公开(公告)号：US20190191082A1

公开(公告)日：2019-06-20

申请号：US16217536

申请日：2018-12-12

申请人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

发明人： Hiroyasu Uehara ,  Masakazu Terauchi ,  Masashi Miyata ,  Hiroshi Kano ,  Akira Nakano ,  Takeyoshi Nishimura

IPC分类号： H04N5/232 ,  H04N5/262 ,  H04N5/347

摘要： An image processing apparatus includes processing circuitry. The processing circuitry is configured to detect a positional shift amount of each of a plurality of images; select a composite target image from the plurality of images based on the detected positional shift amount; and obtain a composite image based on the positional shift amount and the selected composite target image.

公开(公告)号：US09716391B2

公开(公告)日：2017-07-25

申请号：US13614638

申请日：2012-09-13

申请人： Hiroshi Kano

发明人： Hiroshi Kano

IPC分类号： H02J7/00 ,  H01M14/00 ,  H02J7/34 ,  B60L11/18 ,  H01M2/10

CPC分类号： B60L11/1864 ,  B60L11/1842 ,  B60L11/1879 ,  H01M2/105 ,  H01M2/1077 ,  H01M2/1094 ,  H01M10/0525 ,  H01M2200/00 ,  H01M2220/20 ,  H01M2220/30 ,  H02J7/0013 ,  H02J7/0027 ,  H02J7/0044 ,  H02J7/34 ,  Y02E60/721 ,  Y02T10/7005 ,  Y02T10/7061 ,  Y02T10/7072 ,  Y02T90/121 ,  Y02T90/128 ,  Y02T90/14 ,  Y02T90/163 ,  Y04S10/126

摘要： There is provided a battery holder including: a plurality of battery cell receiving sections for receiving a battery cell. A deformation section elastically deformed depending on transmission of external impact, and a space section for allowing the deformation section to be elastically deformed are formed between a peripheral surface of one battery cell receiving section and a peripheral surface of another battery cell receiving section.

公开(公告)号：US09634304B2

公开(公告)日：2017-04-25

申请号：US12648760

申请日：2009-12-29

申请人： Hiroshi Kano

发明人： Hiroshi Kano

IPC分类号： H01M10/0525 ,  H01M2/10 ,  H01M10/42

CPC分类号： H01M2/1061 ,  H01M10/0525 ,  H01M10/425

摘要： A battery pack includes a battery cell, a circuit board, and a holder. The battery cell includes a battery device covered with a laminate film. The circuit board is connected to the battery cell. The holder includes a cell holder that covers the battery cell and a circuit board holder that covers the circuit board. In battery pack, the circuit board holder covering the circuit board is arranged in a space formed above a terrace portion of the battery cell covered with the cell holder.

公开(公告)号：US08437180B2

公开(公告)日：2013-05-07

申请号：US12795933

申请日：2010-06-08

申请人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

发明人： Yutaka Higo ,  Masanori Hosomi ,  Minoru Ikarashi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Kazutaka Yamane ,  Tetsuya Yamamoto ,  Kazuhiro Bessho

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

摘要翻译： 存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。

公开(公告)号：US08169818B2

公开(公告)日：2012-05-01

申请号：US12937325

申请日：2009-04-15

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/1675 ,  G11C11/1693 ,  H01L43/08 ,  Y10S977/935

摘要： A recording method for a magnetic memory device that includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and applying the one or more sub-pulses after the one or more main pulses, the one or more main pulses each being a pulse that has a sufficient pulse height and pulse width to record information, the one or more sub-pulses each being a pulse that satisfies at least one of conditions that a pulse width is shorter than that of the one or more main pulses and that a pulse height is smaller than that of the one or more main pulses.

摘要翻译： 一种用于磁存储器件的记录方法，包括：在记录一条信息时，在相同方向上应用一个或多个主脉冲和一个或多个子脉冲，并在所述一个或多个主脉冲之后施加所述一个或多个子脉冲 脉冲，所述一个或多个主脉冲各自是具有足够的脉冲高度和脉冲宽度以记录信息的脉冲，所述一个或多个子脉冲各自是满足脉冲宽度比脉冲宽度短的条件中的至少一个的脉冲 一个或多个主脉冲的脉冲高度和一个或多个主脉冲的脉冲高度小。

公开(公告)号：US08072789B2

公开(公告)日：2011-12-06

申请号：US12629660

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/00 ,  G11C11/22 ,  G11C11/14 ,  G11C11/04

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

摘要翻译： 提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化 使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。 堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。

公开(公告)号：US20110293998A1

公开(公告)日：2011-12-01

申请号：US13113611

申请日：2011-05-23

申请人： Bunya Sato ,  Tatsuya Adachi ,  Hiroshi Kano ,  Tsutomu Aoyama ,  Tsuyoshi Toukairin ,  Akira Sanpei

发明人： Bunya Sato ,  Tatsuya Adachi ,  Hiroshi Kano ,  Tsutomu Aoyama ,  Tsuyoshi Toukairin ,  Akira Sanpei

IPC分类号： H01M2/20 ,  H01R13/02 ,  H01M2/10

CPC分类号： H01M2/1077 ,  H01M2/022 ,  H01M2/206 ,  H01M10/613 ,  H01M10/625 ,  H01M10/643 ,  H01M10/6554

摘要： In one example embodiment, a battery unit includes a battery case, and a plurality of battery blocks stored in the battery case. The plurality of battery blocks are electrically connected together in series. In one example embodiment, a first plurality of the battery blocks form a first column and are arranged in a side-to-side configuration. In one example embodiment, a second plurality of the battery blocks form a second column and are arranged in an end-to-end configuration which is different from the side-to-side configuration.

