公开(公告)号：US6043106A

公开(公告)日：2000-03-28

申请号：US118691

申请日：1998-07-16

申请人： Mark J. Mescher ,  Ralph B. James ,  Tuviah E. Schlesinger ,  Haim Hermon

发明人： Mark J. Mescher ,  Ralph B. James ,  Tuviah E. Schlesinger ,  Haim Hermon

IPC分类号： H01L21/465 ,  C23F1/00

CPC分类号： H01L21/465

摘要： A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

摘要翻译： 一种降低CZT晶体，特别是Cd1-xZnxTe晶体（其中x大于等于零且小于或等于0.5）的漏电流的方法，优选为Cd0.9Zn0.1Te晶体，从而提高了这些晶体的能力 光谱地解决各种放射性核素的放射性排放。 公开了两个过程。 第一种方法提供了通过反应溅射沉积氮化硅硬涂层覆盖层，其提供了显着降低的表面泄漏电流。 第二种方法通过在氮化硅沉积之前用氧等离子体氧化CZT表面而不破坏真空状态来增强钝化。

公开(公告)号：US07170065B2

公开(公告)日：2007-01-30

申请号：US10653190

申请日：2003-09-03

申请人： Ofer Dagan ,  Barry Neal Breen ,  Haim Hermon ,  Robert A. Street

发明人： Ofer Dagan ,  Barry Neal Breen ,  Haim Hermon ,  Robert A. Street

IPC分类号： G01T1/24

CPC分类号： G01T1/247

摘要： A method for detecting single photons of high energy radiation using a detector comprising an array of pixels, each pixel including a charge receptive substrate. The method includes the operations of capturing high energy photons with the pixel array, collecting the charges generated in each pixel by the charge receptive substrate of that pixel, reading out the collected charges and analyzing the read out charges. In addition, a system for detecting single photons of high energy radiation is described. The system includes a pixel array in which each pixel includes a polycrystalline photoconductive film deposited on a charge receptive substrate. The system further includes low noise electronics for reading out the charges generated by high energy photons when the latter interact with the film. Additionally, the system includes a data processor in communication with the low noise electronics.

摘要翻译： 一种使用包括像素阵列的检测器来检测高能量辐射的单个光子的方法，每个像素包括电荷接收衬底。 该方法包括捕获具有像素阵列的高能光子的操作，通过该像素的电荷接收衬底收集在每个像素中产生的电荷，读出收集的电荷并分析读出的电荷。 另外，还描述了一种用于检测高能辐射单光子的系统。 该系统包括其中每个像素包括沉积在电荷接受衬底上的多晶光电导膜的像素阵列。 该系统还包括低噪声电子器件，用于读取当高分子光子与胶片相互作用时由高能量光子产生的电荷。 此外，该系统包括与低噪声电子设备通信的数据处理器。

公开(公告)号：US20050118527A1

公开(公告)日：2005-06-02

申请号：US10481192

申请日：2002-02-18

申请人： Ze'ev Harel ,  Michael Schieber ,  Yehezkei Saado ,  Evgeny Meerson ,  Haim Hermon ,  Benjamin Reisman

发明人： Ze'ev Harel ,  Michael Schieber ,  Yehezkei Saado ,  Evgeny Meerson ,  Haim Hermon ,  Benjamin Reisman

IPC分类号： G01T1/24 ,  H01L27/146 ,  H01L31/0296 ,  G03C1/76

CPC分类号： G01T1/24 ,  H01L27/14658 ,  H01L31/0296

摘要： An imaging composition for radiation detection systems which includes an admixture of at least one non-heat treated, non-ground particulate semiconductor with a polymeric binder. The non-heat treated, non-ground particulate semiconductor is selected from mercuric iodide, lead iodide, bismuth iodide, thallium bromide and cadmium-zinc-telluride (CZT), and at least 90% of the semiconductor particulates have a grain size of less than 100 microns in their largest dimension. A radiation detector plate (10) for an imaging system includes a substrate (12) which serves as an electrode, at least one imaging composition layer (16) applied onto the substrate (12), and a second electrode (18) which is in electrical connection with the imaging composition (16) and connected (20, 22) to a high voltage bias.

摘要翻译： 一种用于放射线检测系统的成像组合物，其包括至少一种非热处理的非研磨颗粒半导体与聚合物粘合剂的混合物。 非热处理的未研磨颗粒半导体选自碘化汞，碘化铅，碘化铋，溴化铊和碲化镉碲化物（CZT），并且至少90％的半导体颗粒具有较小的晶粒尺寸 其尺寸超过100微米。 用于成像系统的辐射检测器板（10）包括用作电极的基底（12），施加到基底（12）上的至少一个成像组合物层（16）和位于基底 与成像组合物（16）电连接并连接（20,22）至高电压偏压。

公开(公告)号：US06821714B1

公开(公告)日：2004-11-23

申请号：US09712082

申请日：2000-11-13

申请人： Mark J. Mescher ,  Ralph B. James ,  Haim Hermon

发明人： Mark J. Mescher ,  Ralph B. James ,  Haim Hermon

IPC分类号： G03F700

CPC分类号： H01L31/085 ,  G03F7/09 ,  G03F7/11

摘要： A photolithographic process forms patterns on HgI2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI2 surfaces and for producing trenches in HgI2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

摘要翻译： 光刻工艺在HgI2表面上形成图案，并且通过增加可实现的设计空间来限定金属升华掩模和电极，以显着提高器件性能。 提供了平滑HgI2表面和在HgI2中产生沟槽的技术。 描述了产生具有增强的仅电子传输行为的蚀刻沟槽器件的升华过程。