公开(公告)号：US08841006B2

公开(公告)日：2014-09-23

申请号：US12658853

申请日：2010-02-16

申请人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

发明人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

IPC分类号： G11C11/02 ,  H01F10/32 ,  H01F10/14 ,  G11C11/15 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/30 ,  H01L43/10 ,  H01L43/12 ,  G01R33/09 ,  H01F10/12

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/14 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10 ,  Y10T428/115

摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。

公开(公告)号：US20110045320A1

公开(公告)日：2011-02-24

申请号：US12658853

申请日：2010-02-16

申请人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

发明人： Gyung-Min Choi ,  Byoung Chul Min ,  Kyung Ho Shin

IPC分类号： G11B5/706 ,  H01F1/01

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/091 ,  G01R33/098 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/14 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/10 ,  Y10T428/115

摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。

公开(公告)号：US08319297B2

公开(公告)日：2012-11-27

申请号：US12897914

申请日：2010-10-05

申请人： Byoung Chul Min ,  Gyung Min Choi ,  Kyung Ho Shin

发明人： Byoung Chul Min ,  Gyung Min Choi ,  Kyung Ho Shin

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286

摘要： Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.

摘要翻译： 公开了具有垂直各向异性自由层的磁性隧道结结构，并且可以通过保持自由磁化的磁化方向来实现减小切换和保持热稳定性所需的临界电流值，即使器件制造尺寸较小 层和固定磁性层构成彼此垂直的磁性隧道结结构。

公开(公告)号：US20110089508A1

公开(公告)日：2011-04-21

申请号：US12897914

申请日：2010-10-05

申请人： Byoung Chul MIN ,  Gyung Min CHOI ,  Kyung Ho SHIN

发明人： Byoung Chul MIN ,  Gyung Min CHOI ,  Kyung Ho SHIN

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286

摘要： Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.

摘要翻译： 公开了具有垂直各向异性自由层的磁性隧道结结构，并且可以通过保持自由磁化的磁化方向来实现减小切换和保持热稳定性所需的临界电流值，即使器件制造尺寸较小 层和固定磁性层构成彼此垂直的磁性隧道结结构。