Method and arrangement pertaining to microwave lenses
    1.
    发明授权
    Method and arrangement pertaining to microwave lenses 失效
    微波透镜的方法和布置

    公开(公告)号:US06424318B1

    公开(公告)日:2002-07-23

    申请号:US09556871

    申请日:2000-04-21

    CPC classification number: H01Q15/08 H01Q19/062 Y10T29/49016

    Abstract: The present invention addresses the problem of simplifying the provision of microwave lenses in particular, but not exclusively, when microwave lenses are disposed in the close proximity of antenna elements (3) in devices (1; 1.1) for transmitting and/or receiving microwave radiation. According to the invention, a microwave lens is formed from a droplet (11; 11.1) of material that refract microwave radiation. The droplet (11; 11.1) assumes a predetermined shape in a liquid state, said shape depending chiefly on external limitations, the volume of material used and the properties of the material. The droplet (11; 11.1) is then allowed to solidify while retaining said assumed shape. The invention relates to devices and methods relating to this simplified provision of microwave lenses.

    Abstract translation: 本发明解决了简化微波透镜的提供的问题,特别是但不排他地,当微波透镜设置在用于发射和/或接收微波辐射的装置(1; 1.1)中的天线元件(3)附近时 。 根据本发明,微波透镜由折射微波辐射的材料的液滴(11; 11.1)形成。 液滴(11; 11.1)以液态呈现预定形状,所述形状主要取决于外部限制,所用材料的体积和材料的性质。 然后允许液滴(11; 11.1)固化,同时保持所述假设的形状。 本发明涉及与微波透镜的这种简化提供相关的装置和方法。

    Low threshold voltage diode-connected FET
    2.
    发明授权
    Low threshold voltage diode-connected FET 有权
    低阈值电压二极管连接的FET

    公开(公告)号:US6097247A

    公开(公告)日:2000-08-01

    申请号:US161231

    申请日:1998-09-28

    Applicant: Herbert Zirath

    Inventor: Herbert Zirath

    CPC classification number: H03D7/125 H01L29/861 H03D7/02

    Abstract: A diode device with a low or negligible threshold voltage includes at least one field effect transistor, the gate of the field effect transistor being connected to the drain of the field effect transistor. The threshold voltage of the diode device is approximately of the same magnitude as the potential of the gate of the field effect transistor forming part of the diode device.

    Abstract translation: 具有低或可忽略的阈值电压的二极管器件包括至少一个场效应晶体管,场效应晶体管的栅极连接到场效应晶体管的漏极。 二极管器件的阈值电压与形成二极管器件的一部分的场效应晶体管的栅极的电位大致相同。

    Frequency tunable signal source
    3.
    发明授权
    Frequency tunable signal source 有权
    频率可调信号源

    公开(公告)号:US08766730B2

    公开(公告)日:2014-07-01

    申请号:US13641841

    申请日:2010-04-21

    CPC classification number: H03B21/01

    Abstract: A frequency tunable signal source (100) with first (105) and a second (115, 315) oscillators, each of which outputs a signal at a fundamental frequency (f1, f2) and at least one signal at a harmonic frequency (f1′, f2′) and a mixer (120) with first (121) and second (122) input ports and an output port (124), and a control unit (110) which controls switches (S1, S2, S3, S4), by means of which two of said signals (f1, f2, f1′, f2′) are switchably connected to the first input port. The other two signals are switchably to the other input port, with one switch (S1, S2, S3, S4) for each signal (f1, f2, f1′, f2′). There is also comprised a third oscillator (125), with an output signal connected to a third input port (123) of the mixer (120). At least one of the oscillators (105, 115, 315, 125) is a VCO, a Voltage Controlled Oscillator.

    Abstract translation: 一种具有第一(105)和第二(115,315)振荡器的频率可调信号源(100),每个振荡器输出基频(f1,f2)的信号和谐波频率(f1')的至少一个信号, ,f2')和具有第一(121)和第二(122)输入端口的混合器(120)和输出端口(124),以及控制单元(110),其控制开关(S1,S2,S3,S4) 通过其中的两个所述信号(f1,f2,f1',f2')可切换地连接到第一输入端口。 另外两个信号切换到另一个输入端口,每个信号(f1,f2,f1',f2')有一个开关(S1,S2,S3,S4)。 还包括第三振荡器(125),其输出信号连接到混频器(120)的第三输入端口(123)。 振荡器(105,115,315,125)中的至少一个是VCO,压控振荡器。

    Frequency Tunable Signal Source
    4.
    发明申请
    Frequency Tunable Signal Source 有权
    频率可调信号源

