公开(公告)号：US20060107890A1

公开(公告)日：2006-05-25

申请号：US11248458

申请日：2005-10-12

Applicant: Hudson Hobgood ,  Jason Jenny ,  David Malta ,  Valeri Tsvetkov ,  Calvin Carter ,  Robert Leonard ,  George Fechko

Inventor： Hudson Hobgood ,  Jason Jenny ,  David Malta ,  Valeri Tsvetkov ,  Calvin Carter ,  Robert Leonard ,  George Fechko

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  C30B33/00 ,  H01L21/324 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1016 ,  Y10T428/21 ,  Y10T428/31

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

Abstract translation: 公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。 该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差 跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。

公开(公告)号：US20060213430A1

公开(公告)日：2006-09-28

申请号：US11248579

申请日：2005-10-12

Applicant: Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Stephan Mueller ,  Mark Brady ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  George Fechko ,  Calvin Carter

Inventor： Jason Jenny ,  David Malta ,  Hudson Hobgood ,  Stephan Mueller ,  Mark Brady ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  George Fechko ,  Calvin Carter

IPC: C30B23/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B23/00 ,  C30B23/025 ,  C30B29/36 ,  C30B33/00 ,  H01L21/324

Abstract: A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Abstract translation: 公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热 晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。

公开(公告)号：US20050022727A1

公开(公告)日：2005-02-03

申请号：US10628188

申请日：2003-07-28

Applicant: George Fechko ,  Jason Jenny ,  Hudson Hobgood ,  Valeri Tsvetkov ,  Calvin Carter

Inventor： George Fechko ,  Jason Jenny ,  Hudson Hobgood ,  Valeri Tsvetkov ,  Calvin Carter

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

Abstract: The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Abstract translation: 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢的环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。