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1.发明授权Method for producing high-aspect ratio hollow diffused regions in a semiconductor body 失效在半导体本体中制造高纵横比中空扩散区域的方法
公开(公告)号：US4595428A
公开(公告)日：1986-06-17
申请号：US567708
申请日：1984-01-03
IPC分类号： H01L29/861 , H01L21/225 , H01L21/24 , H01L21/268 , H01L21/228
CPC分类号： H01L21/2254 , H01L21/24 , H01L21/268 , Y10S438/94
摘要： A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.
摘要翻译： 公开了半导体器件及其制备方法，其中半导体材料体具有至少一个完全贯穿其中的孔，该孔具有小于约1.5密耳的基本上恒定的直径，并且平均长度与直径之比为 至少约6:1，该孔由再结晶状态的半导体材料的区域限定，其中遍及整个区域中的至少一种金属的原子的均匀浓度水平基本上恒定，选自铝，铟， 镓，锑，金，银和锡以及半导体材料的初始含量。
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公开(公告)号：US4527183A
公开(公告)日：1985-07-02
申请号：US282218
申请日：1981-07-10
IPC分类号： G01T1/24 , G01T1/29 , H01L27/14 , H01L27/146 , H01L31/0352 , H01L31/09 , H01L29/06
CPC分类号： H01L31/03529 , H01L27/14643 , H01L27/14649 , Y02E10/50 , Y10S438/94
摘要： A semiconductor device for the detection of radiation in general and X-radiation and infrared radiation in particular is provided.
摘要翻译： 提供一般用于检测辐射的半导体器件，特别是X射线和红外辐射。
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公开(公告)号：US4252263A
公开(公告)日：1981-02-24
申请号：US139177
申请日：1980-04-11
申请人： Douglas E. Houston
发明人： Douglas E. Houston
CPC分类号： B23K20/023
摘要： A method which utilizes thermo-compression diffusion bonding to attach a metal foil to structured copper. The different rate of expansion of metal press members with temperature creates a force which squeezes the foil and copper together to achieve a bond when the press and the parts to be joined are heated to an elevated temperature. Because of the high pressure achieved by the press, diffusion bonding occurs at a low enough temperature to avoid problems associated with use of the liquid phase of any of the metals undergoing bonding.
摘要翻译： 利用热压缩扩散接合将金属箔附着在结构化铜上的方法。 金属压制构件与温度的不同膨胀率产生了将压制件和待接合部件加热到升高的温度时将箔和铜挤压在一起以实现粘结的力。 由于压力实现的高压力，扩散结合发生在足够低的温度下，以避免与使用任何正在接合的金属的液相相关的问题。
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公开(公告)号：US4204628A
公开(公告)日：1980-05-27
申请号：US927346
申请日：1978-07-24
CPC分类号： B23K20/02
摘要： An improved method for thermo-compression diffusion bonding allows bonding of a compliant metallic member to a second metallic member which may have surface irregularities. Opposite surfaces of the compliant metallic member are contacted by a layer of compactible material and by the second metallic member, respectively, such that distribution of a loading force applied to this assembly conforms the compliant member to the irregularities in the surface contour of the second metallic member. Thus, a uniform substantially void-free diffusion bond between the two metallic members is achieved.
摘要翻译： 用于热压缩扩散接合的改进方法允许柔性金属构件与可能具有表面不规则性的第二金属构件接合。 顺应性金属构件的相对表面分别由可压缩材料层和第二金属构件接触，使得施加到该组件上的加载力的分布使柔顺构件符合第二金属的表面轮廓中的凹凸 会员。 因此，实现了两个金属构件之间均匀的基本上无空隙的扩散接合。
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5.发明授权Cooled semiconductor power module including structured strain buffers without dry interfaces 失效冷却的半导体功率模块包括没有干接口的结构应变缓冲器
公开(公告)号：US4392153A
公开(公告)日：1983-07-05
申请号：US958100
申请日：1978-11-06
IPC分类号： H01L23/48 , H01L23/051 , H01L23/40 , H01L23/473 , H01L29/74 , H01L25/04 , H01L29/44
CPC分类号： H01L23/4006 , H01L23/051 , H01L23/473 , H01L2023/4025 , H01L2924/0002 , H01L2924/01079
摘要： A semiconductor electronic device operates at high power levels using structured copper to reduce generation of stress between the elements of the device during thermal cycling in the course of normal operation. Structured copper strain buffers are used to attach each side of a silicon wafer to fluid cooled heat sinks to provide efficient removal of heat generated by the device and good electrical connection to the silicon wafer.
