METHOD FOR PRODUCING HYPERTHERMAL HYDROGEN MOLECULES AND USING SAME FOR SELECTIVELY BREAKING C-H AND/OR Si-H BONDS OF MOLECULES AT OR ON SUBSTRATE SURFACES
    1.
    发明申请
    METHOD FOR PRODUCING HYPERTHERMAL HYDROGEN MOLECULES AND USING SAME FOR SELECTIVELY BREAKING C-H AND/OR Si-H BONDS OF MOLECULES AT OR ON SUBSTRATE SURFACES 有权
    用于生产高级氢分子的方法,并且使用它们在基底表面上或在基底表面上选择性地断裂C-H和/或Si-H分子

    公开(公告)号:US20120061558A1

    公开(公告)日:2012-03-15

    申请号:US13255038

    申请日:2010-03-03

    IPC分类号: H05H3/02

    摘要: A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio. Since the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the flux of hyperthermal hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. When this method of generating a high flux of hyperthermal molecular hydrogen is applied to bombard organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality/functionalities on a substrate, the C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer having a controllable degree of cross-linking and retaining the desirable chemical functionality/functionalities of the precursor molecules.

    摘要翻译: 公开了一种制备超热分子氢的方法,并公开了其用于选择性地破坏C-H或Si-H键而不破坏其它键的用途。 维持氢等离子体并用电场提取质子,以将其加速至适当的动能。 质子进入漂移区,与气相中的分子氢碰撞。 级联的碰撞产生高通量的超热分子氢,其通量比从氢等离子体提取的质子通量多大许多倍。 超热分子氢与质子的标称通量比由漂移区中的氢气压力和漂移区的长度来控制。 质子的提取能量由这些超热分子共享,使得超热分子氢的平均能量由质子的提取能量和标称通量比控制。 由于超热分子氢射弹不携带任何电荷,所以超热氢气流可用于工程电绝缘产品和导电产品的表面改性。 当产生高通量的超热分子氢的方法用于轰击在底物上具有理想的化学官能度/功能性的有机前体分子(或硅氧烷或硅烷分子)时,C-H或Si-H键优先被切割 这是由于从超热氢弹体到前体分子中的氢原子的能量沉积的运动选择性。 诱导的交联反应产生具有可控程度的交联并保持前体分子所需的化学官能度/功能的稳定的分子层。

    Method of Controllable Morphology of Self-Assembled Monolayers on Substrates
    2.
    发明申请
    Method of Controllable Morphology of Self-Assembled Monolayers on Substrates 审中-公开
    基板上自组装单层可控形态的方法

    公开(公告)号:US20080075885A1

    公开(公告)日:2008-03-27

    申请号:US10568619

    申请日:2004-08-17

    摘要: Method of controlling the morphology of self-assembled monolayers (SAMS) on substrates having hydrophilic surfaces. The hydrophilic surface is exposed to a fluid having a mixture of molecules which can self-assemble on the hydrophilic surface and hydrophobic molecules for a sufficient length of time so that the molecules which can self-assemble on the hydrophilic surface form a complete self-assembled monolayer. In a particular embodiment octadecylphosphonic acid (OPA) molecules have been self-assembled on oxidized substrates including but not limited to mica, silicon, sapphire, quartz and aluminum by spin-coating a solution containing the octadecylphosphonic acid (OPA) molecules and hydrophobic molecules such as chloroform or trichloroethylene under a controlled relative humidity. Control of the morphology of OPA SAMs is affected by adjusting humidity and the duration of spin-coating. Atomic force microscopy revealed that relative humidity has a profound influence on the morphology of the OPA SAMs formed. When sufficient molecules are applied either consecutively or separately, the final morphology will be a complete monolayer, regardless of the relative humidity.