    公开(公告)号:US20130038376A1

    公开(公告)日:2013-02-14

    申请号:US13641841

    申请日:2010-04-21

    CPC classification number: H03B21/01

    Abstract: A frequency tunable signal source (100) with first (105) and a second (115, 315) oscillators, each of which outputs a signal at a fundamental frequency (f1, f2) and at least one signal at a harmonic frequency (f1′, f2′) and a mixer (120) with first (121) and second (122) input ports and an output port (124), and a control unit (110) which controls switches (S1, S2, S3, S4), by means of which two of said signals (f1, f2, f1′, f2′) are switchably connected to the first input port. The other two signals are switchably to the other input port, with one switch (S1, S2, S3, S4) for each signal (f1, f2, f1′, f2′). There is also comprised a third oscillator (125), with an output signal connected to a third input port (123) of the mixer (120). At least one of the oscillators (105, 115, 315, 125) is a VCO, a Voltage Controlled Oscillator.

    Abstract translation: 一种具有第一(105)和第二(115,315)振荡器的频率可调信号源(100),每个振荡器输出基频(f1,f2)的信号和谐波频率(f1')的至少一个信号, ,f2')和具有第一(121)和第二(122)输入端口的混合器(120)和输出端口(124),以及控制单元(110),其控制开关(S1,S2,S3,S4) 通过其中的两个所述信号(f1,f2,f1',f2')可切换地连接到第一输入端口。 另外两个信号切换到另一个输入端口,每个信号(f1,f2,f1',f2')有一个开关(S1,S2,S3,S4)。 还包括第三振荡器(125),其输出信号连接到混频器(120)的第三输入端口(123)。 振荡器(105,115,315,125)中的至少一个是VCO,压控振荡器。

    Capacitor
    5.
    发明申请
    Capacitor 审中-公开
    电容器

    公开(公告)号:US20070217122A1

    公开(公告)日:2007-09-20

    申请号:US10596664

    申请日:2003-12-23

    Abstract: A method of creating a capacitor in an integrated circuit. According to a basic version of the invention the capacitor uses intensive fringing fields to create a capacitance. This is achieved by creating a capacitor with vertical overlapping conducting electrodes between two planes of the integrated circuit, instead of plates parallel to the planes. A capacitor according to the invention can additionally comprise horizontal, i.e. parallel plates. A capacitor according the method is also disclosed.

    Abstract translation: 一种在集成电路中产生电容器的方法。 根据本发明的基本版本,电容器使用密集边缘场来产生电容。 这通过在集成电路的两个平面之间产生具有垂直重叠的导电电极的电容器而不是平行于平面的板来实现。 根据本发明的电容器还可以包括水平的,即平行的板。 还公开了根据该方法的电容器。

    Frequency Multiplying Arrangements and a Method for Frequency Multiplication
    6.
    发明申请
    Frequency Multiplying Arrangements and a Method for Frequency Multiplication 审中-公开
    频率乘法布置和频率乘法方法

    公开(公告)号:US20070205844A1

    公开(公告)日:2007-09-06

    申请号:US10596609

    申请日:2003-12-19

    Applicant: Herbert Zirath

    Inventor: Herbert Zirath

    CPC classification number: H03B19/14 H03B5/1209 H03B5/1231 H03B5/1296

    Abstract: The present invention relates to a frequency multiplying arrangement (10) comprising a transistor arrangement with a first and a second transistor (T1, T2), each with an emitter (e), a base (b) and a collector (c), a voltage (current) source, output means for extracting an output signal (Vout) comprising a multiplied output frequency harmonic of an input signal (Vin), and impedance means. The impedance means comprises a first impedance means (3) connected to the collectors of the respective transistors, the transistors operating in phase opposition, and the waveform of the current for each transistor is half wave shaped such that the transistor is conducting only the half of each period, and the output signal (Vout) is extracted (P) between the first impedance means (3; 31; 32; 33; 34; 35) and the collectors (c) of the transistors.

    Abstract translation: 本发明涉及一种频率倍增装置(10),它包括具有第一和第二晶体管(T 1,T 2)的晶体管装置,每个具有发射极(e),基极(b)和集电极(c) ,电压(电流)源,输出装置,用于提取包括输入信号的相乘输出频率谐波(V SUB)的输出信号(V OUT),以及阻抗 手段。 阻抗装置包括连接到相应晶体管的集电极的第一阻抗装置(3),晶体管以相位相反的方式工作,并且每个晶体管的电流波形是半波形的,使得晶体管仅导通 每个周期和在第一阻抗装置(3; 3 <1> 3 <3> 2 <3>)之间提取(P)的输出信号(V OUT) 3 3 3 3 3 3 3 3)和晶体管的集电极(c)。

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