摘要:
A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 μs, the polyurethane-polyurea resin foam has a storage elastic modulus E′ of 1 to 30 MPa, the storage elastic modulus E′ being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.
摘要:
Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r−1)×(Mdi+Mda)÷(Mg+r×Mdi+(r−1)×Mda) (1).
摘要:
Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.
摘要:
A package of polyurethane elastic yarn for heat bonding which weighs more than 1 kg and measures such that the diameter-to-width ratio is greater than 0.5 and which is obtained from polyurethane elastic yarn by giving it 3.0-10.0 wt % of a finishing agent and then winding it up, said finishing agent is polypropylene glycol-based polyol used alone or composed of component (A) which is a polypropylene glycol-based polyol and component (B) which is a reaction product of a polypropylene glycol-based polyol and an organic diisocyanate compound. The finishing agent contains component (B) in an amount less than 30 wt % and have an apparent viscosity of 50-250 mPa·s at 30° C. and a surface tension of 30-45 dyn/cm.
摘要:
When channel setup is carried out under poor receiving condition, the previous channel information that has been stored on a channel map in the channel setup carried out under normal receiving condition is replaced with the later channel information that is stored on the channel map including less acquired channel information formed in the channel setup carried out later. Existence of broadcast signal is judged only on channels other than channels that are registered based on the fact that the channels include a broadcast signal on a channel map stored in the previous channel setup, and the channel information of the broadcast signal detected later is registered additionally on the channel map in a flash memory as the channel including the broadcast signal.
摘要:
Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.
摘要:
A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 μs, the polyurethane-polyurea resin foam has a storage elastic modulus E′ of 1 to 30 MPa, the storage elastic modulus E′ being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.
摘要:
Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r−1)×(Mdi+Mda)÷(Mg+r×Mdi+(r−1)×Mda) (1).
摘要:
The present invention relates to a method for separating and concentrating acidic peptide, especially phosphopeptide having a phosphoserine residue, from a peptide mixture prepared by digesting casein with protease.