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    Method and material for processing iron disilicide for photovoltaic application
    5.
    发明授权
    Method and material for processing iron disilicide for photovoltaic application 失效
    光伏应用二氧化硅加工方法和材料

    公开(公告)号：US08247257B2

    公开(公告)日：2012-08-21

    申请号：US13267239

    申请日：2011-10-06

    申请人： Howard W. H. Lee ,  Frederic Victor Mikulec ,  Bing Shen Gao ,  Jinman Huang

    发明人： Howard W. H. Lee ,  Frederic Victor Mikulec ,  Bing Shen Gao ,  Jinman Huang

    IPC分类号： H01L21/00 ,  H01L21/44

    CPC分类号： H01L31/0384 ,  C01B33/06 ,  C23C24/08 ,  C23C26/00 ,  H01L31/032

    摘要： A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.

    摘要翻译： 一种用于提供用于光伏器件的半导体材料的方法，所述方法包括提供包含大约90％或更大的β相实体的二硅化铁样品。 二硅化铁的样品的特征在于约1微米至约10微米的基本均匀的第一粒度。 该方法包括将二硅化铁样品与结合材料组合以形成材料的混合物。 该方法包括提供包括表面区域的衬底构件并沉积覆盖衬底的表面区域的材料混合物。 在具体实施方案中，材料的混合物经历诸如固化过程的后沉积工艺，以形成包含覆盖在基底构件上的二硅化铁样品的材料的厚度。 在具体实施例中，材料的厚度的特征在于约为第一粒度的厚度。

    METHOD AND MATERIAL FOR PROCESSING IRON DISILICIDE FOR PHOTOVOLTAIC APPLICATION
    6.
    发明申请
    METHOD AND MATERIAL FOR PROCESSING IRON DISILICIDE FOR PHOTOVOLTAIC APPLICATION 失效
    用于光伏应用的加工铁氰化物的方法和材料

    公开(公告)号：US20120028405A1

    公开(公告)日：2012-02-02

    申请号：US13267239

    申请日：2011-10-06

    申请人： Howard W.H. Lee ,  Frederic Victor Mikulec ,  Bing Shen Gao ,  Jinman Huang

    发明人： Howard W.H. Lee ,  Frederic Victor Mikulec ,  Bing Shen Gao ,  Jinman Huang

    IPC分类号： H01L31/0264

    CPC分类号： H01L31/0384 ,  C01B33/06 ,  C23C24/08 ,  C23C26/00 ,  H01L31/032

    摘要： A method for providing a semiconductor material for photovoltaic devices, the method includes providing a sample of iron disilicide comprising approximately 90 percent or greater of a beta phase entity. The sample of iron disilicide is characterized by a substantially uniform first particle size ranging from about 1 micron to about 10 microns. The method includes combining the sample of iron disilicide and a binding material to form a mixture of material. The method includes providing a substrate member including a surface region and deposits the mixture of material overlying the surface region of the substrate. In a specific embodiment, the mixture of material is subjected to a post-deposition process such as a curing process to form a thickness of material comprising the sample of iron disilicide overlying the substrate member. In a specific embodiment, the thickness of material is characterized by a thickness of about the first particle size.

    摘要翻译： 一种用于提供用于光伏器件的半导体材料的方法，所述方法包括提供包含大约90％或更大的β相实体的二硅化铁样品。 二硅化铁的样品的特征在于约1微米至约10微米的基本均匀的第一粒度。 该方法包括将二硅化铁样品与结合材料组合以形成材料的混合物。 该方法包括提供包括表面区域的衬底构件并沉积覆盖衬底的表面区域的材料混合物。 在具体实施方案中，材料的混合物经历诸如固化过程的后沉积工艺，以形成包含覆盖在基底构件上的二硅化铁样品的材料的厚度。 在具体实施例中，材料的厚度的特征在于约为第一粒度的厚度。