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公开(公告)号：US20060213430A1
公开(公告)日：2006-09-28
申请号：US11248579
申请日：2005-10-12
申请人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov , George Fechko , Calvin Carter
发明人： Jason Jenny , David Malta , Hudson Hobgood , Stephan Mueller , Mark Brady , Robert Leonard , Adrian Powell , Valeri Tsvetkov , George Fechko , Calvin Carter
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/324
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译： 公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热 晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。
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公开(公告)号：US20060107890A1
公开(公告)日：2006-05-25
申请号：US11248458
申请日：2005-10-12
申请人： Hudson Hobgood , Jason Jenny , David Malta , Valeri Tsvetkov , Calvin Carter , Robert Leonard , George Fechko
发明人： Hudson Hobgood , Jason Jenny , David Malta , Valeri Tsvetkov , Calvin Carter , Robert Leonard , George Fechko
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.
摘要翻译： 公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。 该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差 跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。
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公开(公告)号：US20080067524A1
公开(公告)日：2008-03-20
申请号：US11854878
申请日：2007-09-13
申请人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
发明人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02631 , H01L21/02634 , Y10T428/21
摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
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公开(公告)号：US20080083366A1
公开(公告)日：2008-04-10
申请号：US11854864
申请日：2007-09-13
申请人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
发明人： Cem Basceri , Yuri Khlebnikov , Igor Khlebnikov , Cengiz Balkas , Murat Silan , Hudson Hobgood , Calvin Carter , Vijay Balakrishna , Robert Leonard , Adrian Powell , Valeri Tsvetkov , Jason Jenny
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02631 , H01L21/02634 , Y10T428/21
摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
摘要翻译： 公开了无微波，单晶，碳化硅（SiC）和相关制造方法。 通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。 通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性， 在种子材料上生长游离的SiC晶体。
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5.发明申请Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient 有权通过在含氢环境中升华生长来还原碳化硅晶体中的氮含量公开(公告)号：US20050022727A1
公开(公告)日：2005-02-03
申请号：US10628188
申请日：2003-07-28
申请人： George Fechko , Jason Jenny , Hudson Hobgood , Valeri Tsvetkov , Calvin Carter
发明人： George Fechko , Jason Jenny , Hudson Hobgood , Valeri Tsvetkov , Calvin Carter
CPC分类号： C30B23/005 , C30B23/002 , C30B29/36 , Y10S117/906
摘要： The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.
摘要翻译： 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢的环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。
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6.发明申请公开(公告)号：US20060130742A1
公开(公告)日：2006-06-22
申请号：US11052679
申请日：2005-02-07
申请人： Calvin Carter , Jason Jenny , David Malta , Hudson Hobgood , Valeri Tsvetkov , Mrinal Das
发明人： Calvin Carter , Jason Jenny , David Malta , Hudson Hobgood , Valeri Tsvetkov , Mrinal Das
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
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7.发明申请Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby 有权使用由坯形生长的碳化硅漂移层和由此形成的功率半导体器件形成功率半导体器件的方法公开(公告)号：US20050082542A1
公开(公告)日：2005-04-21
申请号：US10686795
申请日：2003-10-16
申请人： Joseph Sumakeris , Hudson Hobgood , Michael Paisley , Jason Jenny , Calvin Carter , Valeri Tsvetkov
发明人： Joseph Sumakeris , Hudson Hobgood , Michael Paisley , Jason Jenny , Calvin Carter , Valeri Tsvetkov
IPC分类号： C30B29/36 , C30B31/20 , H01L21/04 , H01L29/24 , H01L29/739 , H01L29/78 , H01L29/808 , H01L29/861 , H01L29/868 , H01L31/0312
CPC分类号： H01L29/7813 , C30B29/36 , C30B31/20 , H01L21/0455 , H01L29/6606 , H01L29/66068 , H01L29/8083 , H01L29/861 , H01L29/868
摘要： Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm−3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.
摘要翻译： 形成高压碳化硅功率器件的方法利用从高纯度碳化硅晶片材料得到的高纯度碳化硅漂移层，而不是昂贵的外延生长碳化硅层。 这些方法包括使用厚度大于约100um的漂移层来形成可支持大于10kV阻断电压的少数载流子和多数载流子功率器件。 漂移层形成为其中具有小于约2×10 15 cm -3的净n型掺杂剂浓度的双晶生长碳化硅漂移层。 这些n型掺杂剂浓度可以使用中子转换掺杂（NTD）技术来实现。
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公开(公告)号：US20050116234A1
公开(公告)日：2005-06-02
申请号：US11022520
申请日：2004-12-22
申请人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
发明人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
IPC分类号： H01L29/24 , H01L29/732 , H01L29/744 , H01L29/861 , H01L29/15
CPC分类号： H01L29/1608 , C30B19/00 , C30B23/002 , C30B25/02 , C30B29/36 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/744 , H01L29/861
摘要： A bipolar device has at least one p−type layer of single crystal silicon carbide and at least one n−type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
摘要翻译： 双极器件具有至少一个单晶碳化硅的p型层和至少一个n型单晶碳化硅层，其中在正向操作下生长的那些堆垛层错的那些部分与至少一个 活动区域和设备的其余部分之间的接口。
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公开(公告)号：US20070117336A1
公开(公告)日：2007-05-24
申请号：US11560575
申请日：2006-11-16
申请人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
发明人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
IPC分类号： C30B29/36 , H01L21/331
CPC分类号： H01L29/1608 , C30B19/00 , C30B23/002 , C30B25/02 , C30B29/36 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/744 , H01L29/861
摘要： A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.
摘要翻译： 形成双极性器件的方法包括在衬底上形成至少一个单晶碳化硅的p型层和至少一个单晶碳化硅n型层。 在设备的正向操作下生长的堆叠故障与活动区域和设备的其余部分之间的至少一个接口分离。 形成双极器件的方法包括将至少一个外延层生长至大于该层中的少数载流子扩散长度的厚度。 该方法还增加了漂移区周围的外延层的掺杂浓度，以减少其中的少数载流子寿命。
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公开(公告)号：US20050118746A1
公开(公告)日：2005-06-02
申请号：US11022544
申请日：2004-12-22
申请人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
发明人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
IPC分类号： H01L29/24 , H01L29/732 , H01L29/744 , H01L29/861 , H01L29/15 , H01L21/00
CPC分类号： H01L29/1608 , C30B19/00 , C30B23/002 , C30B25/02 , C30B29/36 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/744 , H01L29/861
摘要： A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.
摘要翻译： 形成双极性器件的方法包括在衬底上形成至少一个单晶碳化硅的p型层和至少一个单晶碳化硅n型层。 在设备的正向操作下生长的堆叠故障与活动区域和设备的其余部分之间的至少一个接口分离。 形成双极器件的方法包括将至少一个外延层生长至大于该层中的少数载流子扩散长度的厚度。 该方法还增加了漂移区周围的外延层的掺杂浓度，以减少其中的少数载流子寿命。
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