公开(公告)号：US20110204466A1

公开(公告)日：2011-08-25

申请号：US13061018

申请日：2009-08-28

申请人： Shinichi Asahina ,  Hirota Uchida ,  Shin Asari ,  Masanori Hashimoto ,  Tetsushi Fujinaga ,  Tadamasa Kobayashi ,  Masafumi Wakai ,  Kenichi Imakita ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Shinichi Asahina ,  Hirota Uchida ,  Shin Asari ,  Masanori Hashimoto ,  Tetsushi Fujinaga ,  Tadamasa Kobayashi ,  Masafumi Wakai ,  Kenichi Imakita ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L31/105 ,  H01L31/18 ,  C23C16/22 ,  C23C16/50

CPC分类号： H01L31/077 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.

摘要翻译： 一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层， 型半导体层构成第二光电转换单元，在彼此不同的减压室中; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二光电转换单元的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层， 在同一减压室内。

公开(公告)号：US20110120553A1

公开(公告)日：2011-05-26

申请号：US13001755

申请日：2009-07-03

申请人： Miwa Watai ,  Kazuya Saito ,  Takashi Komatsu ,  Susumu Sakio ,  Masafumi Wakai ,  Shunji Kuroiwa

发明人： Miwa Watai ,  Kazuya Saito ,  Takashi Komatsu ,  Susumu Sakio ,  Masafumi Wakai ,  Shunji Kuroiwa

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  Y02E10/548

摘要： A method for manufacturing a solar cell, includes a scribing step in which grooves electrically-separating a photoelectric converter into a plurality of compartment sections are formed after the photoelectric converter is formed on a substrate by stacking a first-electrode layer, a photoelectric conversion layer, and a second-electrode layer in this order; a first groove, a second groove, a third groove, and a fourth groove are formed in the scribing step; the method including an insulating-layer forming step in which an insulating layer is formed after the scribing step and a wiring layer forming step in which a wiring layer is formed; the wiring layer passes from the first-electrode layer that is exposed at a bottom face of the second groove, through the inside of the second groove and a surface of the insulating layer, to a surface of the second-electrode layer that is disposed so as to be lateral to the fourth groove opposite to the second groove; and the wiring layer electrically connects the plurality of compartment sections to each other.

摘要翻译： 一种太阳能电池的制造方法，其特征在于，在将所述光电转换器形成在基板上之后，通过层叠第一电极层，光电转换层 ，和第二电极层。 在划线步骤中形成第一槽，第二槽，第三槽和第四槽; 该方法包括在划线步骤之后形成绝缘层的绝缘层形成步骤和其中形成布线层的布线层形成步骤; 布线层从第二沟槽的底面露出的第一电极层通过第二沟槽的内部和绝缘层的表面通过到设置在第二沟槽的第二电极层的表面上 作为与第二凹槽相对的第四凹槽的横向; 并且所述布线层将所述多个隔室部彼此电连接。

公开(公告)号：US20120015473A1

公开(公告)日：2012-01-19

申请号：US13146624

申请日：2010-01-29

申请人： Hiroto Uchida ,  Tetsushi Fujinaga ,  Masafumi Wakai ,  Tadamasa Kobayashi ,  Yoshinobu Ue ,  Kyuzo Nakamura ,  Shin Asari ,  Kazuya Saito ,  Koichi Matsumoto ,  Yasuo Shimizu ,  Katsuhiko Mori

发明人： Hiroto Uchida ,  Tetsushi Fujinaga ,  Masafumi Wakai ,  Tadamasa Kobayashi ,  Yoshinobu Ue ,  Kyuzo Nakamura ,  Shin Asari ,  Kazuya Saito ,  Koichi Matsumoto ,  Yasuo Shimizu ,  Katsuhiko Mori

IPC分类号： H01L31/0352

CPC分类号： C23C16/54 ,  C23C16/24 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer.

摘要翻译： 光电转换装置的制造方法制造光电转换装置，其中第一光电转换单元和第二光电转换单元依次层叠在形成于基板上的透明导电膜上。 该方法包括：在多个第一等离子体CVD反应室中形成第一p型半导体层，第一i型半导体层，第一n型半导体层和第二p型半导体层; 将第二p型半导体层暴露于空气气氛中; 在形成第二i型半导体层之前，将第二等离子体CVD反应室内的p型杂质气体供给; 在第二等离子体CVD反应室中在暴露于空气气氛的第二p型半导体层上形成第二i型半导体层; 以及在第二i型半导体层上形成第二n型半导体层。