公开(公告)号：US6043106A

公开(公告)日：2000-03-28

申请号：US118691

申请日：1998-07-16

申请人： Mark J. Mescher ,  Ralph B. James ,  Tuviah E. Schlesinger ,  Haim Hermon

发明人： Mark J. Mescher ,  Ralph B. James ,  Tuviah E. Schlesinger ,  Haim Hermon

IPC分类号： H01L21/465 ,  C23F1/00

CPC分类号： H01L21/465

摘要： A method for reducing the leakage current in CZT crystals, particularly Cd.sub.1-x Zn.sub.x Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd.sub.0.9 Zn.sub.0.1 Te crystals, thereby enhancing the ability of these crystal to spectrally resolve radiological emissions from a wide variety of radionuclides. Two processes are disclosed. The first method provides for depositing, via reactive sputtering, a silicon nitride hard-coat overlayer which provides significant reduction in surface leakage currents. The second method enhances the passivation by oxidizing the CZT surface with an oxygen plasma prior to silicon nitride deposition without breaking the vacuum state.

摘要翻译： 一种降低CZT晶体，特别是Cd1-xZnxTe晶体（其中x大于等于零且小于或等于0.5）的漏电流的方法，优选为Cd0.9Zn0.1Te晶体，从而提高了这些晶体的能力 光谱地解决各种放射性核素的放射性排放。 公开了两个过程。 第一种方法提供了通过反应溅射沉积氮化硅硬涂层覆盖层，其提供了显着降低的表面泄漏电流。 第二种方法通过在氮化硅沉积之前用氧等离子体氧化CZT表面而不破坏真空状态来增强钝化。

公开(公告)号：US06821714B1

公开(公告)日：2004-11-23

申请号：US09712082

申请日：2000-11-13

申请人： Mark J. Mescher ,  Ralph B. James ,  Haim Hermon

发明人： Mark J. Mescher ,  Ralph B. James ,  Haim Hermon

IPC分类号： G03F700

CPC分类号： H01L31/085 ,  G03F7/09 ,  G03F7/11

摘要： A photolithographic process forms patterns on HgI2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI2 surfaces and for producing trenches in HgI2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.

摘要翻译： 光刻工艺在HgI2表面上形成图案，并且通过增加可实现的设计空间来限定金属升华掩模和电极，以显着提高器件性能。 提供了平滑HgI2表面和在HgI2中产生沟槽的技术。 描述了产生具有增强的仅电子传输行为的蚀刻沟槽器件的升华过程。

公开(公告)号：US5641392A

公开(公告)日：1997-06-24

申请号：US504001

申请日：1995-07-19

申请人： Ralph B. James ,  John M. Van Scyoc, III ,  Tuviah E. Schlesinger

发明人： Ralph B. James ,  John M. Van Scyoc, III ,  Tuviah E. Schlesinger

IPC分类号： C01G13/04 ,  C01G15/00 ,  C01G21/16 ,  C25F1/00

CPC分类号： C01G15/00 ,  C01G13/04 ,  C01G21/16

摘要： A method of purifying nonmetallic, crystalline semiconducting materials useful for room temperature radiation detecting devices by applying an electric field across the material. The present invention discloses a simple technology for producing purified ionic semiconducting materials, in particular PbI.sub.2 and preferably HgI.sub.2, which produces high yields of purified product, requires minimal handling of the material thereby reducing the possibility of introducing or reintroducing impurities into the material, is easy to control, is highly selective for impurities, retains the stoichiometry of the material and employs neither high temperatures nor hazardous materials such as solvents or liquid metals. An electric field is applied to a bulk sample of the material causing impurities present in the sample to drift in a preferred direction. After all of the impurities have been transported to the ends of the sample the current flowing through the sample, a measure of the rate of transport of mobile impurities, falls to a low, steady state value, at which time the end sections of the sample where the impurities have concentrated are removed leaving a bulk sample of higher purity material. Because the method disclosed here only acts on the electrically active impurities, the stoichiometry of the host material remains substantially unaffected.

摘要翻译： 一种通过在整个材料上施加电场来净化用于室温辐射检测装置的非金属，晶体半导体材料的方法。 本发明公开了一种用于生产纯化的离子半导体材料的简单技术，特别是产生高产率的纯化产物的PbI 2，优选HgI 2，需要对材料进行最少的处理，从而减少将杂质引入或再引入材料的可能性是容易的 为了控制，对杂质是高选择性的，保留了材料的化学计量，既不使用高温也不使用有害物质，如溶剂或液态金属。 将电场施加到材料的大量样品，导致样品中存在的杂质沿优选的方向漂移。 在将所有杂质运送到样品的末端之后，流过样品的电流（移动杂质的运输速率的量度）降至低的稳态值，此时样品的末端部分 其中杂质浓缩的物质被除去，留下较高纯度材料的大量样品。 因为这里公开的方法仅作用于电活性杂质，所以主体材料的化学计量基本上不受影响。

公开(公告)号：US06524966B1

公开(公告)日：2003-02-25

申请号：US09536883

申请日：2000-03-28

申请人： Gomez W. Wright ,  Ralph B. James ,  Arnold Burger ,  Douglas A. Chinn

发明人： Gomez W. Wright ,  Ralph B. James ,  Arnold Burger ,  Douglas A. Chinn

IPC分类号： H01L21302

CPC分类号： H01L21/465

摘要： A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.

