Chemical-mechanical polishing slurry formulation and method for tungsten
and titanium thin films
    1.
    发明授权
    Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films 失效
    化学机械抛光浆料配方及钨钛薄膜的制备方法

    公开(公告)号:US5916855A

    公开(公告)日:1999-06-29

    申请号:US829704

    申请日:1997-03-26

    摘要: A polishing slurry composition and its method of making for planarization of silicon semiconductor wafers by chemical mechanical polishing of the wafer. A slurry formulation utilizing a ferric salt tungsten oxidizer, an ammonium persulfate titanium oxidizer, a fatty acid suspension agent, alumina particles with a small diameter and tight diameter range, coated with a solubility coating, and a chemical stabilizer, provides high tungsten and titanium polish rates with high selectivity to silicon dioxide, and good oxide defectivity for use in tungsten local interconnect applications. A method for making a tungsten slurry includes first thoroughly blending small diameter alumina particles with a tight diameter range in an aqueous concentrate with a suspension agent, then mixing with water and oxidizers. Ferric salt tungsten slurries made by this method provide excellent tungsten polish characteristics for via plug and local interconnect applications.

    摘要翻译: 抛光浆料组合物及其通过晶片的化学机械抛光来制造硅半导体晶片的平面化的方法。 使用三价铁钨氧化剂,过硫酸铵钛氧化剂,脂肪酸悬浮剂,小直径和紧密直径范围的氧化铝颗粒,涂覆有溶解度涂层和化学稳定剂的浆料配方提供高钨和钛抛光 对二氧化硅具有高选择性的速率,以及用于钨局部互连应用的良好的氧化物缺陷率。 一种制备钨浆料的方法包括首先用具有悬浮剂的含水浓缩物中将紧密直径范围的小直径氧化铝颗粒充分混合,然后与水和氧化剂混合。 通过该方法制备的铁盐钨浆通过插塞和局部互连应用提供优异的钨酸盐抛光特性。