公开(公告)号：US09029888B2

公开(公告)日：2015-05-12

申请号：US13109669

申请日：2011-05-17

申请人： Chang Yeon Kim ,  Da Hye Kim ,  Hong Chul Lim ,  Joon Hee Lee ,  Jong Kyun You

发明人： Chang Yeon Kim ,  Da Hye Kim ,  Hong Chul Lim ,  Joon Hee Lee ,  Jong Kyun You

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/46 ,  H01L33/22

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/73265

摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

摘要翻译： 本发明的示例性实施例涉及一种高效率发光二极管（LED）。 根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层 半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型 半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。

公开(公告)号：US08624159B2

公开(公告)日：2014-01-07

申请号：US13410884

申请日：2012-03-02

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

IPC分类号： B23K26/02

CPC分类号： H01L33/0079

摘要： An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.

摘要翻译： 提供了一种使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。

公开(公告)号：US08410506B2

公开(公告)日：2013-04-02

申请号：US13077371

申请日：2011-03-31

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/382

摘要： Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

公开(公告)号：US08288781B2

公开(公告)日：2012-10-16

申请号：US12570456

申请日：2009-09-30

申请人： Won Cheol Seo ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheul Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

发明人： Won Cheol Seo ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheul Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US20100078656A1

公开(公告)日：2010-04-01

申请号：US12570456

申请日：2009-09-30

申请人： Won Cheol SEO ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheul Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

发明人： Won Cheol SEO ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheul Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US08791483B2

公开(公告)日：2014-07-29

申请号：US13077254

申请日：2011-03-31

申请人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Kyung Hee Ye ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

摘要翻译： 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

公开(公告)号：US08618565B2

公开(公告)日：2013-12-31

申请号：US12986774

申请日：2011-01-07

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/382

摘要： Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

摘要翻译： 提供了一种高效率发光二极管（LED），其包括：支撑基板; 位于所述支撑基板上的半导体堆叠，所述半导体堆叠包括p型化合物半导体层，有源层和n型化合物半导体层; 位于所述支撑衬底和所述半导体堆叠之间并与所述半导体堆叠欧姆接触的第一电极; 位于所述第一电极的暴露于所述半导体叠层外部的部分上的第一焊盘; 以及位于半导体堆叠上的第二电极。 突起形成在半导体堆叠的暴露表面上。 此外，第二电极可以位于第一电极和支撑衬底之间，并且通过半导体叠层的开口与n型化合物半导体层接触。

公开(公告)号：US09142715B2

公开(公告)日：2015-09-22

申请号：US13099127

申请日：2011-05-02

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim ,  Hwa Mok Kim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim ,  Hwa Mok Kim

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/02

CPC分类号： H01L33/10 ,  H01L33/025 ,  H01L2933/0091

摘要： An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.

摘要翻译： 本发明的示例性实施例涉及一种发光二极管（LED），其包括衬底，布置在衬底上的第一氮化物半导体层，布置在第一氮化物半导体层上的有源层，布置在有源层上的第二氮化物半导体层 层，设置在第一氮化物半导体层之间或第二氮化物半导体层和有源层之间的第三氮化物半导体层，在第三氮化物半导体层内包括多个散射元件的第三氮化物半导体层和分布式布拉格反射器 DBR），所述基板布置在所述DBR和所述第三氮化物半导体层之间。

公开(公告)号：US08153509B2

公开(公告)日：2012-04-10

申请号：US12693907

申请日：2010-01-26

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

IPC分类号： H01L21/329 ,  H01L33/02 ,  H01L21/428

CPC分类号： H01L33/0079

摘要： Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.

摘要翻译： 公开了使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电类型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。 因此，在激光剥离过程中，可以容易地实现激光束的聚焦，并且防止外延层破裂或断裂。 激光剥离处理由包括加热器的激光剥离装置进行。

公开(公告)号：US20110053302A1

公开(公告)日：2011-03-03

申请号：US12693907

申请日：2010-01-26

申请人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

发明人： Chang Youn Kim ,  Joon Hee Lee ,  Jong Kyun You ,  Hwa Mok Kim

IPC分类号： H01L33/00 ,  B23K26/00

CPC分类号： H01L33/0079

摘要： Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.

摘要翻译： 公开了使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电类型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。 因此，在激光剥离过程中，可以容易地实现激光束的聚焦，并且防止外延层破裂或断裂。 激光剥离处理由包括加热器的激光剥离装置进行。