Abstract:
A composite optical waveguide 1 includes a first optical waveguide 9 comprising a silica-based core and a second optical waveguide 11 comprising an Si-based core. The second optical waveguide 11 is joined to the first optical waveguide 9. The length of the first optical waveguide 9 corresponds to a permissible propagation loss of the second optical waveguide 11. The second optical waveguide 11 includes a sharply curved portion 13 having a radius smaller than the minimum bend radius of the first optical waveguide 9.
Abstract:
In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the structure (33) is arranged in the vicinity of the structure (33) to control the directivity of localization and propagation of an electromagnetic field, light emission and light reception in a spatial region including the above structures in the multi-dimensional photonic crystals, in order to permit functional operations to be realized.
Abstract:
A distributed-feedback laser has a diffractive grating, an optical waveguide layer, and an active region. The optical waveguide layer has equivalent refractive indexes larger towards cavity end facets and smaller towards a device center portion along a cavity. The active region containing the optical waveguide layer has widths wider towards the cavity end facets and narrower towards the device center portion along the cavity. The optical waveguide layer has a uniform electric intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. In another arrangement, the optical waveguide layer formed on the diffractive grating has in its compositions longer wavelengths towards the cavity end facets and shorter wavelengths towards the cavity center portion along the cavity, whereby the optical waveguide layer has a uniform optical intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. The distributed-feedback laser provided is with improved analog modulation distortion characteristics.
Abstract:
A nonlinear-optic waveguide device has a thin-wire optical waveguide including a core having a cross-sectional area of at most 1 μm2 and a cladding, the core and the cladding having a refractive index difference of at least 1. A light pulse introduced into the core has a peak power of at least several hundreds W and a pulse duration of at most 10 ps. The thin-wire optical waveguide has a length of about 1 cm. The nonlinear optical device, a model-locked semiconductor laser, and tunable optical filter are combined into a white pulse light source.
Abstract:
A waveguide structure having a cross-sectional structure wherein Si is in the center and it is surrounded by a peripheral material, which is either SiO2 or a polymer material. The above-mentioned peripheral material functions as a cladding.
Abstract:
The present invention provides a photonic crystal waveguide comprising: a substrate; a bottom cladding layer over the substrate; and a core layer over the bottom cladding layer, the core layer having a uniform distribution of holes, wherein the core layer has at least a waveguide region which is thicker than a remaining region of the core layer to cause a refractive index guide effect, or wherein the core layer has at least a waveguide region, on which a dielectric pattern is provided which has a refractive index higher than a substance in contact with a top surface of the core layer, or wherein the core layer has at least a waveguide region, and the holes except on the waveguide region are filled with an air, whilst the holes on the waveguide regions are filled with a filler material having a refractive index higher than 1.
Abstract:
A semiconductor laser with a rewritable wavelength stabilizer which comprises a laser mirror made of a grating written into a photorefractive material, in which the oscillation wavelength of the laser diode is determined by the period of the grating. This allows the refractive index of the grating to be changed by illuminating the photorefractive material after cooling thereof to a temperature at which most of the doped impurities form DX centers. The grating can be erased by heating the photorefractive material to a temperature at which most DX centers are ionized, which erases the grating. Thereafter the photorefractive material is cooled again to a temperature at which most impurities become DX centers, and a new grating can be written in the photorefractive material. The wavelength of the semiconductor laser can be changed repeatedly by erasing and rewriting the grating therein. The laser diode is maintained and operated at a low temperature to maintain the grating semi-permanently therein while the temperature remains low.
Abstract:
Disclosed is an optical fiber remote sensing system, which has: first and second light sources which are connected to ends of branched optical fibers and emit lights with two wavelengths different from each other; one or more optical detectors which conduct a photoelectric conversion of the lights propagated through the optical fibers from the first and second light sources and generate an electromagnetic wave with a wavelength corresponding to a difference between the two different wavelengths; and a measuring means which receives the electromagnetic wave propagated through a measured substance and measures a state of the measured substance based on an optical absorption characteristic of the measured substance.
Abstract:
A semiconductor multiquantum well structure is provided, which includes semiconductor well layers for forming quantum wells and semiconductor barrier layers for forming potential barriers each of which is arranged between adjacent two of the well layers. Each barrier layer is 7 nm or less in thickness. A number of the well layers is selected dependent upon the thickness of each barrier layer so that carriers or electrons and holes are injected into the respective quantum wells substantially uniformly. The number of the well layers is preferably 5 or more, and in the case, each barrier layer preferably ranges from 5 nm to 7 nm in thickness. A semiconductor laser having superior distortion characteristics at a high-frequency band such as 1 GHz can be provided.
Abstract:
In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5%, and an active layer and a uniform grating having regular corrugation formed in the direction of the layer cavity and which are coupled to each other at a predetermined coupling constant K, the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.