公开(公告)号：US4839607A

公开(公告)日：1989-06-13

申请号：US245371

申请日：1988-09-16

申请人： Helmut Schink

发明人： Helmut Schink

IPC分类号： H03H9/25 ,  H03B19/00 ,  H03H3/08

CPC分类号： H03B19/00 ,  H03B2200/0022

摘要： An amplifying surface wave receiver for a surface wave element composed of a material which has the piezo effect and which can be rendered electrically conductive by local doping wherein a doped region is formed at the upper portion of an insulating substrate body (8) which forms the surface wave element and said doped region forms a conductive channel (7) between at least two contact electrodes (3, 3') which have a defined distance from each other and in the channel thus formed the occurring piezo charges are positioned so as to modulate the conductivity of the channel. One pole terminal of a voltage source (4) is connected to one of the contact electrodes (3) and the other pole terminal is connected to the other contact electrode (3') through an alternating current detector (5).

摘要翻译： 一种用于表面波元件的放大表面波接收器，其由具有压电效应的材料构成，并且可以通过局部掺杂而导电，其中掺杂区形成在形成绝缘衬底的绝缘衬底本体（8）的上部， 表面波元件和所述掺杂区域在至少两个接触电极（3,3'）之间形成导电通道（7），所述至少两个接触电极（3,3'）具有彼此限定的距离，并且在如此形成的通道中，所发生的压电电荷被定位成调制 通道的电导率。 电压源（4）的一极端子连接到一个接触电极（3），另一个极端子通过交流电流检测器（5）连接到另一个接触电极（3'）。

公开(公告)号：US4609867A

公开(公告)日：1986-09-02

申请号：US513763

申请日：1983-07-14

申请人： Helmut Schink

发明人： Helmut Schink

IPC分类号： G01R31/26 ,  G01Q30/02 ,  G01R31/265 ,  G01R31/302 ,  H01L21/66

CPC分类号： G01R31/265

摘要： A method is provided for measuring electrical potentials at solid state matter wherein an ionizing radiation is directed against a measuring point at the surface, whereby a conductive connection between the measuring point at the surface and a measuring point at the solid state matter is produced, its electrical potential to be measured. Electrical potentials are measured at a solid state substance even when the solid state matter is hidden beneath at least one conductive layer and at least one insulating layer. The electrical potential at the solid state matter is identified by measuring induced specimen current.

摘要翻译： 提供了一种用于测量固体物质电位的方法，其中电离辐射指向表面处的测量点，由此产生表面上的测量点与固态物质的测量点之间的导电连接，其 要测量的电位。 即使当固体物质隐藏在至少一个导电层和至少一个绝缘层下方时，电势也在固态物质下测量。 通过测量诱导的样品电流来识别固态物质的电位。

公开(公告)号：US06810117B1

公开(公告)日：2004-10-26

申请号：US09831999

申请日：2001-08-20

申请人： Gerald Meyer ,  Helmut Schink

发明人： Gerald Meyer ,  Helmut Schink

IPC分类号： H04M700

CPC分类号： H04Q11/04 ,  H04Q2213/13034 ,  H04Q2213/1309 ,  H04Q2213/13093 ,  H04Q2213/13096 ,  H04Q2213/13099 ,  H04Q2213/13107 ,  H04Q2213/13176 ,  H04Q2213/13179 ,  H04Q2213/13209 ,  H04Q2213/13292 ,  H04Q2213/13297 ,  H04Q2213/13342 ,  H04Q2213/13367 ,  H04Q2213/1338 ,  H04Q2213/13389

摘要： A method and circuit for simultaneously establishing communication links between a subscriber station connected to a switching center of a communication network via a single subscriber line and other subscriber stations connected to the same communication network wherein, the relevant subscriber line is operated as a multi-channel multiplex line, between the switching center and a translating device which is preferably provided at the transition to another communication network, especially the Internet, a multi-channel multiplex junction line, on the one hand, and, on the other hand, a number of individual junction lines exist, in the translating device, a demultiplexer/multiplexer which is used for the respective transition from a multiplex link to individual connections and conversely is located between the multiplex junction line and the individual junction lines.

摘要翻译： 一种用于在经由单个用户线路连接到通信网络的交换中心的用户站和连接到同一通信网络的其他用户站之间同时建立通信链路的方法和电路，其中相关用户线路作为多信道 多路复用线路，在交换中心和转换设备之间，该转换设备一方面优选地设置在向另一通信网络，特别是因特网，多信道多路复用连接线的过渡处，另一方面， 在翻译装置中存在用于从多路复用链路到各个连接的相应过渡的解复用器/多路复用器，并且相反地位于多路复用连接线和各个连接线之间的单个连接线。

公开(公告)号：US4739388A

公开(公告)日：1988-04-19

申请号：US900903

申请日：1986-08-27

申请人： Gerhard Packeiser ,  Helmut Schink ,  Gerard M. Martin ,  Jose Maluenda

发明人： Gerhard Packeiser ,  Helmut Schink ,  Gerard M. Martin ,  Jose Maluenda

IPC分类号： G01R31/28 ,  H01L21/66 ,  H01L23/52 ,  H01L23/528 ,  H01L23/544 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L22/14 ,  G01R31/2831 ,  H01L22/20 ,  H01L22/34 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/3011

摘要： An integrated circuit structure to be built on a semiconductor substrate wafer for the purpose of undertaking a quality check of the wafer has a plurality of field effect transistors laterally disposed in the same close adjacency as transistors which are to be manufactured on a chip using the wafer material. Each field effect transistor has its own well structure, its own source structure, and its own drain structure. The individual field effect transistors have pads allocated thereto at an edge of the structure. Each transistor source/drain structure is connected to the pads by a conductor, the totality of these conductors having width and/or length dimensions so that each run has approximately the same resistance. Only one common gate conductor for all of the transistors is provided.

