公开(公告)号：US08987038B2

公开(公告)日：2015-03-24

申请号：US13165670

申请日：2011-06-21

Applicant: Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

Inventor： Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

IPC: H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2˜20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract translation: 公开了一种用于形成具有选择性发射体的太阳能电池的方法，包括选择性地去除衬底上的阻挡层的一部分以形成开口，对衬底进行纹理蚀刻工艺以在第二区域内形成第二纹理结构 所述阻挡层的开口，其中所述第一区域中的所述基板表面不从所述第一纹理结构变化。 第一纹理结构和第二纹理结构包括多个突出部分和凹陷部分。 第一纹理结构的相邻突出部之间的距离为L1，第二纹理结构的相邻突出部之间的距离为L2，L1为L2的2​​〜20倍。 用于形成具有选择性发射极的太阳能电池的方法还包括去除阻挡层并进行掺杂工艺。

公开(公告)号：US20130133728A1

公开(公告)日：2013-05-30

申请号：US13489443

申请日：2012-06-05

Applicant: Der-Chin Wu ,  Jui-Chung Shiao ,  Chien-Hsun Chen ,  Ching-Hsi Lin ,  Dimitre Zahariev Dimitrov

Inventor： Der-Chin Wu ,  Jui-Chung Shiao ,  Chien-Hsun Chen ,  Ching-Hsi Lin ,  Dimitre Zahariev Dimitrov

IPC: H01L31/075

CPC classification number: H01L31/0682 ,  H01L31/0747 ,  Y02E10/547

Abstract: A back-contact heterojunction solar cell, having a first conductive type silicon substrate, a first amorphous semiconductor layer, a second amorphous semiconductor layer, a first conductive type semiconductor layer, a second conductive type semiconductor layer and a second conductive type doped region is introduced. The first amorphous semiconductor layer disposed on the illuminated surface of the silicon substrate is an intrinsic semiconductor layer or is of the first conductive type. The second amorphous semiconductor layer disposed on the non-illuminated surface of the silicon substrate is an intrinsic semiconductor layer. The first and the second conductive type semiconductor layers are disposed on the second amorphous semiconductor layer. The second conductive type doped region is located in the silicon substrate under the second conductive type semiconductor layer and is in contact with the second amorphous semiconductor layer.

Abstract translation: 引入具有第一导电型硅衬底，第一非晶半导体层，第二非晶半导体层，第一导电类型半导体层，第二导电类型半导体层和第二导电型掺杂区域的背接触异质结太阳能电池 。 设置在硅衬底的被照射表面上的第一非晶半导体层是本征半导体层，或者是第一导电类型。 设置在硅衬底的非照射表面上的第二非晶半导体层是本征半导体层。 第一和第二导电型半导体层设置在第二非晶半导体层上。 第二导电型掺杂区域位于第二导电类型半导体层下面的硅衬底中，并与第二非晶半导体层接触。

公开(公告)号：US20120090673A1

公开(公告)日：2012-04-19

申请号：US13165670

申请日：2011-06-21

Applicant: Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

Inventor： Dimitre Zahariev Dimitrov ,  Ching-Hsi Lin ,  Chung-Wen Lan ,  Der-Chin Wu

IPC: H01L31/06 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L1, the distance between neighboring protruding portions of the second texture structure is L2, and L1 is 2-20 times that of L2. The method for forming a solar cell with selective emitters further comprises removing the barrier layer and performing a doping process.

Abstract translation: 公开了一种用于形成具有选择性发射体的太阳能电池的方法，包括选择性地去除衬底上的阻挡层的一部分以形成开口，对衬底进行纹理蚀刻工艺以在第二区域内形成第二纹理结构 所述阻挡层的开口，其中所述第一区域中的所述基板表面不从所述第一纹理结构变化。 第一纹理结构和第二纹理结构包括多个突出部分和凹陷部分。 第一纹理结构的相邻突出部之间的距离为L1，第二纹理结构的相邻突出部之间的距离为L2，L1为L2的2​​-20倍。 用于形成具有选择性发射极的太阳能电池的方法还包括去除阻挡层并进行掺杂工艺。

公开(公告)号：US20120138128A1

公开(公告)日：2012-06-07

申请号：US13179448

申请日：2011-07-08

Applicant: Der-Chin Wu ,  Jui-Chung Shiao ,  Wei-Chih Hsu ,  Chien-Hsun Chen

Inventor： Der-Chin Wu ,  Jui-Chung Shiao ,  Wei-Chih Hsu ,  Chien-Hsun Chen

IPC: H01L31/06

CPC classification number: H01L31/072 ,  H01L31/02245 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is disclosed, including the following elements. A through hole passes through a substrate, wherein the substrate includes a third surface in the through hole. A first thin film semiconductor layer is disposed on the third surface in the through hole and extended to be over the second surface of the substrate, wherein the first thin film semiconductor layer is second type. A second thin film semiconductor layer is disposed on the first surface of the substrate. A through hole connection layer is disposed in the through hole and extended to be over the first surface and the second surface of the substrate, wherein a junction is formed between the first thin film semiconductor layer and the substrate to prevent shorts from occurring between the through hole connection layer and the substrate.

Abstract translation: 公开了一种太阳能电池，包括以下元件。 通孔穿过衬底，其中衬底在通孔中包括第三表面。 第一薄膜半导体层设置在通孔的第三表面上并延伸到衬底的第二表面之上，其中第一薄膜半导体层是第二类型。 第二薄膜半导体层设置在基板的第一表面上。 通孔连接层设置在通孔中并且延伸到基板的第一表面和第二表面之上，其中在第一薄膜半导体层和基板之间形成接合部，以防止在贯穿孔之间发生短路 孔连接层和基板。