公开(公告)号：US09335423B2

公开(公告)日：2016-05-10

申请号：US14129091

申请日：2012-06-29

申请人： Aleksey E. Bolotnikov ,  Gianluigi De Geronimo ,  Emerson Vernon ,  Ge Yang ,  Giuseppe Camarda ,  Yonggang Cui ,  Anwar Hossain ,  Ki Hyun Kim ,  Ralph B. James

发明人： Aleksey E. Bolotnikov ,  Gianluigi De Geronimo ,  Emerson Vernon ,  Ge Yang ,  Giuseppe Camarda ,  Yonggang Cui ,  Anwar Hossain ,  Ki Hyun Kim ,  Ralph B. James

IPC分类号： G01T1/17 ,  G01T1/24

CPC分类号： G01T1/17 ,  G01T1/247

摘要： A radiation detector device is provided that is capable of distinguishing between full charge collection (FCC) events and incomplete charge collection (ICC) events based upon a correlation value comparison algorithm that compares correlation values calculated for individually sensed radiation detection events with a calibrated FCC event correlation function. The calibrated FCC event correlation function serves as a reference curve utilized by a correlation value comparison algorithm to determine whether a sensed radiation detection event fits the profile of the FCC event correlation function within the noise tolerances of the radiation detector device. If the radiation detection event is determined to be an ICC event, then the spectrum for the ICC event is rejected and excluded from inclusion in the radiation detector device spectral analyses. The radiation detector device also can calculate a performance factor to determine the efficacy of distinguishing between FCC and ICC events.

摘要翻译： 提供了一种能够基于相关值比较算法区分完全电荷收集（FCC）事件和不完全电荷收集（ICC）事件的辐射检测器装置，该相关值比较算法将针对单独感测的放射线检测事件计算的相关值与经校准的FCC事件 相关函数。 校准的FCC事件相关函数用作相关值比较算法使用的参考曲线，以确定感测的辐射检测事件是否符合辐射检测器装置的噪声容限内的FCC事件相关函数的轮廓。 如果辐射检测事件被确定为ICC事件，则ICC事件的频谱被拒绝并被排除在包括在辐射检测器装置频谱分析中。 辐射检测装置还可以计算性能因素，以确定区分FCC和ICC事件的功效。

公开(公告)号：US20120039446A1

公开(公告)日：2012-02-16

申请号：US13262811

申请日：2010-03-31

申请人： Yonggang Cui ,  Ralph B. James

发明人： Yonggang Cui ,  Ralph B. James

IPC分类号： G21K1/02

CPC分类号： G21K1/025 ,  A61B6/037 ,  A61B6/06 ,  A61B6/4258 ,  A61B6/4291

摘要： An interwoven multi-aperture collimator for three-dimension radiation imaging applications is disclosed. The collimator comprises a collimator body including a plurality of apertures disposed in a two-dimensional grid. The collimator body is configured to absorb and collimate radiation beams emitted from a radiation source within a field of view of said collimator. The collimator body has a surface plane disposed closest to the radiation source. The two-dimensional grid is selectively divided into at least a first and a second group of apertures, respectively defining at least a first view and a second view of an object to be imaged. The first group of apertures is formed by interleaving or alternating rows of the grid, and the second group of apertures is formed by the rows of apertures adjacent to the rows of the first group. Each aperture in the first group is arranged in a first orientation angle with respect to the surface plane of said collimator body, and each aperture in the second group is arranged in a second orientation angle with respect to the surface plane of said collimator body such that the apertures of the first group are interwoven with the apertures of the second group.

摘要翻译： 公开了一种用于三维辐射成像应用的交织多孔准直器。 准直器包括准直器主体，该准直器主体包括设置在二维网格中的多个孔。 准直器本体被配置为吸收和准直在所述准直仪的视场内从辐射源发射的辐射束。 准直器主体具有最靠近辐射源设置的表面平面。 二维网格选择性地分成至少第一组和第二组孔，分别限定待成像对象的至少第一视图和第二视图。 第一组孔径通过交错或交替排列的栅格而形成，第二组孔由与第一组的行相邻的孔排形成。 第一组中的每个孔相对于所述准直器主体的表面平面以第一取向角度布置，并且第二组中的每个孔相对于所述准直仪主体的表面平面布置成第二取向角，使得 第一组的孔与第二组的孔交织。

