摘要:
A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.
摘要:
Monolithic asymmetric optical waveguide grating resonators including an asymmetric resonant grating are disposed in a waveguide. A first grating strength is provided along a first grating length, and a second grating strength, higher than the first grating strength, is provided along a second grating length. In advantageous embodiments, the effective refractive index along first grating length is substantially matched to the effective refractive index along second grating length through proper design of waveguide and grating parameters. A well-matched effective index of refraction may permit the resonant grating to operate in a highly asymmetric single longitudinal mode (SLM). In further embodiments, an asymmetric monolithic DFB laser diode includes front and back grating sections having waveguide and grating parameters for highly asymmetric operation.
摘要:
A semiconductor laser includes a semiconductor substrate, an active region provided over the semiconductor substrate and having an active layer and a first diffraction grating, and a guiding region provided over the semiconductor substrate and having a guiding layer continuously extending from the active layer in an optical axis direction and a second diffraction grating continuously extending from the first diffraction grating in the optical axis direction. A grating period of the second diffraction grating is uniform, the first diffraction grating has a first part in which a grating period becomes uneven, and a grating formation density of the first diffraction grating is smaller than the grating formation density of the second diffraction grating.
摘要:
A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity.
摘要:
A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.
摘要:
A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.
摘要:
Embodiments of wavelength tunable lasers are disclosed. The wavelength tunable lasers include thermo-optic organic material that has an index of refraction that can quickly vary in response to changes in temperature. By controlling the temperature in the thermo-optic organic material through the use of heaters or coolers, the wavelength tunable lasers and the integrated optical components can be quickly and selectively tuned over a broad range of wavelengths with high spectral selectivity.
摘要:
A distributed feedback semiconductor laser includes a cavity extending in a cavity-axial direction and including a plurality of regions, and a plurality of waveguides with a diffraction grating and an active layer extending along the cavity-axial direction. The waveguides are formed in the regions, respectively, coupled to each other along the cavity-axial direction, and define different first and second polarization modes. The semiconductor laser further includes a light intensity distribution control portion formed in the cavity and having a function to relatively and locally strengthen light intensity distributions for the first and second polarization modes in the cavity-axial direction with a polarization dependency, and a control unit for independently stimulating at least two of the regions.
摘要:
A distributed feedback laser device comprises an optical waveguide having one end facet serving as a beam emission surface and the other end facet serving as a reflection surface, an active layer formed between the beam emission surface and the reflection surface, and a diffraction grating formed so as to extend along the active layer in the optical waveguide. The active layer has a first region located nearer to the beam emission surface than to the reflection surface and a second region located nearer to the reflection surface than to the beam emission surface. The first region is narrower in width than the second region. The diffraction grating has first and second portions located along the first and the second regions, respectively. The first portion is longer in pitch than the second portion.
摘要:
A distributed-feedback laser has a diffractive grating, an optical waveguide layer, and an active region. The optical waveguide layer has equivalent refractive indexes larger towards cavity end facets and smaller towards a device center portion along a cavity. The active region containing the optical waveguide layer has widths wider towards the cavity end facets and narrower towards the device center portion along the cavity. The optical waveguide layer has a uniform electric intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. In another arrangement, the optical waveguide layer formed on the diffractive grating has in its compositions longer wavelengths towards the cavity end facets and shorter wavelengths towards the cavity center portion along the cavity, whereby the optical waveguide layer has a uniform optical intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. The distributed-feedback laser provided is with improved analog modulation distortion characteristics.