分类号： H01S5/183 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/18388 ,  H01S5/18391 ,  H01S5/187 ,  H01S5/34333 ,  H01S2304/12

    摘要： Light emitting elements, and methods of producing the same, the light emitting elements including: a laminated structure, the laminated structure including a first compound semiconductor layer that includes a first surface and a second surface facing the first surface, an active layer that is in contact with the second surface of the first compound semiconductor layer, and a second compound semiconductor layer; where the first surface of the first compound semiconductor layer has a first surface area and a second surface area, the first and second surface areas being different in at least one of a height or a roughness, a first light reflection layer is formed on at least a portion of the first surface area, and a first electrode is formed on at least a portion of the second surface area.

    摘要翻译： 发光元件及其制造方法，所述发光元件包括：层叠结构，所述层叠结构体包括第一化合物半导体层，所述第一化合物半导体层包括第一表面和与所述第一表面相对的第二表面，所述活性层位于 与第一化合物半导体层的第二表面接触，和第二化合物半导体层; 其中第一化合物半导体层的第一表面具有第一表面区域和第二表面区域，第一和第二表面区域在高度或粗糙度中的至少一个方面不同，至少形成第一光反射层 第一表面区域的一部分和第一电极形成在第二表面区域的至少一部分上。

    TUNABLE OPTICAL PHASE FILTER
    8.
    发明申请
    TUNABLE OPTICAL PHASE FILTER 有权
    可逆光学滤波器

    公开(公告)号：US20170005455A1

    公开(公告)日：2017-01-05

    申请号：US14956888

    申请日：2015-12-02

    申请人： SAE Magnetics (H.K.) Ltd.

    发明人： Babu Dayal PADULLAPARTHI

    IPC分类号： H01S5/183 ,  H01S5/028 ,  H01S5/042 ,  H01S5/187 ,  H01S5/343

    CPC分类号： H01S5/18386 ,  H01S5/18311 ,  H01S5/18391 ,  H01S5/34313 ,  H01S5/3434

    摘要： An embodiment provides a 850 nm VCSEL transmitter that includes an active region having: one or more quantum wells having InGaAs material; and two or more quantum well barriers having AlGaAs or GaAsP materials adjacent to the one or more quantum wells. An in-phase or anti-phase, step or ring surface relief structure depth control is made on either (i) the topmost GaAs surface/contact layers by either dry or wet etching, or (ii) with the help of PECVD made thin SiN layer made on GaAs layer with wet etching for tunable static and dynamic characteristics such as output power, slope efficiency, and resonance oscillation bandwidth, photon lifetime through its damping, rise/fall times of eye-opening, over shooting, and jitter respectively. Moreover, anti-phase surface relief structure diameter control can be made on the topmost GaAs step surface/contact, or SiN ring layers for filtering of higher order modes and reduction of spectral line width.

    摘要翻译： 实施例提供一种850nm VCSEL发射器，其包括有源区域，该有源区域具有：具有InGaAs材料的一个或多个量子阱; 以及具有与一个或多个量子阱相邻的AlGaAs或GaAsP材料的两个或更多个量子阱屏障。 通过干蚀刻或湿蚀刻，在（i）最上面的GaAs表面/接触层上进行同相或反相，阶梯或环表面浮雕结构深度控制，或（ii）借助于PECVD制成的薄SiN 分别通过湿法刻蚀制成GaAs层，可调谐静态和动态特性如输出功率，斜率效率和谐振振荡带宽，光子寿命通过其阻尼，睁眼上升/下降时间，过拍和抖动。 此外，可以在最高的GaAs台阶表面/接触上进行抗相表面浮雕结构直径控制，或者可以对SiN环层进行高阶模式的滤波和降低谱线宽度。

    Correction circuit, drive circuit, light emission unit, and method of correcting current pulse waveform
    10.
    发明授权
    Correction circuit, drive circuit, light emission unit, and method of correcting current pulse waveform 有权
    校正电路，驱动电路，发光单元以及纠正电流脉冲波形的方法

    公开(公告)号：US09136670B2

    公开(公告)日：2015-09-15

    申请号：US14030345

    申请日：2013-09-18

    申请人： Sony Corporation

    发明人： Osamu Maeda ,  Katsuhisa Daio

    IPC分类号： H01S3/00 ,  H01S5/042 ,  H01S5/068 ,  H01S5/022 ,  H01S5/024 ,  H01S5/06 ,  H01S5/062 ,  H01S5/183 ,  H01S5/42

    CPC分类号： H01S5/0428 ,  H01S5/02276 ,  H01S5/02469 ,  H01S5/0617 ,  H01S5/06226 ,  H01S5/06804 ,  H01S5/06808 ,  H01S5/06812 ,  H01S5/18313 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/423

    摘要： A correction circuit includes a correction section configured to superpose a second current pulse on a first current pulse, and thereby correcting a waveform of the first current pulse, the first current pulse being output from a current source configured to drive a surface-emitting semiconductor laser in a pulsed manner, the correction section being configured to allow the second pulse to have a waveform obtained through attenuating a crest value of the second current pulse with time, increasing an initial crest value of the second current pulse by an amount that is larger as magnitude of the first current pulse is larger, and allowing the amount by which the initial crest value is increased to be smaller as ambient temperature of the semiconductor laser is higher, and being configured to output the second pulse having the waveform.

    摘要翻译： 校正电路包括校正部分，其被配置为在第一电流脉冲上叠加第二电流脉冲，从而校正第一电流脉冲的波形，所述第一电流脉冲从被配置为驱动表面发射半导体激光器的电流源输出 以脉冲方式，校正部分被配置为允许第二脉冲具有通过随时间衰减第二电流脉冲的峰值而获得的波形，将第二电流脉冲的初始峰值增加大于 第一电流脉冲的大小较大，并且允许初始峰值增加的量随着半导体激光器的环境温度而降低，并且被配置为输出具有波形的第二脉冲。