摘要翻译： 为了进行晶片的质量检查而构建在半导体衬底晶片上的集成电路结构具有横向设置在与使用晶片的芯片上制造的晶体管相同的紧密相邻的多个场效应晶体管 材料。 每个场效应晶体管具有自己的阱结构，其自身的源极结构和其自身的漏极结构。 各个场效应晶体管在结构的边缘处分配有衬垫。 每个晶体管源极/漏极结构通过导体连接到焊盘，这些导体的总体具有宽度和/或长度尺寸，使得每次运行具有大致相同的电阻。 仅提供一个用于所有晶体管的公共栅极导体。

公开(公告)号：US20080313311A1

公开(公告)日：2008-12-18

申请号：US11997717

申请日：2006-07-24

申请人： Felix Flemisch ,  Jurgen Heiles ,  Jorg Ottensmeyer ,  Helmut Schink

发明人： Felix Flemisch ,  Jurgen Heiles ,  Jorg Ottensmeyer ,  Helmut Schink

IPC分类号： G06F15/16

CPC分类号： H04L61/157 ,  H04L29/12132 ,  H04L29/1216 ,  H04L61/1552

摘要： At the ENUM introductory phase, a problem occurs when a called subscriber is not registered in the ENUM directory listing. In such a situation, a calling subscriber can initiate the ENUM request but it receives an error message only since no inscription exists in the ENUM registration with respect to said FQDN. The aim of said invention is to shorten said introductory phase. According to the invention, the subscriber called according to the ENUM request, is thereby informed about possibilities offered by the ENUM system in the case when the DNS registration is not available.

摘要翻译： 在ENUM介绍阶段，当被叫用户未在ENUM目录列表中注册时，会出现问题。 在这种情况下，主叫用户可以发起ENUM请求，但是由于相对于所述FQDN的ENUM注册中没有记录，所以接收到错误消息。 所述发明的目的是缩短所述介绍阶段。 根据本发明，根据ENUM请求呼叫的用户因此被通知在DNS注册不可用的情况下由ENUM系统提供的可能性。

公开(公告)号：US4928069A

公开(公告)日：1990-05-22

申请号：US245379

申请日：1988-09-16

申请人： Helmut Schink ,  Ralf D. Schnell

发明人： Helmut Schink ,  Ralf D. Schnell

IPC分类号： H03H9/25 ,  H03F13/00 ,  H03H3/08 ,  H03H9/02

CPC分类号： H03F13/00 ,  H03H9/02976

摘要： An amplifying surface wave receiver for a surface wave element composed of a material which exhibits the piezo effect and which can be rendered electrically conductive by local doping, where a doped region is formed at the upper portion of an insulating substrate body (8) which forms the surface wave element and which is composed of piezo electric material, said doped region forms a conductive channel (7) between at least two contact electrodes which are spaced a defined distance from each other, and the conductive channel (7) formed such that occurring piezo charges are positioned so as to modulate the conductivity of said channel. One terminal of a voltage source (4) is connected to one of the contact electrodes (6) and the other terminal is connected to the other contact electrode (6) through an alternating current detector (5).

摘要翻译： 一种用于表面波元件的放大表面波接收器，其由表现出压电效应的材料构成，并且可以通过局部掺杂而导致导电，其中在形成绝缘基板主体（8）的上部形成掺杂区域， 所述表面波元件由压电材料构成，所述掺杂区域在至少两个彼此隔开限定距离的接触电极之间形成导电通道（7），所述导电通道（7）形成为使得发生 压电电荷被定位成调制所述通道的电导率。 电压源（4）的一个端子连接到一个接触电极（6），另一个端子通过交流电流检测器（5）连接到另一接触电极（6）。

公开(公告)号：US4646253A

公开(公告)日：1987-02-24

申请号：US599713

申请日：1984-04-12

申请人： Hans Rehme ,  Helmut Schink

发明人： Hans Rehme ,  Helmut Schink

IPC分类号： H01L21/66 ,  G01R31/265 ,  G01R31/302 ,  H01J37/26 ,  G01N23/22

CPC分类号： G01R31/2653

摘要： A method for high-precision imaging of electrical barrier layers (pn-junctions) in semiconductors by means of processing particle beam induced signals created during scanning with a corpuscular microscope, even when the electrical barrier layers are aligned perpendicularly or obliquely relative to a specimen surface. The path of the pn-junctions in cross-sections through semiconductor components may be identified with a high reliability such as within 0.1 .mu.m. Specific point (P(x,y), P(x+.DELTA.x, y+.DELTA.y), M(x,y), N(x,y), F(x,y)) is defined and particle beam induced signals generated along a scan line containing this specific point is compared with reference to particle beam induced signals generated along a further scanning line containing a point within a certain environment of the specific point first chosen with the comparison results being used to localize the electric barrier region profile.

摘要翻译： 通过在用扫描显微镜扫描过程中产生的粒子束感应信号处理半导体中的电阻挡层（pn结）的高精度成像方法，即使当电阻挡层相对于试样表面垂直或倾斜地排列时 。 通过半导体部件的横截面中的pn结的路径可以以高可靠性来识别，例如在0.1μm以内。 定义特定点（P（x，y），P（x + DELTA x，y + DELTA y），M（x，y），N（x，y），F（x，y） 沿着包含该特定点的扫描线与参考沿着另外的扫描线产生的粒子束感应信号进行比较，该扫描线包含在特定点的特定环境中首先选择的点，其中比较结果用于定位电阻挡区域轮廓。