公开(公告)号：US20120105746A1

公开(公告)日：2012-05-03

申请号：US13279440

申请日：2011-10-24

申请人： Kwan-sik MIN ,  Da-hye KIM

发明人： Kwan-sik MIN ,  Da-hye KIM

IPC分类号： G02F1/1335 ,  G02B27/26

CPC分类号： H04N13/341 ,  H04N13/337 ,  H04N2213/008

摘要： A 3D display apparatus includes a 3D panel which displays a 3D image, a first circular polarization film which is attached to a front side of the 3D panel and converts the 3D image to a circular polarization component by retarding a phase, and 3D glasses including a second circular polarization film which converts the circular polarization component converted by the first circular polarization film to a linear polarization component by retarding a phase, a liquid crystal unit which allows the linear polarization component to pass or isolates the linear polarization component from passing based on a state of the power, and a linear polarization plate which allows the linear polarization component to pass or isolates the linear polarization component from passing based on a direction of the linear polarization component.

摘要翻译： 3D显示装置包括显示3D图像的3D面板，附接到3D面板的前侧的第一圆偏振膜，并且通过延迟相位将3D图像转换为圆偏振分量，以及包括 第二圆偏振膜，其通过延迟相位将由第一圆偏振膜转换的圆偏振分量转换为线偏振分量;允许线偏振分量通过或隔离线偏振分量而不通过的液晶单元， 功率状态，以及线性偏振板，其允许线性偏振分量基于线偏振分量的方向通过或隔离线偏振分量而不通过。

公开(公告)号：US20120119243A1

公开(公告)日：2012-05-17

申请号：US13109669

申请日：2011-05-17

申请人： Chang Yeon KIM ,  Da Hye KIM ,  Hong Chul LIM ,  Joon Hee LEE ,  Jong Kyun YOU

发明人： Chang Yeon KIM ,  Da Hye KIM ,  Hong Chul LIM ,  Joon Hee LEE ,  Jong Kyun YOU

IPC分类号： H01L33/22

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/73265

摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

摘要翻译： 本发明的示例性实施例涉及一种高效率发光二极管（LED）。 根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层 半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型 半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。

公开(公告)号：US09029888B2

公开(公告)日：2015-05-12

申请号：US13109669

申请日：2011-05-17

申请人： Chang Yeon Kim ,  Da Hye Kim ,  Hong Chul Lim ,  Joon Hee Lee ,  Jong Kyun You

发明人： Chang Yeon Kim ,  Da Hye Kim ,  Hong Chul Lim ,  Joon Hee Lee ,  Jong Kyun You

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/22

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/73265

摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

摘要翻译： 本发明的示例性实施例涉及一种高效率发光二极管（LED）。 根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层 半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型 半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。