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    (AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND
    1.
    发明申请
    (AMIDE AMINO ALKANE) METAL COMPOUND, METHOD OF MANUFACTURING METAL-CONTAINING THIN FILM USING SAID METAL COMPOUND 有权
    （AMIDE AMINO ALKANE）金属化合物，使用含金属化合物制造含金属薄膜的方法

    公开(公告)号：US20130273250A1

    公开(公告)日：2013-10-17

    申请号：US13882824

    申请日：2011-11-02

    申请人： Osamu Fujimura ,  Hiroki Kanato ,  Masashi Shirai ,  Hiroshi Nihei

    发明人： Osamu Fujimura ,  Hiroki Kanato ,  Masashi Shirai ,  Hiroshi Nihei

    IPC分类号： H01L51/00 ,  C07F15/06 ,  C07F5/00 ,  C07F3/06 ,  C07F15/02 ,  C07F15/04 ,  C07F3/02 ,  C07F13/00

    CPC分类号： H01L51/0083 ,  C07C211/65 ,  C07F3/02 ,  C07F3/06 ,  C07F5/003 ,  C07F13/005 ,  C07F15/025 ,  C07F15/045 ,  C07F15/065 ,  C23C16/18 ,  C23C16/403 ,  C23C16/407 ,  H01L51/0077 ,  H01L51/0084 ,  H01L51/0089 ,  H01L51/0092

    摘要： The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.

    摘要翻译： 本发明涉及由式（1）表示的（酰胺氨基烷烃）金属化合物：其中M表示金属原子; R1表示碳原子数为1〜6的直链状，支链状或环状的烷基。 R 2和R 3可以彼此相同或不同，并且各自独立地表示具有1至3个碳原子的直链或支链烷基，或者R 2和R 3可以一起形成取代或未取代的5-或6-元环 与它们所结合的氮原子一起; Z表示碳原子数1〜10的直链状或支链状的亚烷基（其一部分可以形成环）。 n表示与金属（M）的化合价相同的配体数，表示1〜3的整数。 条件是不包括其中M为Li（锂），Be（铍），Ge（锗）或Nd（钕）的金属化合物; 其中M为Mg（镁）和R1为甲基的金属化合物被排除; 其中M为Zn（锌）和R1为甲基的金属化合物被排除; 其中M为Bi（铋）和R 1为叔丁基的金属化合物被排除; 并且在n为2或更大的情况下，两个或多个配体可以彼此相同或不同; 以及使用该金属化合物制造含金属薄膜的方法。

    ORGANORUTHENIUM COMPLEX, AND METHOD FOR PRODUCTION OF RUTHENIUM THIN FILM USING THE RUTHENIUM COMPLEX
    2.
    发明申请
    ORGANORUTHENIUM COMPLEX, AND METHOD FOR PRODUCTION OF RUTHENIUM THIN FILM USING THE RUTHENIUM COMPLEX 有权
    有机金属复合材料，以及使用金属复合材料制造薄膜薄膜的方法

    公开(公告)号：US20100055313A1

    公开(公告)日：2010-03-04

    申请号：US12375278

    申请日：2007-07-26

    申请人： Takumi Kadota ,  Chihiro Hasegawa ,  Hiroki Kanato ,  Hiroshi Nihei

    发明人： Takumi Kadota ,  Chihiro Hasegawa ,  Hiroki Kanato ,  Hiroshi Nihei

    IPC分类号： C23C16/08 ,  C07F15/00

    CPC分类号： C07C49/92 ,  C07C45/77 ,  C07F15/0046 ,  C23C16/18

    摘要： An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

    摘要翻译： 由通式（1-1），双（乙酰丙酮）（1,5-己二烯）钌和双（乙酰丙酮）（1,3-戊二烯）钌的钌络合物表示的有机钌配合物具有低熔点，对水分的稳定性优异， 空气和热量，并且适合于通过CVD方法形成膜。 （1-1）其中X表示由通式（1-2）表示的基团; Y表示由通式（1-2）表示的基团或具有1〜8个碳原子的直链或支链烷基; Z表示氢原子或碳原子数1〜4的烷基。 L表示具有至少两个双键的不饱和烃化合物：（1-2）其中Ra和Rb独立地表示具有1至5个碳原子的直链或支链烷基。

    Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex
    3.
    发明授权
    Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex 有权
    有机钌络合物，以及使用钌络合物制造钌薄膜的方法

