公开(公告)号：US20110300646A1

公开(公告)日：2011-12-08

申请号：US13015351

申请日：2011-01-27

申请人： Seiro MIYOSHI ,  Hidefumi MUKAI ,  Takeshi KOSHIBA

发明人： Seiro MIYOSHI ,  Hidefumi MUKAI ,  Takeshi KOSHIBA

IPC分类号： H01L21/66 ,  B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S977/887

摘要： In the pattern forming method according to the embodiment, second templates are manufactured by an imprint technology using first templates manufactured by applying a predetermined misalignment distribution for each shot on a first substrate by an exposure apparatus. Then, an upper-layer-side pattern is formed by an imprint technology using a second template in which an inter-layer misalignment amount between a lower-layer-side pattern already formed above a second substrate and the upper-layer-side pattern to be formed above the second substrate becomes equal to or lower than a predetermined reference value.

摘要翻译： 在根据实施例的图案形成方法中，通过压印技术制造第二模板，使用通过由曝光装置在第一基板上施加每次拍摄的预定的未对准分布而制造的第一模板。 然后，通过使用第二模板的压印技术形成上层侧图案，其中在已经形成在第二基板上的下层侧图案与上层侧图案之间的层间未对准量与 形成在第二基板的上方成为规定的基准值以下。

公开(公告)号：US20110012297A1

公开(公告)日：2011-01-20

申请号：US12718778

申请日：2010-03-05

申请人： Ayumi KOBIKI ,  Takeshi Koshiba ,  Hidefumi Mukai ,  Seiro Miyoshi

发明人： Ayumi KOBIKI ,  Takeshi Koshiba ,  Hidefumi Mukai ,  Seiro Miyoshi

IPC分类号： B29C35/08 ,  B29C39/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A pattern transfer method for transferring an uneven pattern onto a resist material is disclosed. The uneven pattern is formed in a template having a through-groove in a predetermined region. The resist material is applied to a substrate. The template is made to come into contact with the resist material. The resist material is filled to concave portion in the uneven pattern. The residual resist material leaked from a gap between the substrate and the template to the outside is sucked through the through-groove in a state where the template is in contact with the resist material. The resist material is made to cure in a state where the template is in contact with the resist material after the suction of the residual resist material. The template is separated from the cured resist material.

摘要翻译： 公开了一种用于将不均匀图案转印到抗蚀剂材料上的图案转印方法。 不规则图案形成在具有预定区域中的通槽的模板中。 将抗蚀剂材料施加到基底上。 使模板与抗蚀剂材料接触。 抗蚀剂材料以不均匀图案填充到凹部。 在模板与抗蚀剂材料接触的状态下，从基板和模板之间的间隙向外部泄漏的残留抗蚀剂材料通过贯通槽进行吸引。 抗蚀剂材料在残留抗蚀剂材料的吸附之后，在模板与抗蚀剂材料接触的状态下使其固化。 将模板与固化的抗蚀剂材料分离。

公开(公告)号：US20100304568A1

公开(公告)日：2010-12-02

申请号：US12752684

申请日：2010-04-01

申请人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

发明人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

IPC分类号： H01L21/302 ,  G03F7/20

CPC分类号： G03F1/34 ,  G03F7/095 ,  H01L21/0274 ,  H01L21/31144

摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.

摘要翻译： 图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度， 通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置， 以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂 剩下第二光致抗蚀剂。

公开(公告)号：US20090226624A1

公开(公告)日：2009-09-10

申请号：US12466525

申请日：2009-05-15

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05D1/02 ,  B05B7/00 ,  B05B13/04 ,  B05C5/00 ,  B05B15/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US20090123878A1

公开(公告)日：2009-05-14

申请号：US12256240

申请日：2008-10-22

申请人： Seiro MIYOSHI ,  Eishi Shiobara

发明人： Seiro MIYOSHI ,  Eishi Shiobara

IPC分类号： G03F7/20

CPC分类号： H01L21/31144 ,  G03F7/11 ,  G03F7/2004 ,  H01L21/0274 ,  H01L21/28017 ,  H01L21/32139

摘要： A patterning method includes: forming a first film on a workpiece substrate; forming a second film on the first film, the second film being a silicon film having a lower optical absorption coefficient with respect to EUV (extreme ultraviolet) light than the first film; forming a resist film on the second film; selectively irradiating the resist film with the EUV light; and developing the resist film.

