Implantable Magnetically Activated Actuator
    1.
    发明申请
    Implantable Magnetically Activated Actuator 审中-公开
    可植入磁性激活致动器

    公开(公告)号:US20100228167A1

    公开(公告)日:2010-09-09

    申请号:US11989795

    申请日:2006-07-31

    IPC分类号: A61H7/00

    CPC分类号: A61B17/7216

    摘要: An implantable magnetically activated actuator suitable for causing distraction, compression/contraction and/or oscillation of body organs and/or bones, comprising: a hollow housing comprising rear and front ends; a rod movably disposed in the rear portion of said hollow housing; magnetic coupling means comprising static magnetic/ferromagnetic elements affixed along the inner wall of said hollow housing and movable magnetic/ferromagnetic elements affixed along said movable rod in proximity to said stationary magnetic/ferromagnetic elements; mechanical means for transferring reciprocating motion of said movable rod.

    摘要翻译: 一种适于引起身体器官和/或骨骼的牵引,压缩/收缩和/或振动的可植入磁性致动致动器,包括:包括后端和前端的中空壳体; 可移动地设置在所述中空壳体的后部中的杆; 磁耦合装置包括沿着所述中空壳体的内壁固定的静磁/铁磁元件和沿着所述可移动杆附近固定的磁/铁磁元件附近的可移动磁/铁磁元件; 用于传送所述活动杆的往复运动的机械装置。

    Method and apparatus for cleaving semiconductor wafers
    2.
    发明授权
    Method and apparatus for cleaving semiconductor wafers 失效
    用于切割半导体晶片的方法和装置

    公开(公告)号:US5740953A

    公开(公告)日:1998-04-21

    申请号:US193188

    申请日:1994-05-17

    摘要: A method and apparatus are described for cleaving a relatively thin semiconductor wafer for inspecting a target feature on a workface thereof by: producing, on a first lateral face of the semiconductor wafer, laterally of the workface on one side of the target feature, an indentation in alignment with the target feature; and inducing by impact, in a second lateral face of the semiconductor wafer, laterally of the workface on the opposite side of the target feature, a shock wave substantially in alignment with the target feature and the indentation on the first lateral face, to split the semiconductor wafer along a cleavage plane essentially coinciding with the target feature and the indentation.

    摘要翻译: PCT No.PCT / EP92 / 01867 Sec。 371日期:1994年5月17日 102(e)日期1994年5月17日PCT提交1992年8月14日PCT公布。 公开号WO93 / 04497 日期1993年3月4日描述了一种方法和装置,用于通过以下步骤来切割用于检查其工作面上的目标特征的相对薄的半导体晶片:在半导体晶片的第一侧面上,在 目标特征,与目标特征对齐的缩进; 并且通过冲击在所述半导体晶片的第二侧面中在所述目标特征的相对侧上的所述工作面的横向上引入基本上与所述目标特征和所述第一侧面上的所述凹陷对准的冲击波, 半导体晶片沿着解理平面基本上与目标特征和凹陷重合。