公开(公告)号：US07049169B2

公开(公告)日：2006-05-23

申请号：US10351355

申请日：2003-01-27

申请人： Kouichi Nagai ,  Hideyuki Kanemitsu

发明人： Kouichi Nagai ,  Hideyuki Kanemitsu

IPC分类号： H01L51/40

CPC分类号： H01L21/02118 ,  G03F7/0045 ,  G03F7/16 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/0271 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/32139 ,  H01L21/74 ,  H01L21/743 ,  H01L21/76802 ,  H01L21/823842

摘要： According to the present invention, by applying a basic surface-processing agent to a film underlying a resist, the excessive photoacid present at the interface between the resist and the front-end film is neutralized and the pattern shape can be controlled. The present invention provides a method of manufacturing a semiconductor device including the steps of, forming an insulating film on a surface, applying a surface processing agent containing of at least a solvent and a basic component on the insulating film, applying a resist on the insulating film thus applied with the surface processing agent, patterning the resist by lithography, and transferring a resist pattern to the insulating film by a dry etching process.

摘要翻译： 根据本发明，通过在抗蚀剂下面的膜上涂布碱性表面处理剂，中和抗蚀剂与前端膜之间的界面处存在的过度的光酸，能够控制图案形状。 本发明提供一种制造半导体器件的方法，包括以下步骤：在表面上形成绝缘膜，在绝缘膜上施加至少含有溶剂和碱性成分的表面处理剂，在绝缘膜上涂敷抗蚀剂 由此施加表面处理剂的膜，通过光刻对抗蚀剂进行图案化，并通过干法蚀刻工艺将抗蚀剂图案转印到绝缘膜上。

公开(公告)号：US06576375B1

公开(公告)日：2003-06-10

申请号：US09671678

申请日：2000-09-28

申请人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

发明人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

IPC分类号： G03F900

CPC分类号： G03F1/62 ,  G03F1/46 ,  G03F1/48 ,  G03F1/50 ,  G03F1/58

摘要： A photomask comprises a transparent substrate, a anti-reflection structure having a chromium oxide film, a chromium film and a chromium oxide film laminated in order on the major surface of the transparent substrate, an LiF film as a anti-reflection film formed on the surface of the first chromium oxide and at the interface between the chromium oxide film and the transparent substrate, and a spin-on-glass film formed on the surface of the chromium oxide film.

摘要翻译： 光掩模包括透明基板，在透明基板的主表面上依次层叠有氧化铬膜，铬膜和氧化铬膜的防反射结构，形成在透明基板上的防反射膜的LiF膜 第一氧化铬的表面和氧化铬膜与透明基板的界面，以及在氧化铬膜的表面上形成的旋涂玻璃膜。

公开(公告)号：US07504341B2

公开(公告)日：2009-03-17

申请号：US10360875

申请日：2003-02-10

申请人： Kouichi Nagai ,  Hideyuki Kanemitsu

发明人： Kouichi Nagai ,  Hideyuki Kanemitsu

IPC分类号： H01L21/302

CPC分类号： H01L21/823842 ,  G03F7/11 ,  H01L21/31144 ,  H01L21/76802

摘要： A method of manufacturing a semiconductor device, including the steps of forming one or more insulation films over a substrate, said one or more insulation films including an insulation film at a top thereof, coating the insulation film with a substrate processing agent, providing resist onto the insulation film coated with the substrate processing agent, lithographically forming a pattern of the resist, and dry-etching the insulation film by using the resist as a mask, wherein the substrate processing agent contains at least a solvent and an acid generating agent.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在衬底上形成一个或多个绝缘膜，所述一个或多个绝缘膜在其顶部包括绝缘膜，用基板处理剂涂覆绝缘膜，将抗蚀剂提供到 涂覆有基板处理剂的绝缘膜，光刻形成抗蚀剂图案，并通过使用抗蚀剂作为掩模来干蚀刻绝缘膜，其中基板处理剂至少含有溶剂和酸产生剂。