Laser diode element with excellent intermodulation distortion
characteristic
    1.
    发明授权
    Laser diode element with excellent intermodulation distortion characteristic 失效
    激光二极管元件具有优异的互调失真特性

    公开(公告)号:US5469459A

    公开(公告)日:1995-11-21

    申请号:US178859

    申请日:1994-01-07

    摘要: In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5%, and an active layer and a uniform grating having regular corrugation formed in the direction of the layer cavity and which are coupled to each other at a predetermined coupling constant K, the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.

    摘要翻译: 在包括前面,后刻面的激光二极管元件,形成在前后小面之间并具有预定长度L的激光腔,涂覆在前刻面上的涂层以提供小于5%的反射率,以及活性物质 层和均匀的光栅,其具有在层腔的方向上形成的规则的波纹,并且以预定的耦合常数K彼此耦合,激光二极管元件由预定耦合常数和预定长度L的乘积指定, 在0.4到1.0之间的范围内。

    Distributed-feedback laser with improved analog modulation distortion
characteristics and method for fabricating the same
    2.
    发明授权
    Distributed-feedback laser with improved analog modulation distortion characteristics and method for fabricating the same 失效
    具有改进的模拟调制失真特性的分布反馈激光器及其制造方法

    公开(公告)号:US5394429A

    公开(公告)日:1995-02-28

    申请号:US144038

    申请日:1993-11-01

    摘要: A distributed-feedback laser has a diffractive grating, an optical waveguide layer, and an active region. The optical waveguide layer has equivalent refractive indexes larger towards cavity end facets and smaller towards a device center portion along a cavity. The active region containing the optical waveguide layer has widths wider towards the cavity end facets and narrower towards the device center portion along the cavity. The optical waveguide layer has a uniform electric intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. In another arrangement, the optical waveguide layer formed on the diffractive grating has in its compositions longer wavelengths towards the cavity end facets and shorter wavelengths towards the cavity center portion along the cavity, whereby the optical waveguide layer has a uniform optical intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. The distributed-feedback laser provided is with improved analog modulation distortion characteristics.

    摘要翻译: 分布反馈激光器具有衍射光栅,光波导层和有源区。 光波导层具有相对于腔端面较大的等效折射率,并且朝着沿腔的器件中心部分较小。 包含光波导层的有源区域具有朝向腔体端面更宽的宽度,并且沿着空腔朝向器件中心部分较窄。 光波导层沿着空腔具有均匀的电强度分布,以提高电流对光输出特性的线性度。 在另一种布置中,形成在衍射光栅上的光波导层在其组成中具有朝向空腔端面的较长波长和沿着空腔朝向空腔中心部分的较短波长,由此光波导层沿着空腔具有均匀的光强度分布 以提高电流对光输出特性的线性度。 提供的分布式反馈激光器具有改进的模拟调制失真特性。

    Laser diode element with excellent intermodulation distortion
characteristic
    3.
    发明授权
    Laser diode element with excellent intermodulation distortion characteristic 失效
    激光二极管元件具有优异的互调失真特性

    公开(公告)号:US5568505A

    公开(公告)日:1996-10-22

    申请号:US463635

    申请日:1995-06-06

    摘要: In a laser diode element including a front facet, a rear facet, a laser cavity formed between the front the rear facets and which has a predetermined length L, coating layers coated on the front facet to provide a reflectivity smaller than 5%, and an active layer and a uniform grating having regular corrugation formed in the direction of the laser cavity and which are coupled to each other at a predetermined coupling constant K, the laser diode element is specified by a product of the predetermined coupling constant and the predetermined length L and falling within a range between 0.4 and 1.0, both inclusive.

