公开(公告)号：US20110155232A1

公开(公告)日：2011-06-30

申请号：US13061020

申请日：2009-08-28

申请人： Hirota Uchida ,  Tetsushi Fujinaga ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Hirota Uchida ,  Tetsushi Fujinaga ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/077 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit composed of a crystalline-silicon-based thin film, in a reduced-pressure atmosphere; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer which was exposed to an air atmosphere.

摘要翻译： 一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层， 型半导体层，其在减压气氛中构成由结晶硅系薄膜构成的第二光电转换单元; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层。

公开(公告)号：US20110204466A1

公开(公告)日：2011-08-25

申请号：US13061018

申请日：2009-08-28

申请人： Shinichi Asahina ,  Hirota Uchida ,  Shin Asari ,  Masanori Hashimoto ,  Tetsushi Fujinaga ,  Tadamasa Kobayashi ,  Masafumi Wakai ,  Kenichi Imakita ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Shinichi Asahina ,  Hirota Uchida ,  Shin Asari ,  Masanori Hashimoto ,  Tetsushi Fujinaga ,  Tadamasa Kobayashi ,  Masafumi Wakai ,  Kenichi Imakita ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L31/105 ,  H01L31/18 ,  C23C16/22 ,  C23C16/50

CPC分类号： H01L31/077 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.

摘要翻译： 一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层， 型半导体层构成第二光电转换单元，在彼此不同的减压室中; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二光电转换单元的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层， 在同一减压室内。