公开(公告)号：US20040052491A1

公开(公告)日：2004-03-18

申请号：US10660746

申请日：2003-09-12

申请人： FUJITSU QUANTUM DEVICES LIMITED ,  FUJITSU LIMITED

发明人： Fumio Otake ,  Haruhisa Soda

IPC分类号： G02B006/10

CPC分类号： G02F1/2257 ,  G02B2006/12142

摘要： An optical modulator includes a p- or n-type semiconductor layer that is provided at an upper part of an optical waveguide path, and modulating electrodes that are provided at intervals on the semiconductor layer in an extension area of the optical waveguide path. The semiconductor layer has first regions located immediately under the modulating electrodes, and second regions located between the first regions. The second regions have separators that electrically separate the first regions from one another.

摘要翻译： 光调制器包括设置在光波导路径的上部的p型或n型半导体层，以及在光波导路径的扩展区域中在半导体层上间隔设置的调制电极。 半导体层具有位于调制电极正下方的第一区域和位于第一区域之间的第二区域。 第二区域具有将第一区域彼此电分离的隔板。

公开(公告)号：US20040000965A1

公开(公告)日：2004-01-01

申请号：US10463447

申请日：2003-06-18

申请人： FUJITSU QUANTUM DEVICES LIMITED

发明人： Kunihiro Usami ,  Toshiaki Moriuchi

IPC分类号： H01P005/18

CPC分类号： H01P5/185

摘要： A directional coupler includes a transmission line, and a coupling line, the transmission line being coupled with the coupling line. The transmission line is located at a height position different from that of the coupling line with respect to a reference plane. The transmission line and the coupling line have portions that do not overlap each other.

摘要翻译： 定向耦合器包括传输线和耦合线，传输线与耦合线耦合。 传输线位于相对于参考平面与耦合线不同的高度位置处。 传输线和耦合线具有彼此不重叠的部分。

公开(公告)号：US20030183846A1

公开(公告)日：2003-10-02

申请号：US10347694

申请日：2003-01-22

申请人： FUJITSU QUANTUM DEVICES LIMITED

发明人： Hiroyuki Oguri

IPC分类号： H01L031/0328 ,  H01L031/0336 ,  H01L031/072

CPC分类号： H01L29/66318 ,  H01L29/0817 ,  H01L29/7371

摘要： A hetero-junction bipolar transistor includes a collector layer, a base layer and an emitter layer, an emitter electrode containing Au being provided for the emitter layer, and an Au-diffusion barrier layer of InP or InGaP interposed between the emitter electrode and the base layer.

摘要翻译： 异质结双极晶体管包括集电极层，基极层和发射极层，为发射极层提供包含Au的发射极，以及置于发射极和基极之间的InP或InGaP的Au扩散阻挡层 层。

公开(公告)号：US20030183833A1

公开(公告)日：2003-10-02

申请号：US10396404

申请日：2003-03-26

申请人： FUJITSU QUANTUM DEVICES LIMITED

发明人： Shigeo Osaka

IPC分类号： H01L021/00 ,  H01S005/00

CPC分类号： H01S5/028 ,  H01L33/44 ,  H01S5/0282

摘要： An optical semiconductor device includes a laminated layer structure, an intermediate film formed on an end surface of the laminated layer structure, and a passivation film formed on the intermediate film. The passivation film has a quantity of ion projection than that of the intermediate film.

摘要翻译： 光学半导体器件包括层叠层结构，形成在层叠层结构的端面上的中间膜和形成在中间膜上的钝化膜。 钝化膜的离子投影量大于中间膜的离子投影量。

公开(公告)号：US20030098477A1

公开(公告)日：2003-05-29

申请号：US10298950

申请日：2002-11-19

申请人： FUJITSU QUANTUM DEVICES LIMITED

发明人： Kazuo Nambu ,  Junichiro Nikaido

IPC分类号： H01L029/80

CPC分类号： H01L29/66462 ,  H01L29/7783

摘要： At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as the etching stopper layer in a field effect type compound semiconductor device.

摘要翻译： 在半导体基板上依次设置至少沟道层和蚀刻阻挡层，在蚀刻阻挡层上设置肖特基接触蚀刻阻挡层的栅电极，In组成比为0.66〜0.9的InGaP为 在场效应型化合物半导体器件中用作蚀刻停止层。

公开(公告)号：US20020140089A1

公开(公告)日：2002-10-03

申请号：US10090610

申请日：2002-03-06

申请人： Fujitsu Quantum Devices Limited

发明人： Yutaka Mimino ,  Osamu Baba ,  Yoshio Aoki ,  Muneharu Gotoh

IPC分类号： H01L023/34

CPC分类号： H01L23/5286 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multilayer wiring structure for MMICs includes a power-supply wiring formed of a multilayer wiring (a plurality of power-supply lines). The wires are interconnected by throughholes. A power-supply current is divided and supplied to the lines. A large current can be supplied to the entirety of the multilayer wiring, even when the width of each of the lines is reduced. The multilayer wiring structure has an improved degree of freedom in the layout of wiring.

