公开(公告)号：US20120211351A1

公开(公告)日：2012-08-23

申请号：US12513361

申请日：2007-10-29

申请人： Atsushi Tomyo ,  Hirokazu Kaki ,  Eiji Takahashi

发明人： Atsushi Tomyo ,  Hirokazu Kaki ,  Eiji Takahashi

IPC分类号： C23C14/34

CPC分类号： H01L21/02631 ,  B82Y10/00 ,  C23C14/185 ,  C23C14/5853 ,  C23C14/586 ,  C23C16/24 ,  C23C16/509 ,  C23C16/56 ,  H01J37/321 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/0262 ,  H01L29/40114 ,  H01L29/42332 ,  H01L29/7881

摘要： Silicon dots are formed at a relatively low temperature, while suppressing occurrence of defects and clustering of silicon dots and damages caused by plasma, with high controllability of particle diameter and high reproducibility between substrates. Moreover, silicon dots and insulating film are formed at a relatively low temperature, with high controllability of the particle diameter of the silicon dots, high controllability of the thickness of the insulating film and high reproducibility between substrates. A method and an apparatus 1 for forming silicon dots (method and apparatus A for forming a substrate with silicon dots and insulating film) in which inductively coupled plasma is produced by an internal antenna 12 (22) with low inductance from a gas for forming silicon dots (a gas for forming insulating film); silicon dots SiD (insulating film F) are formed on a substrate S in the inductively coupled plasma; the substrate S is placed in a state that it is not exposed to unstable plasma when the plasma is in an unstable state; and the substrate S is exposed to stabilized plasma when the plasma is stabilized to start formation of the silicon dots (formation of insulating film).

摘要翻译： 在相对较低的温度下形成硅点，同时抑制硅点的缺陷发生和硅点聚集以及由等离子体引起的损伤，具有高的粒径可控性和基板之间的高再现性。 此外，在相对低的温度下形成硅点和绝缘膜，硅点的粒径可控性高，绝缘膜的厚度可控性高，基板间的再现性高。 用于形成硅点的方法和装置1（用于形成具有硅点和绝缘膜的衬底的方法和装置A），其中由用于形成硅的气体的低电感的内部天线12（22）产生电感耦合等离子体 点（用于形成绝缘膜的气体）; 在感应耦合等离子体的基板S上形成硅点SiD（绝缘膜F） 当等离子体处于不稳定状态时，衬底S被置于不暴露于不稳定的等离子体的状态; 并且当等离子体稳定以开始形成硅点（形成绝缘膜）时，将基板S暴露于稳定的等离子体。

公开(公告)号：US20070123004A1

公开(公告)日：2007-05-31

申请号：US11524449

申请日：2006-09-21

申请人： Eiji Takahashi ,  Hirokazu Kaki

发明人： Eiji Takahashi ,  Hirokazu Kaki

IPC分类号： H01L21/20

CPC分类号： C23C14/165 ,  C23C14/544 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32972 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631

摘要： A hydrogen gas is supplied into a deposition chamber accommodating a silicon sputter target and a deposition target object, a high-frequency power is applied to said gas to generate plasma exhibiting Hα/SiH* from 0.3 to 1.3 between an emission spectral intensity Hα of hydrogen atom radicals at a wavelength of 656 nm and an emission spectral intensity SiH* of silane radicals at a wavelength of 414 nm in plasma emission, and chemical sputtering is effected on the silicon sputter target by the plasma to form a crystalline silicon thin film on the deposition target object. Thereafter a high-frequency power is applied to a terminally treating gas to generate plasma for terminating treatment and the surface of the crystalline silicon thin film is terminally treated by the plasma in the terminally treating chamber.

