公开(公告)号：US06890783B2

公开(公告)日：2005-05-10

申请号：US10242011

申请日：2002-09-12

申请人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

发明人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/84 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L31/036

CPC分类号： G02F1/134363

摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤2中，层叠由非晶硅层和n + +非晶硅层构成的栅绝缘层和半导体层，以提供TFT部分的半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极， 通过蚀刻除去沟道间隙的+非晶硅层。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

公开(公告)号：US06632696B2

公开(公告)日：2003-10-14

申请号：US09745657

申请日：2000-12-20

申请人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

发明人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC分类号： H01L2100

CPC分类号： G02F1/134363

摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤 1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到 提供TFT部分的半导体层。 在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸 形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。 在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。