摘要翻译： 在一个示例性实施例中，电池单元包括电池壳体和存储在电池壳体中的多个电池块。 多个电池块串联电连接在一起。 在一个示例性实施例中，第一多个电池块形成第一列并且被布置成一个侧面配置。 在一个示例性实施例中，第二多个电池块形成第二列，并且以与端对侧配置不同的端对端配置布置。

公开(公告)号：US20110032744A1

公开(公告)日：2011-02-10

申请号：US12937325

申请日：2009-04-15

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/22

CPC分类号： H01L27/228 ,  G11C11/1675 ,  G11C11/1693 ,  H01L43/08 ,  Y10S977/935

摘要： [Object] To provide a recording method for a magnetic memory device including a recording layer that holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, the same level of error rate as in a case where a write pulse a little higher than the inversion threshold value is applied.[Solving Means] A recording method for a magnetic memory device includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and applying the one or more sub-pulses after the one or more main pulses, the one or more main pulses each being a pulse that has a sufficient pulse height and pulse width to record information, the one or more sub-pulses each being a pulse that satisfies at least one of conditions that a pulse width is shorter than that of the one or more main pulses and that a pulse height is smaller than that of the one or more main pulses.

摘要翻译： 为了提供一种磁存储器件的记录方法，该磁存储器件包括一个保存作为磁体的磁化方向的信息的记录层和相对于记录层设置的具有绝缘层的磁化参考层， 通过经由绝缘层在记录层和磁化参考层之间流动的电流记录信息的磁存储器件，即使当施加显着高于反转阈值的写入脉冲时，该记录方法也能够保持相同 与施加写入脉冲比反转阈值稍高的情况一样的错误率级别。 解决方案一种用于磁存储器件的记录方法包括当在相同方向记录一条信息时，应用一个或多个主脉冲和一个或多个子脉冲，并在该一个信号之后施加一个或多个子脉冲 或更多个主脉冲，所述一个或多个主脉冲各自是具有足够的脉冲高度和脉冲宽度以记录信息的脉冲，所述一个或多个子脉冲各自是满足以下条件中的至少一个的脉冲：脉冲宽度 比一个或多个主脉冲短，并且脉冲高度小于一个或多个主脉冲的脉冲高度。

公开(公告)号：US07660153B2

公开(公告)日：2010-02-09

申请号：US12014478

申请日：2008-01-15

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/161 ,  G11C11/1659

摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

摘要翻译： 提供存储器件。 存储器件包括存储层和固定磁化层。 存储层基于磁性材料的磁化状态保留信息。 通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。 信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。 由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

公开(公告)号：US07623204B2

公开(公告)日：2009-11-24

申请号：US11504026

申请日：2006-08-15

申请人： Hiroshi Sakurai ,  Hidenori Ikeno ,  Yuichi Yamaguchi ,  Hiroshi Kano

发明人： Hiroshi Sakurai ,  Hidenori Ikeno ,  Yuichi Yamaguchi ,  Hiroshi Kano

IPC分类号： G02F1/1343 ,  G02F1/1335

CPC分类号： G02F1/136227 ,  G02F1/133553 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2202/103 ,  G02F2203/02 ,  H01L27/1248 ,  H01L27/13

摘要： A reflection type liquid crystal display device having excellent display capability even if the number of the photolithography process is reduced and a process for producing the device. A process includes the steps of (a) forming a source/drain wiring by using a first mask; (b) forming a thin film transistor region and gate wiring by using a second mask; (c) forming an opening for a transistor, in a passivation film by using a third mask; (d) forming a rough surface of the interlayer insulating film and to form an opening for the transistor by using a fourth mask by halftone exposure, and (e) forming a reflective metal which extend through the respective openings for the transistor in the passivation film and the interlayer insulating film so that it is electrically connected to the source wiring by using a fifth mask.

摘要翻译： 即使减少光刻处理的数量，也具有优异的显示能力的反射型液晶显示装置及其制造方法。 一种方法包括以下步骤：（a）通过使用第一掩模形成源极/漏极布线; （b）通过使用第二掩模形成薄膜晶体管区域和栅极布线; （c）通过使用第三掩模在钝化膜中形成用于晶体管的开口; （d）形成层间绝缘膜的粗糙表面，并通过半色调曝光使用第四掩模形成用于晶体管的开口，以及（e）形成延伸穿过用于钝化膜中的晶体管的各个开口的反射金属 和层间绝缘膜，使其通过使用第五掩模与源极配线电连接。