公开(公告)号：US06344650B1

公开(公告)日：2002-02-05

申请号：US09298111

申请日：1999-04-23

申请人： Edwin Y. Lee ,  Ralph B. James

发明人： Edwin Y. Lee ,  Ralph B. James

IPC分类号： G01T124

CPC分类号： H01L31/115 ,  H01L31/0296 ,  H01L31/02966

摘要： An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the “electron-only” semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

摘要翻译： 描述了可用于伽马射线和x射线光谱仪和成像系统的电子气体网格半导体辐射检测器（EGGSRAD）。 辐射检测器采用半导体的掺杂和半导体检测器材料的变化形成二维电子气，并允许晶体管在检测器内作用。 该辐射检测器提供超过常规半导体辐射检测器和利用靠近阳极的栅电极的“仅电子”半导体辐射检测器的优异的能量分辨率和辐射检测灵敏度。 在第一实施例中，EGGSRAD包括与阳极相邻的δ-掺杂层，其产生内部自由电子栅格阱，外部栅极可附接到该内部自由电子栅极阱。 在第二实施例中，在两个δ-掺杂层之间形成量子阱，并且量子阱形成内部自由电子气体栅格，外部栅极可以连接到其上。 类似于第一和第二实施例的两个其它实施例涉及通过改变在第一和最后的三角形掺杂层附近的半导体材料的组成而增加或减少邻近δ掺杂的导带能量而形成的渐变带隙 层。

公开(公告)号：US08586936B2

公开(公告)日：2013-11-19

申请号：US13099001

申请日：2011-05-02

申请人： Ge Yang ,  Aleksey E. Bolotnikov ,  Giuseppe Camarda ,  Yonggang Cui ,  Anwar Hossain ,  Ki Hyun Kim ,  Ralph B. James

发明人： Ge Yang ,  Aleksey E. Bolotnikov ,  Giuseppe Camarda ,  Yonggang Cui ,  Anwar Hossain ,  Ki Hyun Kim ,  Ralph B. James

IPC分类号： H01L27/146 ,  G01T1/24 ,  G01T5/06 ,  H01L27/14

CPC分类号： G01T1/241 ,  H01L31/085

摘要： The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

摘要翻译： 本发明涉及一种用于放射线检测器的新型混合阳极配置，其通过聚焦检测器的内部电场并将偏移载流子从侧表面重新定向，从而有效地减少化合物半导体检测器中的内部电场上的表面缺陷的边缘效应 的半导体朝向收集电极。

公开(公告)号：US07758843B1

公开(公告)日：2010-07-20

申请号：US12416224

申请日：2009-04-01

申请人： Aleskey E. Bolotnikov ,  Ralph B. James

发明人： Aleskey E. Bolotnikov ,  Ralph B. James

IPC分类号： C01B19/00 ,  C01B19/04

CPC分类号： C01B19/002 ,  C01B19/001 ,  C30B9/06 ,  C30B29/48 ,  Y10S977/813 ,  Y10S977/824

摘要： The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

摘要翻译： 本公开提供了具有倒置生长反应器室的镉锌碲（CZT）和碲化镉（CdTe）晶体的晶体生长的系统和方法。 反转生长反应器室能够生长可用于例如X射线和γ检测的红外检测器等的单个，大，高纯度的CZT和CdTe晶体。 反向生长反应器室能够减少Te夹杂物的存在，这被认为是使用CZT或CdTe作为辐射探测器的重要限制因素。 反向生长反应器室可以与现有的晶体生长技术一起使用，例如Br​​idgman晶体生长机理等。 在一个示例性实施方案中，反转生长反应器室是U形安瓿。

公开(公告)号：US06373064B1

公开(公告)日：2002-04-16

申请号：US09233364

申请日：1999-01-19

申请人： H. Walter Yao ,  Ralph B. James

发明人： H. Walter Yao ,  Ralph B. James

IPC分类号： G01T124

CPC分类号： H01L27/14665

摘要： An improved semiconductor radiation detector which involves engineering the internal electrical field through an external infrared light source. A planar semiconductor radiation detector is applied with a bias voltage, and an optical light beam with a selected photon energy is used to illuminate the detector and engineer the internal electric field. Different light beam intensities or photon energies produce different distributions of the internal electric field. The width of the electric field can be fine-tuned by changing the optical beam intensity and wavelength, so that the radiation detector performance can be optimized. The detector is portable, small in size, and operates at room temperature.

摘要翻译： 一种改进的半导体辐射检测器，其涉及通过外部红外光源工程化内部电场。 平面半导体辐射检测器被施加偏置电压，并且使用具有选定光子能量的光束照射检测器并工程化内部电场。 不同的光束强度或光子能量产生内部电场的不同分布。 可以通过改变光束强度和波长来微调电场的宽度，从而可以优化辐射探测器的性能。 检测器便携，体积小，在室温下工作。