摘要翻译： 半导体电子器件使用结构化铜在高功率水平下工作，以在正常操作过程中减少热循环期间器件元件之间的应力产生。 结构化铜应变缓冲器用于将硅晶片的每一侧连接到流体冷却的散热器，以有效地去除由该器件产生的热量和与硅晶片的良好电连接。
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6.发明授权Method for thermo-compression diffusion bonding each side of a substrateless semiconductor device wafer to respective structured copper strain buffers 失效将无基底半导体器件晶片的每一侧热压缩扩散粘合到各自的结构化铜应变缓冲器的方法
公开(公告)号：US4257156A
公开(公告)日：1981-03-24
申请号：US19294
申请日：1979-03-09
申请人： Douglas E. Houston
发明人： Douglas E. Houston
IPC分类号： H01L21/48 , H01L21/603 , B23K20/14 , H01L21/58
CPC分类号： H01L24/33 , H01L21/48 , H01L24/83 , H01L2224/8319 , H01L2224/83801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , Y10T29/49117
摘要： A method is provided for thermo-compression diffusion bonding first and second structured copper strain buffers, respectively, directly to the two opposed surfaces of a substrateless semiconductor device wafer. The expensive tungsten or molybdenum support plate conventionally used to provide structural integrity to the relatively fragile semiconductor device wafer is thus eliminated. The method includes sandwiching the semiconductor device wafer between copper strand type strain buffers each having a lateral extent greater than the lateral extent of the wafer, diffusion bonding the strain buffers to the semiconductor device via first and second metallic coating layers, and removing most of the overhanging portions of the buffer which are not bonded to the wafer. A step of etching and passivating the edges of the wafer is also disclosed.
摘要翻译： 提供了一种分别将第一和第二结构铜应变缓冲器直接热压缩扩散到无基底半导体器件晶片的两个相对表面的方法。 因此，消除了通常用于向相对脆弱的半导体器件晶片提供结构完整性的昂贵的钨或钼支撑板。 该方法包括将半导体器件晶片夹在各自具有大于晶片的横向范围的横向范围的铜绞线型应变缓冲器之间，通过第一和第二金属涂层将应变缓冲器扩散连接到半导体器件，并且将大部分 不结合到晶片的缓冲器的悬垂部分。 还公开了蚀刻和钝化晶片边缘的步骤。
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公开(公告)号：US4198247A
公开(公告)日：1980-04-15
申请号：US967281
申请日：1978-12-07
IPC分类号： H01L21/24 , H01L21/228
CPC分类号： H01L21/24 , Y10S438/902
摘要： A sealant film is employed to migrate species having a high intrinsic vapor pressure through a solid body of semiconductor material by temperature gradient zone melting.
摘要翻译： 采用密封膜将具有高固有蒸汽压的物质通过温度梯度区熔化的半导体材料的固体物质迁移。
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公开(公告)号：US4159916A
公开(公告)日：1979-07-03
申请号：US941922
申请日：1978-09-13
申请人： Douglas E. Houston
发明人： Douglas E. Houston
IPC分类号： H01L21/24 , H01L21/225
CPC分类号： H01L21/24
摘要： Mutually perpendicular, intersecting, straight, fine molten wires, (.ltoreq.0.002" in width) can be migrated through a solid matrix body of semiconductor material of (100) planar orientation by migration along a unidirectional thermal gradient which is established and maintained at from 2.degree. to 10.degree. off the normally preferred crystal axis of migration by the thermal gradient zone melting process. All the fine molten metal wires are substantially initiated simultaneously and uniformly along the entire length of each intersecting wire when the lines are arranged in a cross-hatched pattern.
摘要翻译： 相互垂直的，相交的，直的，细的熔融电线（宽度为晶体轴迁移的2°至10°。 当线条以交叉阴影线排列时，所有细的熔融金属线都沿着每个交叉线的整个长度同时且均匀地起始。
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公开(公告)号：US4570173A
公开(公告)日：1986-02-11
申请号：US544935
申请日：1983-10-24
IPC分类号： H01L21/268 , H01L29/06
CPC分类号： H01L21/268 , H01L29/0657
摘要： A semiconductor device and a method for its preparation are disclosed, wherein a semiconductor body has at least one bore extending completely or partially therethrough, this bore being defined by a semiconducting region having a conductivity type opposite to, and resistivity lower than, the material of the body contiguous to the bore-defining semiconducting region, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1.
摘要翻译： 公开了一种半导体器件及其制备方法，其中半导体本体具有至少一个完全或部分穿过其延伸的孔，该孔由具有导电类型的电导率类型的半导体区域限定，并且电阻率低于 邻近钻孔限定半导体区域的主体，该孔具有小于约1.5密耳的基本上恒定的直径和至少约6:1的平均长径比。
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10.发明授权Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby 失效用于在半导体本体中制造高纵横比中空扩散区域的方法及其制造的二极管
公开(公告)号：US4720308A
公开(公告)日：1988-01-19
申请号：US843346
申请日：1986-03-24
IPC分类号： H01L21/225 , H01L21/24 , H01L21/268 , H01L29/06
CPC分类号： H01L21/225 , H01L21/24 , H01L21/268
摘要： A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.
摘要翻译： 公开了半导体器件及其制备方法，其中半导体材料体具有至少一个完全贯穿其中的孔，该孔具有小于约1.5密耳的基本上恒定的直径，并且平均长度与直径之比为 至少约6:1，该孔由再结晶状态的半导体材料的区域限定，其中遍及整个区域中的至少一种金属的原子的均匀浓度水平基本上恒定，选自铝，铟， 镓，锑，金，银和锡以及半导体材料的初始含量。
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