摘要:
In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5%, and an active layer and a uniform grating having regular corrugation formed in the direction of the layer cavity and which are coupled to each other at a predetermined coupling constant K, the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.
摘要:
A distributed-feedback laser has a diffractive grating, an optical waveguide layer, and an active region. The optical waveguide layer has equivalent refractive indexes larger towards cavity end facets and smaller towards a device center portion along a cavity. The active region containing the optical waveguide layer has widths wider towards the cavity end facets and narrower towards the device center portion along the cavity. The optical waveguide layer has a uniform electric intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. In another arrangement, the optical waveguide layer formed on the diffractive grating has in its compositions longer wavelengths towards the cavity end facets and shorter wavelengths towards the cavity center portion along the cavity, whereby the optical waveguide layer has a uniform optical intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. The distributed-feedback laser provided is with improved analog modulation distortion characteristics.
摘要:
In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front the rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5%, and an active layer and a uniform grating having regular corrugation formed in the direction of the laser cavity and which are coupled to each other at a predetermined coupling constant K, the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.
摘要:
An acoustic wave filter apparatus where first balance input/output terminals of first and second acoustic wave filter sections are commonly connected to each other and then connected to a first balance terminal, second balance input/output terminals thereof are commonly connected to each other and then connected to a second balanced terminal, the first and second balance input/output terminals of the first acoustic wave filter section are coupled to the first and second balance terminals, respectively, via first and third wiring lines and first and third acoustic wave resonators, respectively, the first and second balance input/output terminals of the second acoustic wave filter section are coupled to the first and second balance terminals, respectively, via second and fourth wiring lines and second and fourth acoustic wave resonators, respectively, and the second wiring line and the third wiring line cross each other on a piezoelectric substrate.
摘要:
An acoustic wave filter apparatus includes first and second acoustic wave filter sections on one piezoelectric substrate, first balance terminals of the first and second acoustic wave filter sections are commonly coupled to each other, and second balance terminals thereof are commonly coupled to each other. An acoustic wave filter apparatus where first balance input/output terminals of first and second acoustic wave filter sections are commonly connected to each other and then connected to a first balance terminal, second balance input/output terminals thereof are commonly connected to each other and then connected to a second balance terminal, the first and second balance output terminals of the first acoustic wave filter section are connected to first and third acoustic wave resonators, respectively, via first and third wiring lines, respectively, and then coupled to the first and second balance terminals, respectively, via the first and third acoustic wave resonators, respectively, the first and second balance output terminals of the second acoustic wave filter section are coupled to the first and second balance terminals, respectively, via second and fourth wiring line and second and fourth acoustic wave resonators, respectively, and the second wiring line and second wiring line cross each other on a piezoelectric substrate.
摘要:
There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film; a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; and a plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.
摘要:
There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film; a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; and a plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.
摘要:
In a distributed feedback semiconductor laser having at least an active layer and a diffraction grating on a semiconductor substrate and so constructed that a current is injected uniformly over an axial direction of a resonator, a bandgap wavelength of the active layer in the neighborhood of a light outputting end or a backward end opposite to the light outputting end, is shorter than that in the other region of the active layer along the axial direction of the resonator.
摘要:
In a semiconductor laser for analog modulation, intermodulation distortion at high temperatures and/or at high outputs is reduced. In a DC-PBH semiconductor laser, the width (Wm) of the electrode mesa 11 is set at 10 .mu.m or less, and the width of each recombination layer 2 is set at 0.1 .mu.m or more. Further, the distance between one end of the active layer 1 and one end of each current-blocking layer 5 is set at 0.01 .mu.m to 0.5 .mu.m.