    摘要翻译: 在包括前刻面,后刻面的激光二极管元件,形成在前后面之间并且具有预定长度L的激光腔之间,涂覆在前刻面上的涂层以提供小于5%的反射率,以及 有源层和在激光腔的方向上形成有规则的波纹并且以预定的耦合常数K彼此耦合的均匀的光栅,激光二极管元件由预定的耦合常数和预定长度L的乘积 并落在0.4和1.0之间的范围内。

    Acoustic wave filter apparatus
    5.
    发明授权
    Acoustic wave filter apparatus 有权
    声波滤波装置

    公开(公告)号:US07868716B2

    公开(公告)日:2011-01-11

    申请号:US12505604

    申请日:2009-07-20

    申请人: Tetsuro Okuda

    发明人: Tetsuro Okuda

    IPC分类号: H03H9/72 H03H9/64

    摘要: An acoustic wave filter apparatus where first balance input/output terminals of first and second acoustic wave filter sections are commonly connected to each other and then connected to a first balance terminal, second balance input/output terminals thereof are commonly connected to each other and then connected to a second balanced terminal, the first and second balance input/output terminals of the first acoustic wave filter section are coupled to the first and second balance terminals, respectively, via first and third wiring lines and first and third acoustic wave resonators, respectively, the first and second balance input/output terminals of the second acoustic wave filter section are coupled to the first and second balance terminals, respectively, via second and fourth wiring lines and second and fourth acoustic wave resonators, respectively, and the second wiring line and the third wiring line cross each other on a piezoelectric substrate.

    摘要翻译: 一种声波滤波器装置,其中第一和第二声波滤波器部分的第一平衡输入/输出端子共同连接,然后连接到第一平衡端子,其第二平衡输入/输出端子彼此相连,然后 连接到第二平衡端子,第一声波滤波器部分的第一和第二平衡输入/输出端分别经由第一和第三布线以及第一和第三声波谐振器分别耦合到第一和第二平衡端子 第二声波滤波器部分的第一和第二平衡输入/输出端分别通过第二和第四布线和第二和第四声波谐振器分别耦合到第一和第二平衡端子,第二布线 并且第三布线在压电基板上彼此交叉。

    ACOUSTIC WAVE FILTER APPARATUS
    6.
    发明申请
    ACOUSTIC WAVE FILTER APPARATUS 有权
    声波滤波器

    公开(公告)号:US20090273409A1

    公开(公告)日:2009-11-05

    申请号:US12505604

    申请日:2009-07-20

    申请人: Tetsuro Okuda

    发明人: Tetsuro Okuda

    IPC分类号: H03H9/64 H03H9/54 H03H7/42

    摘要: An acoustic wave filter apparatus includes first and second acoustic wave filter sections on one piezoelectric substrate, first balance terminals of the first and second acoustic wave filter sections are commonly coupled to each other, and second balance terminals thereof are commonly coupled to each other. An acoustic wave filter apparatus where first balance input/output terminals of first and second acoustic wave filter sections are commonly connected to each other and then connected to a first balance terminal, second balance input/output terminals thereof are commonly connected to each other and then connected to a second balance terminal, the first and second balance output terminals of the first acoustic wave filter section are connected to first and third acoustic wave resonators, respectively, via first and third wiring lines, respectively, and then coupled to the first and second balance terminals, respectively, via the first and third acoustic wave resonators, respectively, the first and second balance output terminals of the second acoustic wave filter section are coupled to the first and second balance terminals, respectively, via second and fourth wiring line and second and fourth acoustic wave resonators, respectively, and the second wiring line and second wiring line cross each other on a piezoelectric substrate.

    摘要翻译: 声波滤波器装置包括在一个压电基板上的第一和第二声波滤波器部分,第一和第二声波滤波器部分的第一平衡端子彼此共同耦合,并且其第二平衡端子彼此共同耦合。 一种声波滤波器装置,其中第一和第二声波滤波器部分的第一平衡输入/输出端子共同连接,然后连接到第一平衡端子,其第二平衡输入/输出端子彼此相连,然后 连接到第二平衡端子,第一声波滤波器部分的第一和第二平衡输出端子分别经由第一和第三布线连接到第一和第三声波谐振器,然后耦合到第一和第二平衡端子 平衡端子分别经由第一和第三声波谐振器,第二声波滤波器部分的第一和第二平衡输出端分别经由第二和第四布线和第二布线连接到第一和第二平衡端子 和第四声波谐振器,第二布线和第二布线交叉 彼此在压电基板上。

    Semiconductor laser and manufacturing process therefor
    7.
    发明申请
    Semiconductor laser and manufacturing process therefor 有权
    半导体激光器及其制造工艺

    公开(公告)号:US20050254541A1

    公开(公告)日:2005-11-17

    申请号:US11124113

    申请日:2005-05-09

    申请人: Tetsuro Okuda

    发明人: Tetsuro Okuda

    摘要: There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film; a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; and a plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.

