公开(公告)号：US20030025488A1

公开(公告)日：2003-02-06

申请号：US10263007

申请日：2002-10-01

Applicant: EMC TECHNOLOGY, INC.

Inventor： Joseph B. Mazzochette ,  Robert Blacka ,  David Markman

IPC: G01R023/04

CPC classification number: H03L7/10 ,  G01R21/04 ,  H03L7/07 ,  H03L7/087 ,  H03L7/0891 ,  H03L7/0995

Abstract: A power sensing RF termination comprising a calibration means allows the user to correct for part-to-part variation, miss match loss and output offset. The power sensing RF termination comprises a first and second temperature sensitive resistors connected at a first common junction, a switching means for connecting either an RF input or a DC power reference to the first common junction, a first switch for connecting either a DC voltage source or a first current detecting resistor to the first temperature sensitive resistor, and a second current detecting resistor connected to the second temperature sensitive resistor. A first output terminal is connected to the junction between the first switch and the first temperature sensitive resistor. A second output terminal is connected to the first common junction. A third output terminal is connected to the junction between the second temperature sensitive resistor and the second current detecting resistor. The first and second temperature sensitive resistors have substantially the same temperature coefficient of resistance; but the first temperature sensitive resistor has a positive temperature coefficient of resistance while the second temperature sensitive resistor has a negative temperature coefficient of resistance. Using the measurements of the voltages at the first, second and third output terminals, a calibration table is formed correlating the power absorbed in the first and second temperature sensitive resistors to the ratio between the voltage drop across either the first or second temperature sensitive resistor and the voltage drop across both the first and second temperature resistive resistors.

公开(公告)号：US3354412A

公开(公告)日：1967-11-21

申请号：US50577965

申请日：1965-11-01

Applicant: EMC TECHNOLOGY INC

Inventor： MARK STEIDLITZ

IPC: H01P1/26

CPC classification number: H01P1/268 ,  Y10T29/49082

公开(公告)号：US20030026991A1

公开(公告)日：2003-02-06

申请号：US10219215

申请日：2002-08-13

Applicant: EMC TECHNOLOGY, INC.

Inventor： Rajendra Shah ,  Joseph B. Mazzochette ,  Martin A. Helfand

IPC: B32B009/00

CPC classification number: H01C17/0652 ,  H01C1/084 ,  H01C7/048 ,  H01L23/3732 ,  H01L27/013 ,  H01L27/016 ,  H01L2924/0002 ,  Y10T428/265 ,  Y10T428/30 ,  H01L2924/00

Abstract: A substrate having a diamond or diamond-like carbon coating of at least one micron thickness on an underlayer of an insulating material such as AlN. Such a substrate is advantageously used as a mounting for passive electrical components such as microwave and radio-frequency (rf) resistors, capacitors, attenuators, terminators and loads.

Abstract translation: 在绝缘材料如AlN的底层上具有至少一微米厚度的金刚石或类金刚石碳涂层的基底。 这种衬底有利地用作无源电气部件如微波和射频（rf）电阻器，电容器，衰减器，终端器和负载的安装。

公开(公告)号：US3417294A

公开(公告)日：1968-12-17

申请号：US60295666

申请日：1966-12-19

Applicant: EMC TECHNOLOGY INC

Inventor： STEIDLITZ MARK

IPC: H05K1/02 ,  H05K1/18

CPC classification number: H05K1/186 ,  H05K1/0243 ,  H05K2201/0394 ,  H05K2201/0715 ,  H05K2201/10651