Abstract:
A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.
Abstract:
The resonant device comprises an electromechanical resonator of nanometric or micrometric size that comprises a mobile element and a fixed element. Detection means provide detection signals representative of movement of the mobile element with respect to the fixed element to a feedback loop that is connected to an excitation input of the resonator. The resonator is formed on the same substrate as the detection means and feedback loop. The feedback loop comprises at most first and second transistors connected in series between a reference voltage and the excitation terminal. A capacitive load is connected between the excitation terminal and reference voltage. The detection signals control the conductivity of the first transistor.
Abstract:
The device resonant comprises a plurality of synchronized oscillators. Each oscillator comprises a resonator which comprises detection means providing detection signals representative of oscillation of the resonator to a feedback loop connected to an excitation input of the resonator. The detection signals control the conductivity of the feedback loop of the oscillator. The excitation inputs of all the resonators are connected to a common point which constitutes the output of the resonant device. A capacitive load is connected between said common point and a reference voltage.
Abstract:
A method for producing a device including at least one integrated circuit and at least one N/MEMS. The method produces the N/MEMS in at least one upper layer arranged at least above a first section of a substrate, produces the integrated circuit in a second section of the substrate and/or in a semiconductor layer arranged at least above the second section of the substrate, and further produces a cover encapsulating the N/MEMS from at least one layer used for production of a gate in the integrated circuit and/or for producing at least one electrical contact of the integrated circuit.
Abstract:
Device for compensating deformations of a part of an optomechanical or micromechanical system. This device compensates deformations, in a first direction (z), of a mobile part (26) of an apparatus, e.g. of a micromechanical and optomechanical nature, said mobile part being displaceable in a second direction (y), and having at least one arm (50, 52) connecting on the one hand a free end of the mobile part and a fixed part (16) of the apparatus, said arm having an adequate flexibility in the second direction (y), so as not to impede the displacement of the mobile part in said second direction (y), and an adequate rigidity in the first direction (z), so as to limit the deformations of the mobile part in said first direction.
Abstract:
The resonant device comprises an electromechanical resonator of nanometric or micrometric size that comprises a mobile element and a fixed element. Detection means provide detection signals representative of movement of the mobile element with respect to the fixed element to a feedback loop that is connected to an excitation input of the resonator. The resonator is formed on the same substrate as the detection means and feedback loop. The feedback loop comprises at most first and second transistors connected in series between a reference voltage and the excitation terminal. A capacitive load is connected between the excitation terminal and reference voltage. The detection signals control the conductivity of the first transistor.
Abstract:
A microoptical component including a microlens having a focal axis and a microbeam to which said microlens, is integrally fixed said microbeam extending along an axis substantially perpendicular to the focal axis of the microlens and undergoing elastic deformations along an axis substantially perpendicular to the focal axis of the microlens and to the axis along which the microbeam extends.
Abstract:
A method for producing a device including at least one integrated circuit and at least one N/MEMS. The method produces the N/MEMS in at least one upper layer arranged at least above a first section of a substrate, produces the integrated circuit in a second section of the substrate and/or in a semiconductor layer arranged at least above the second section of the substrate, and further produces a cover encapsulating the N/MEMS from at least one layer used for production of a gate in the integrated circuit and/or for producing at least one electrical contact of the integrated circuit.
Abstract:
The device resonant comprises a plurality of synchronized oscillators. Each oscillator comprises a resonator which comprises detection means providing detection signals representative of oscillation of the resonator to a feedback loop connected to an excitation input of the resonator. The detection signals control the conductivity of the feedback loop of the oscillator. The excitation inputs of all the resonators are connected to a common point which constitutes the output of the resonant device. A capacitive load is connected between said common point and a reference voltage.
Abstract:
The invention relates to a detection device using at least one transistor (2) with a vertical channel, comprising a mechanical structure (14), free to move relative to the transistor, in a plane containing the transistor drain (10), source (8) and channel (12).