    摘要翻译: 提供了包括n-InP衬底1的半导体激光器; 包含n-InP基板1上的应变MQW有源层6的多层膜; 多层膜上的p电极18; 一对槽15,其分离p电极18的两个边缘并延伸到n-InP衬底1的多层膜; 以及在形成于n-InP基板1的上表面的任意半导体膜的上表面的衍射光栅形成面上,形成在该对沟槽15的一面与另一方的区域的多个衍射光栅, 多层膜。

    Semiconductor laser and manufacturing process therefor
    8.
    发明授权
    Semiconductor laser and manufacturing process therefor 有权
    半导体激光器及其制造工艺

    公开(公告)号:US07602827B2

    公开(公告)日:2009-10-13

    申请号:US11124113

    申请日:2005-05-09

    申请人: Tetsuro Okuda

    发明人: Tetsuro Okuda

    IPC分类号: H01S3/04

    摘要: There is provided a semiconductor laser comprising an n-InP substrate 1; a multilayer film including a strained MQW active layer 6 on the n-InP substrate 1; a p-electrode 18 on the multilayer film; a pair of grooves 15 separating the multilayer film in both edges of the p-electrode 18 and extending to the n-InP substrate 1; and a plurality of diffraction gratings formed in an area from one to the other of the pair of grooves 15 in a diffraction grating forming surface formed in the upper surface of the n-InP substrate 1 or the upper surface of any of the semiconductor films in the multilayer film.

    摘要翻译: 提供了包括n-InP衬底1的半导体激光器; 包含n-InP基板1上的应变MQW有源层6的多层膜; 多层膜上的p电极18; 一对槽15,其分离p电极18的两个边缘并延伸到n-InP衬底1的多层膜; 以及在形成于n-InP基板1的上表面的任意半导体膜的上表面的衍射光栅形成面上,形成在该对沟槽15的一面与另一方的区域的多个衍射光栅, 多层膜。

    Distributed feedback semiconductor laser
    9.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号:US06526087B1

    公开(公告)日:2003-02-25

    申请号:US09524219

    申请日:2000-03-13

    申请人: Tetsuro Okuda

    发明人: Tetsuro Okuda

    IPC分类号: H01S500

    摘要: In a distributed feedback semiconductor laser having at least an active layer and a diffraction grating on a semiconductor substrate and so constructed that a current is injected uniformly over an axial direction of a resonator, a bandgap wavelength of the active layer in the neighborhood of a light outputting end or a backward end opposite to the light outputting end, is shorter than that in the other region of the active layer along the axial direction of the resonator.

    摘要翻译: 在半导体衬底上至少具有有源层和衍射光栅的分布式反馈半导体激光器中,其结构使电流在谐振器的轴向上均匀地注入,有源层在光的附近的带隙波长 与光输出端相对的输出端或后端比沿着谐振器的轴向的有源层的另一区域的端部短。

    Semiconductor laser and process for production thereof
    10.
    发明授权
    Semiconductor laser and process for production thereof 失效
    半导体激光器及其制造方法

    公开(公告)号:US5982798A

    公开(公告)日:1999-11-09

    申请号:US898108

    申请日:1997-07-22

    申请人: Tetsuro Okuda

    发明人: Tetsuro Okuda

    摘要: In a semiconductor laser for analog modulation, intermodulation distortion at high temperatures and/or at high outputs is reduced. In a DC-PBH semiconductor laser, the width (Wm) of the electrode mesa 11 is set at 10 .mu.m or less, and the width of each recombination layer 2 is set at 0.1 .mu.m or more. Further, the distance between one end of the active layer 1 and one end of each current-blocking layer 5 is set at 0.01 .mu.m to 0.5 .mu.m.

    摘要翻译: 在用于模拟调制的半导体激光器中,降低了高温和/或高输出时的互调失真。 在DC-PBH半导体激光器中,将电极台面11的宽度(Wm)设定为10μm以下,将各复合层2的宽度设定为0.1μm以上。 此外,有源层1的一端与各阻流层5的一端之间的距离为0.01μm〜0.5μm。