    公开(公告)号：US08304567B2

    公开(公告)日：2012-11-06

    申请号：US12375278

    申请日：2007-07-26

    申请人： Takumi Kadota ,  Chihiro Hasegawa ,  Hiroki Kanato ,  Hiroshi Nihei

    发明人： Takumi Kadota ,  Chihiro Hasegawa ,  Hiroki Kanato ,  Hiroshi Nihei

    IPC分类号： C07F15/00 ,  C23C16/00

    CPC分类号： C07C49/92 ,  C07C45/77 ,  C07F15/0046 ,  C23C16/18

    摘要： An organoruthenium complex represented by the general formula (1-1), bis(acetylacetonato)(1,5-hexadiene)ruthenium and bis(acetylacetonato)(1,3-pentadiene)ruthenium have low melting points, show excellent stability against moisture, air and heat, and are suitable for the film formation by a CVD method. (1-1) wherein X represents a group represented by the general formula (1-2); Y represent a group represented by the general formula (1-2) or a linear or branched alkyl group having 1 to 8 carbon atoms; Z represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and L represents an unsaturated hydrocarbon compound having at least two double bonds: (1-2) wherein Ra and Rb independently represent a linear or branched alkyl group having 1 to 5 carbon atoms.

    摘要翻译： 由通式（1-1），双（乙酰丙酮）（1,5-己二烯）钌和双（乙酰丙酮）（1,3-戊二烯）钌的钌络合物表示的有机钌配合物具有低熔点，对水分的稳定性优异， 空气和热量，并且适合于通过CVD方法形成膜。 （1-1）其中X表示由通式（1-2）表示的基团; Y表示由通式（1-2）表示的基团或具有1〜8个碳原子的直链或支链烷基; Z表示氢原子或碳原子数1〜4的烷基。 L表示具有至少两个双键的不饱和烃化合物：（1-2）其中Ra和Rb独立地表示具有1至5个碳原子的直链或支链烷基。

    (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
    4.
    发明授权
    (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound 有权
    （酰胺氨基烷烃）金属化合物，使用所述金属化合物制造含金属薄膜的方法

    公开(公告)号：US08871304B2

    公开(公告)日：2014-10-28

    申请号：US13882824

    申请日：2011-11-02

    申请人： Osamu Fujimura ,  Hiroki Kanato ,  Masashi Shirai ,  Hiroshi Nihei

    发明人： Osamu Fujimura ,  Hiroki Kanato ,  Masashi Shirai ,  Hiroshi Nihei

    IPC分类号： H01L51/00 ,  C07F15/00 ,  C07F13/00 ,  C07F5/00 ,  C07F3/00 ,  C07F15/06 ,  C07F15/04 ,  C07F15/02 ,  C07F3/02 ,  C07F3/06

    CPC分类号： H01L51/0083 ,  C07C211/65 ,  C07F3/02 ,  C07F3/06 ,  C07F5/003 ,  C07F13/005 ,  C07F15/025 ,  C07F15/045 ,  C07F15/065 ,  C23C16/18 ,  C23C16/403 ,  C23C16/407 ,  H01L51/0077 ,  H01L51/0084 ,  H01L51/0089 ,  H01L51/0092

    摘要： The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom; R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound; Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); and n represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded; the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded; the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded; the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; and in cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.

    摘要翻译： 本发明涉及由式（1）表示的（酰胺氨基烷烃）金属化合物：其中M表示金属原子; R1表示碳原子数为1〜6的直链状，支链状或环状的烷基。 R 2和R 3可以彼此相同或不同，并且各自独立地表示具有1至3个碳原子的直链或支链烷基，或者R 2和R 3可以一起形成取代或未取代的5-或6-元环 与它们所结合的氮原子一起; Z表示碳原子数1〜10的直链状或支链状的亚烷基（其一部分可以形成环）。 n表示与金属（M）的化合价相同的配体数，表示1〜3的整数。 条件是不包括其中M为Li（锂），Be（铍），Ge（锗）或Nd（钕）的金属化合物; 其中M为Mg（镁）和R1为甲基的金属化合物被排除; 其中M为Zn（锌）和R1为甲基的金属化合物被排除; 其中M为Bi（铋）和R 1为叔丁基的金属化合物被排除; 并且在n为2或更大的情况下，两个或多个配体可以彼此相同或不同; 以及使用该金属化合物制造含金属薄膜的方法。