摘要:
A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio. Since the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the flux of hyperthermal hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. When this method of generating a high flux of hyperthermal molecular hydrogen is applied to bombard organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality/functionalities on a substrate, the C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer having a controllable degree of cross-linking and retaining the desirable chemical functionality/functionalities of the precursor molecules.
摘要:
Method of controlling the morphology of self-assembled monolayers (SAMS) on substrates having hydrophilic surfaces. The hydrophilic surface is exposed to a fluid having a mixture of molecules which can self-assemble on the hydrophilic surface and hydrophobic molecules for a sufficient length of time so that the molecules which can self-assemble on the hydrophilic surface form a complete self-assembled monolayer. In a particular embodiment octadecylphosphonic acid (OPA) molecules have been self-assembled on oxidized substrates including but not limited to mica, silicon, sapphire, quartz and aluminum by spin-coating a solution containing the octadecylphosphonic acid (OPA) molecules and hydrophobic molecules such as chloroform or trichloroethylene under a controlled relative humidity. Control of the morphology of OPA SAMs is affected by adjusting humidity and the duration of spin-coating. Atomic force microscopy revealed that relative humidity has a profound influence on the morphology of the OPA SAMs formed. When sufficient molecules are applied either consecutively or separately, the final morphology will be a complete monolayer, regardless of the relative humidity.
摘要:
A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio. Since the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the flux of hyperthermal hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. When this method of generating a high flux of hyperthermal molecular hydrogen is applied to bombard organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality/functionalities on a substrate, the C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer having a controllable degree of cross-linking and retaining the desirable chemical functionality/functionalities of the precursor molecules.
摘要:
Method for growing multilayer polymer based hetexjunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods.
摘要:
Method for growing multilayer polymer based heterojunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods. In one embodiment, a hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times of the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is easily controllable by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is easily controlled by extraction energy of the protons and the nominal flux ratio. Since unlike protons the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the high flux of hyperthermal molecular hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. In a typical embodiment, organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality or a set of functionalities and with desirable electrical properties are condensed on a substrate with a solution-based deposition method. The molecular layer is bombarded by the high flux of hyperthermal molecular hydrogen derived from a hydrogen plasma. The C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer retaining the desirable chemical functionality/functionalities and electrical properties carried to the substrate by the precursor molecules. The molecular layer is thus cured and ready for additional molecular layer formation for the production of polymer devices which typically comprise one or more than one polymer heterojunction.
摘要:
A scanning probe based method to selectively remove self-assembled organic molecules from their self-assembled monolayer (SAM) prepared on a conducting/semiconducting substrate having a hydrophilic surface. This technique involves the use of a conductive probe tip scanning a SAM with a thickness of not more than a few nanometers under an electric field applied by the scanning tip with a field strength of about 109 V/m between the tip and the surface of the conducting/semiconducting substrate. The patterned SAM can be used a device mould for the development of a nano-lithography technology or a device element in the fabrication of a nano-device. The present invention accommodates the trend of ever-decreasing size of devices.
摘要翻译:一种基于扫描探针的方法,用于从其具有亲水表面的导电/半导体衬底上制备的自组装单层(SAM)选择性去除自组装的有机分子。 该技术涉及使用在扫描尖端施加的电场强度为约10V / m 2的扫描SAM的厚度不超过几纳米的导电探针尖端 在导电/半导体衬底的尖端和表面之间。 图案化的SAM可以用于在纳米器件的制造中开发纳米光刻技术或器件元件的器件模具。 本发明适应装置尺寸不断减小的趋势。