    摘要翻译: 在具有亲水性表面的基材上控制自组装单层(SAMS)形态的方法。 将亲水表面暴露于具有可以在亲水表面上自组装的分子混合物的流体和疏水性分子足够长的时间,使得能够在亲水表面上自组装的分子形成完整的自组装 单层。 在一个具体实施方案中,十八烷基膦酸(OPA)分子已经在氧化底物上自组装,包括但不限于云母,硅,蓝宝石,石英和铝,通过旋涂包含十八烷基膦酸(OPA)分子和疏水分子的溶液 作为氯仿或三氯乙烯在受控的相对湿度下。 控制OPA SAM的形态受调节湿度和旋涂持续时间的影响。 原子力显微镜显示相对湿度对形成的OPA SAM的形态有深远的影响。 当连续或分别施加足够的分子时,无论相对湿度如何,最终形态将是完整的单层。

    Method for producing hyperthermal hydrogen molecules and using same for selectively breaking C—H and/or Si—H bonds of molecules at or on substrate surfaces

    公开(公告)号:US09113544B2

    公开(公告)日:2015-08-18

    申请号:US13255038

    申请日:2010-03-03

    摘要: A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio. Since the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the flux of hyperthermal hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. When this method of generating a high flux of hyperthermal molecular hydrogen is applied to bombard organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality/functionalities on a substrate, the C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer having a controllable degree of cross-linking and retaining the desirable chemical functionality/functionalities of the precursor molecules.

    METHOD FOR FABRICATION OF LAYERED HETEROJUNCTION POLYMERIC DEVICES

    公开(公告)号:US20120056167A1

    公开(公告)日:2012-03-08

    申请号:US13254847

    申请日:2010-03-03

    IPC分类号: H01L51/40 H01L51/30

    摘要: Method for growing multilayer polymer based heterojunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods. In one embodiment, a hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times of the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is easily controllable by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is easily controlled by extraction energy of the protons and the nominal flux ratio. Since unlike protons the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the high flux of hyperthermal molecular hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. In a typical embodiment, organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality or a set of functionalities and with desirable electrical properties are condensed on a substrate with a solution-based deposition method. The molecular layer is bombarded by the high flux of hyperthermal molecular hydrogen derived from a hydrogen plasma. The C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer retaining the desirable chemical functionality/functionalities and electrical properties carried to the substrate by the precursor molecules. The molecular layer is thus cured and ready for additional molecular layer formation for the production of polymer devices which typically comprise one or more than one polymer heterojunction.

    Method of selective removal of organophosphonic acid molecules from their self-assembled monolayer on Si substrates
    6.
    发明申请
    Method of selective removal of organophosphonic acid molecules from their self-assembled monolayer on Si substrates 审中-公开
    从Si衬底上的自组装单层选择性去除有机膦酸分子的方法

    公开(公告)号:US20070212808A1

    公开(公告)日:2007-09-13

    申请号:US11716013

    申请日:2007-03-09

    IPC分类号: H01L51/40

    摘要: A scanning probe based method to selectively remove self-assembled organic molecules from their self-assembled monolayer (SAM) prepared on a conducting/semiconducting substrate having a hydrophilic surface. This technique involves the use of a conductive probe tip scanning a SAM with a thickness of not more than a few nanometers under an electric field applied by the scanning tip with a field strength of about 109 V/m between the tip and the surface of the conducting/semiconducting substrate. The patterned SAM can be used a device mould for the development of a nano-lithography technology or a device element in the fabrication of a nano-device. The present invention accommodates the trend of ever-decreasing size of devices.

    摘要翻译: 一种基于扫描探针的方法,用于从其具有亲水表面的导电/半导体衬底上制备的自组装单层(SAM)选择性去除自组装的有机分子。 该技术涉及使用在扫描尖端施加的电场强度为约10V / m 2的扫描SAM的厚度不超过几纳米的导电探针尖端 在导电/半导体衬底的尖端和表面之间。 图案化的SAM可以用于在纳米器件的制造中开发纳米光刻技术或器件元件的器件模具。 本发明适应装置尺寸不断减小的趋势。