摘要翻译： 用于MMIC的多层布线结构包括由多层布线（多条电源线）形成的电源布线。 电线通过通孔相互连接。 电源电流被分配并提供给线路。 即使当每个线的宽度减小时，也可以向整个多层布线提供大电流。 多层布线结构具有提高布线布局的自由度。

公开(公告)号：US20020140057A1

公开(公告)日：2002-10-03

申请号：US10078346

申请日：2002-02-21

申请人： Fujitsu Quantum Devices Limited

发明人： Osamu Baba ,  Yutaka Mimino

IPC分类号： H01L023/58

CPC分类号： H01L23/5222 ,  H01L23/5225 ,  H01L23/552 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A high frequency semiconductor device includes wiring layers which are formed above a semiconductor substrate and in which transmission lines are formed by combining with a ground plate having a potential fixed at the ground potential, at least one crossing portion in which the wiring layers mutually cross, with insulating interlayers provided therebetween, and at least one separation electrode being selectively provided on one of the insulating interlayers, the at least one separation electrode having a potential fixed at the ground potential. Accordingly, in the high frequency semiconductor device, the electrical interference between two crossing wiring layers is prevented and transmission loss is suppressed.

摘要翻译： 高频半导体器件包括：形成在半导体衬底之上的布线层，其中传输线通过与固定在接地电位的电位的接地板组合，布线层相互交叉的至少一个交叉部分， 其中设置有绝缘夹层，并且至少一个分离电极选择性地设置在绝缘夹层之一上，所述至少一个分离电极具有固定在地电位的电位。 因此，在高频半导体器件中，防止了两个交叉布线层之间的电气干扰，并抑制了传输损耗。

公开(公告)号：US20020130389A1

公开(公告)日：2002-09-19

申请号：US10139238

申请日：2002-05-07

申请人： Fujitsu Quantum Devices Limited

发明人： Kenji Arimochi ,  Tsutom Igarashi ,  Mitsuji Nunokawa

IPC分类号： H01L031/119 ,  H01L029/76 ,  H01L027/108 ,  H01L029/00 ,  H01L021/20

CPC分类号： H01L28/40 ,  H01L21/28587 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66462

摘要： There is provided a compound semiconductor device having a capacitor, to prevent a leakage current flowing between an upper electrode and a lower electrode of the capacitor via an insulating protective film. The compound semiconductor device comprises a first electrode of a capacitor formed on a compound semiconductor substrate via a first insulating film, a dielectric film of the capacitor formed on the first electrode, a second electrode of a capacitor formed on the dielectric film, a second insulating film for covering an upper surface and side surfaces of the second electrode, and an insulating protective film for covering the second insulating film, the dielectric film, the first electrode and the first insulating film, and having a hydrogen containing rate which is larger than the second insulating film.

公开(公告)号：US20020088994A1

公开(公告)日：2002-07-11

申请号：US10035444

申请日：2002-01-04

申请人： Fujitsu Quantum Devices Limited

发明人： Fumikazu Yamaki ,  Takeshi Igarashi

IPC分类号： H01L029/06 ,  H01L031/0328 ,  H01L031/0336 ,  H01L021/3205

CPC分类号： H01L29/812 ,  H01L29/155 ,  H01L29/7371

摘要： A semiconductor device includes a compound semiconductor substrate having a resistivity less than 1.0null108 Ohm-cm at least at one surface thereof, a buffer layer formed on the compound semiconductor substrate and having a super lattice structure, and an active layer formed on the buffer layer and having an active element formed therein.

摘要翻译： 半导体器件包括至少在其一个表面具有小于1.0×10 8 Ohm-cm的电阻率的化合物半导体衬底，形成在化合物半导体衬底上并具有超晶格结构的缓冲层以及形成在缓冲层上的有源层 并且其中形成有活性元件。

公开(公告)号：US20020027935A1

公开(公告)日：2002-03-07

申请号：US09942670

申请日：2001-08-31

申请人： Fujitsu Quantum Devices Limited

发明人： Chikashi Anayama

IPC分类号： H01S005/00

CPC分类号： B82Y20/00 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/34326 ,  H01S5/3434 ,  H01S5/3436 ,  H01S5/34373 ,  H01S5/3438

摘要： An S3-type laser diode includes a p-type cladding layer formed on an active layer such that an inclined surface region thereof has a carrier concentration level of 1null1018 cmnull3 or more, wherein the p-type cladding layer has a thickness of 0.35 nullm or more.

摘要翻译： S3型激光二极管包括形成在有源层上的p型覆层，使得其倾斜表面区域的载流子浓度水平为1×10 18 cm -3以上，其中p型覆层的厚度为0.35 妈妈还是更多