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公开(公告)号:US20130105920A1
公开(公告)日:2013-05-02
申请号:US13287575
申请日:2011-11-02
CPC分类号: B81C1/00476 , B81B2203/0315 , B81C99/007 , B81C2201/0108 , H01L21/56 , H01L23/544 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要: Micro-Electro-Mechanical System (MEMS) structures, metrology structures and methods of manufacture are disclosed. The method includes forming one or metrology structure, during formation of a device in a chip area. The method further includes venting the one or more metrology structure after formation of the device.
摘要翻译: 公开了微机电系统(MEMS)结构,计量结构和制造方法。 该方法包括在芯片区域中的器件形成期间形成一个或计量结构。 该方法还包括在形成装置之后排出一个或多个计量结构。
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2.
公开(公告)号:US20120086101A1
公开(公告)日:2012-04-12
申请号:US12898885
申请日:2010-10-06
申请人: David A. DeMuynck , Zhong-Xiang He , Daniel R. Miga , Matthew D. Moon , Daniel S. Vanslette , Eric J. White
发明人: David A. DeMuynck , Zhong-Xiang He , Daniel R. Miga , Matthew D. Moon , Daniel S. Vanslette , Eric J. White
IPC分类号: H01L29/86 , H01L23/522 , H01L21/02
CPC分类号: H01L21/76843 , H01L21/76802 , H01L21/76834 , H01L21/76846 , H01L21/76879 , H01L23/5227 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要: The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect.
摘要翻译: 本公开一般涉及集成电路(IC),IC互连及其制造方法,更具体地,涉及高性能电感器。 IC包括设置在基板上的电介质层内的至少一个沟槽。 沟槽被保形地涂覆有衬里和种子层,并且包括内部的互连。 互连包括在互连的侧壁上的硬掩模。
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公开(公告)号:US08796058B2
公开(公告)日:2014-08-05
申请号:US13287575
申请日:2011-11-02
CPC分类号: B81C1/00476 , B81B2203/0315 , B81C99/007 , B81C2201/0108 , H01L21/56 , H01L23/544 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要: Micro-Electro-Mechanical System (MEMS) structures, metrology structures and methods of manufacture are disclosed. The method includes forming one or metrology structure, during formation of a device in a chip area. The method further includes venting the one or more metrology structure after formation of the device.
摘要翻译: 公开了微机电系统(MEMS)结构,计量结构和制造方法。 该方法包括在芯片区域中的器件形成期间形成一个或计量结构。 该方法还包括在形成装置之后排出一个或多个计量结构。
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