摘要翻译： 将氢气供给到容纳硅溅射靶和沉积靶物体的沉积室中，向所述气体施加高频电力，以产生从0.3至1.3的表现出Halph / SiH *的等离子体的发射光谱强度Halph的氢 在等离子体发射下，在波长为656nm的原子团和硅烷自由基的发射光谱强度SiH *为414nm，通过等离子体在硅溅射靶上进行化学溅射，以在硅溅射靶上形成晶体硅薄膜 沉积目标物体。 此后，将高频电力施加到末端处理气体以产生用于终止处理的等离子体，并且通过末端处理室中的等离子体终止结晶硅薄膜的表面。

公开(公告)号：US20100260944A1

公开(公告)日：2010-10-14

申请号：US12739982

申请日：2008-10-14

申请人： Atsushi Tomyo ,  Hirokazu Kaki ,  Eiji Takahashi

发明人： Atsushi Tomyo ,  Hirokazu Kaki ,  Eiji Takahashi

IPC分类号： C23C16/505 ,  C23C16/24

CPC分类号： H01L21/02381 ,  C01B33/02 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/24 ,  C23C16/509 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/02658

摘要： A method for forming silicon dots which can form silicon dots at a relatively low temperature, with good controllability of the particle diameter of silicon dots depending on the particle diameter of silicon dots to be formed.The method for forming silicon dots comprises producing inductively coupled plasma from a gas for forming silicon dots provided within the plasma producing chamber by applying a high-frequency power to an antenna with reduced inductance placed within the plasma producing chamber to form silicon dots on a substrate S disposed within the chamber in the presence of the inductively coupled plasma. Conditions for a pretreatment of the substrate prior to the formation of silicon dots, the temperature of the substrate in forming silicon dots and the gas pressure in the plasma producing chamber during the formation of silicon dots are controlled depending on the particle diameter of the silicon dots.

摘要翻译： 一种在相对较低的温度下形成硅点的硅点的形成方法，具有良好的硅点粒径的可控性，这取决于待形成的硅点的粒径。 形成硅点的方法包括：通过向位于等离子体产生室内的具有减小的电感的天线施加高频电力，在等离子体产生室内形成硅点的气体中产生电感耦合等离子体，以在衬底上形成硅点 S在电感耦合等离子体的存在下设置在腔室内。 在形成硅点之前对基板进行预处理的条件，形成硅点的基板的温度和形成硅点期间的等离子体产生室中的气体压力根据硅点的粒径来控制 。

公开(公告)号：US07763153B2

公开(公告)日：2010-07-27

申请号：US11524449

申请日：2006-09-21

申请人： Eiji Takahashi ,  Hirokazu Kaki

发明人： Eiji Takahashi ,  Hirokazu Kaki

IPC分类号： C23C14/00

CPC分类号： C23C14/165 ,  C23C14/544 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32972 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02631

摘要： A hydrogen gas is supplied into a deposition chamber accommodating a silicon sputter target and a deposition target object, a high-frequency power is applied to said gas to generate plasma exhibiting Hα/SiH* from 0.3 to 1.3 between an emission spectral intensity Hα of hydrogen atom radicals at a wavelength of 656 nm and an emission spectral intensity SiH* of silane radicals at a wavelength of 414 nm in plasma emission, and chemical sputtering is effected on the silicon sputter target by the plasma to form a crystalline silicon thin film on the deposition target object. Thereafter a high-frequency power is applied to a terminally treating gas to generate plasma for terminating treatment and the surface of the crystalline silicon thin film is terminally treated by the plasma in the terminally treating chamber.

摘要翻译： 将氢气供给到容纳硅溅射靶和沉积靶物体的沉积室中，向所述气体施加高频电力，以产生0.3〜1.3的Hα/ SiH *等离子体的等离子体的发射光谱强度Hα 在等离子体发射下，在波长为656nm的原子团和硅烷自由基的发射光谱强度SiH *为414nm，通过等离子体在硅溅射靶上进行化学溅射，以在硅溅射靶上形成晶体硅薄膜 沉积目标物体。 此后，将高频电力施加到末端处理气体以产生用于终止处理的等离子体，并且通过末端处理室中的等离子体终止结晶硅薄膜的表面。