LUMINESCENCE DIODE CHIP
    2.
    发明申请
    LUMINESCENCE DIODE CHIP 有权
    发光二极管芯片

    公开(公告)号:US20110215369A1

    公开(公告)日:2011-09-08

    申请号:US13124145

    申请日:2009-10-16

    IPC分类号: H01L33/62

    摘要: A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.

    摘要翻译: 发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。 第一电连接层特别地与多个接触区域接触并与半导体层序列接触。 在发光二极管芯片的情况下,通过沿着主要平面的接触区域的面积密度的不均匀分布,在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布 半导体层序列。

    Luminescence diode chip
    3.
    发明授权
    Luminescence diode chip 有权
    发光二极管芯片

    公开(公告)号:US08436394B2

    公开(公告)日:2013-05-07

    申请号:US13124145

    申请日:2009-10-16

    IPC分类号: H01L33/62

    摘要: A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.

    摘要翻译: 发光二极管芯片包括具有适于产生电磁辐射的有源层的半导体层序列以及接触并与半导体层序列导电接触的第一电连接层。 第一电连接层特别地与多个接触区域接触并与半导体层序列接触。 在发光二极管芯片的情况下,通过沿着主要平面的接触区域的面积密度的不均匀分布,在半导体层序列中以目标方式设定不均匀的电流密度分布或电流分布 半导体层序列。