摘要翻译： 图案化方法包括：在工件基板上形成第一膜; 在第一膜上形成第二膜，第二膜是相对于第一膜的EUV（极紫外）光具有较低的光吸收系数的硅膜; 在第二膜上形成抗蚀剂膜; 用EUV光选择性地照射抗蚀剂膜; 并开发抗蚀膜。

公开(公告)号：US20110224934A1

公开(公告)日：2011-09-15

申请号：US12882998

申请日：2010-09-15

申请人： Seiro Miyoshi ,  Hideaki Abe ,  Kazuhiro Takahata ,  Masafumi Asano ,  Shoji Mimotogi ,  Tomoko Ojima ,  Masanari Kajiwara

发明人： Seiro Miyoshi ,  Hideaki Abe ,  Kazuhiro Takahata ,  Masafumi Asano ,  Shoji Mimotogi ,  Tomoko Ojima ,  Masanari Kajiwara

IPC分类号： G06F19/00

CPC分类号： G03F7/70625 ,  G03F7/70525 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, an evaluating apparatus includes a resist-pattern-data acquiring unit and an evaluating unit. The resist-pattern-data acquiring unit acquires resist pattern data having a plurality of feature values including at least two among a hole diameter measured concerning a pattern for hole formation in the resist pattern, an aspect ratio of the hole diameter, and a difference of hole diameters at a plurality of signal thresholds. The evaluating unit calculates an evaluation value using an evaluation function for evaluating whether a hole pattern formed on a processing target by using the pattern for hole formation is unopened and the resist pattern data and evaluates presence or absence of a risk that the hole pattern is unopened.

摘要翻译： 根据一个实施例，评估装置包括抗蚀剂图案数据获取单元和评估单元。 抗蚀剂图案数据获取单元获取具有多个特征值的抗蚀剂图案数据，所述多个特征值包括测量的关于抗蚀剂图案中的孔形成图案的孔直径，孔直径的纵横比和 孔径在多个信号阈值。 评价单元使用评价函数来计算评价值，该评价函数用于评估是否未打开通过使用用于形成孔的图案而形成在处理对象上的孔图案，并且抵抗图案数据并评估是否存在未打开孔图案的风险 。

公开(公告)号：US07985685B2

公开(公告)日：2011-07-26

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/311

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US20070266936A1

公开(公告)日：2007-11-22

申请号：US11798132

申请日：2007-05-10

申请人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Hirokazu Kato ,  Seiro Miyoshi ,  Shinichi Ito

IPC分类号： B05C11/02

CPC分类号： H01L21/67253 ,  H01L21/67051 ,  H01L21/6715

摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.

摘要翻译： 基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀 并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴 并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。 当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

公开(公告)号：US06576375B1

公开(公告)日：2003-06-10

申请号：US09671678

申请日：2000-09-28

申请人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

发明人： Seiro Miyoshi ,  Tsukasa Azuma ,  Hideyuki Kanemitsu

IPC分类号： G03F900

CPC分类号： G03F1/62 ,  G03F1/46 ,  G03F1/48 ,  G03F1/50 ,  G03F1/58

摘要： A photomask comprises a transparent substrate, a anti-reflection structure having a chromium oxide film, a chromium film and a chromium oxide film laminated in order on the major surface of the transparent substrate, an LiF film as a anti-reflection film formed on the surface of the first chromium oxide and at the interface between the chromium oxide film and the transparent substrate, and a spin-on-glass film formed on the surface of the chromium oxide film.

摘要翻译： 光掩模包括透明基板，在透明基板的主表面上依次层叠有氧化铬膜，铬膜和氧化铬膜的防反射结构，形成在透明基板上的防反射膜的LiF膜 第一氧化铬的表面和氧化铬膜与透明基板的界面，以及在氧化铬膜的表面上形成的旋涂玻璃膜。

公开(公告)号：US20130157437A1

公开(公告)日：2013-06-20

申请号：US13601003

申请日：2012-08-31

申请人： Yoshihiro YANAI ,  Koichi MATSUNO ,  Seiro MIYOSHI

发明人： Yoshihiro YANAI ,  Koichi MATSUNO ,  Seiro MIYOSHI

IPC分类号： H01L21/302 ,  H01L21/76

CPC分类号： H01L21/0274 ,  G11C16/0408 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/32139 ,  H01L27/11524 ,  H01L29/66825

摘要： According to one embodiment, firstly, an inversion pattern having a periodic pattern in which a first line pattern and a space are inversed and a non-periodic pattern arranged at an interval which is substantially equal to the width of the first line pattern from the end of the periodic pattern is formed above a processing object so as to correspond to the plurality of spaces between a plurality of first line patterns in a first pattern and the space between the first pattern and a second pattern. Next, a sidewall film is formed around the inversion pattern, and the periodic pattern is removed selectively. Thereafter, the processing object is etched using the sidewall pattern formed of the sidewall film and the non-periodic pattern surrounded by the sidewall film as masks.

摘要翻译： 根据一个实施例，首先，具有其中第一线图案和空间被倒置的周期性图案的反转图案和以从第一个第一线图案的宽度基本上等于第一线图案的宽度的间隔排列的非周期性图案 在处理对象之上形成周期性图案，以便对应于第一图案中的多个第一线图案与第一图案与第二图案之间的空间之间的多个间隔。 接下来，在反转图案周围形成侧壁膜，并且选择性地去除周期性图案。 此后，使用由侧壁膜形成的侧壁图案和由侧壁膜包围的非周期性图案作为掩模来蚀刻处理对象。