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    Manufacturing method of active matrix substrate
    3.
    发明授权
    Manufacturing method of active matrix substrate 有权
    有源矩阵基板的制造方法

    公开(公告)号：US06740596B2

    公开(公告)日：2004-05-25

    申请号：US09903244

    申请日：2001-07-11

    申请人： Takasuke Hayase ,  Hiroaki Tanaka ,  Shusaku Kido ,  Toshihiko Harano

    发明人： Takasuke Hayase ,  Hiroaki Tanaka ,  Shusaku Kido ,  Toshihiko Harano

    IPC分类号： H01L21302

    CPC分类号： H01L29/66765 ,  G02F1/136204 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/78633

    摘要： The photolithography processes for connecting the first conductive film pattern, which is a lower layer such as a gate electrode of a TFT, to a second conductive film pattern, which is an upper layer such as a source/drain electrode of a TFT are reduced by utilizing laminated films and a resist pattern formed thereon having different film thicknesses. Laminated films constituting the source/drain electrode are formed by depositing films on an insulating substrate on which the first conductive film pattern is formed, and the resist pattern is formed on the top layer of the laminated films, and then utilizing the film thickness difference of the resist pattern and the film composition of the laminated films, the short circuited wiring between the gate electrode and the source/drain electrode for an Electro-Static-Discharge protection circuit of the active matrix substrate can be formed by less photolithography processes than that in the manufacturing of the conventional active matrix substrate.

    摘要翻译： 将作为诸如TFT的栅电极的下层的第一导电膜图案与作为诸如TFT的源/漏电极的上层的第二导电膜图案连接的光刻工艺被减少 利用层叠膜和形成在其上的具有不同膜厚度的抗蚀剂图案。 构成源极/漏极的叠层膜通过在其上形成有第一导电膜图案的绝缘基板上沉积膜形成，并且在层压膜的顶层上形成抗蚀剂图案，然后利用膜厚度差 层叠膜的抗蚀剂图案和膜组成，有源矩阵基板的静电放电保护电路的栅极电极和源极/漏极之间的短路布线可以通过较少的光刻工艺形成， 常规有源矩阵基板的制造。

    Active matrix substrate and manufacturing method therefor
    9.
    发明授权
    Active matrix substrate and manufacturing method therefor 有权
    有源矩阵基板及其制造方法

    公开(公告)号：US06674093B1

    公开(公告)日：2004-01-06

    申请号：US09695321

    申请日：2000-10-25

    申请人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

    发明人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

    IPC分类号： H01L29786

    CPC分类号： H01L27/12 ,  G02F1/134363 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288

    摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.

    摘要翻译： 沟道保护型有源矩阵基板，具有通过绝缘膜从一层到另一层隔离的栅电极，漏电极和像素电极。 有源矩阵基板由四个掩模制成。 栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层（图6的102）和TFF区域。 经由形成为上层的第一钝化膜（图6的105）由第一钝化膜（图6的105）形成漏极电极层（图6的106）。 在其上形成的第二钝化膜（图6的107）中，其穿过第一和第二钝化膜的开口以及通过第二钝化膜的开口。 布线连接层由作为最上层设置的ITO（图6的108）形成。 在像素电极中设置存储电容单元，该第一钝化膜和第二钝化膜夹在栅电极和形成为相对于栅电极的共层的电极层之间。

    Active matrix addressing liquid-crystal display device
    10.
    发明授权
    Active matrix addressing liquid-crystal display device 有权
    有源矩阵寻址液晶显示装置

    公开(公告)号：US07663146B2

    公开(公告)日：2010-02-16

    申请号：US10028778

    申请日：2001-12-28

    申请人： Hiroaki Tanaka ,  Akira Fujita ,  Shigeru Kimura ,  Akitoshi Maeda ,  Takasuke Hayase

    发明人： Hiroaki Tanaka ,  Akira Fujita ,  Shigeru Kimura ,  Akitoshi Maeda ,  Takasuke Hayase

    IPC分类号： G02F1/1343

    CPC分类号： H01L29/4908 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L29/458

    摘要： An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.

    摘要翻译： 提供了一种有源矩阵寻址LCD器件，其具有形成有导电线的有源矩阵基板，其抑制了AI小丘，而不会使线的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了 连接可靠性。 该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al文件可以用Al合金代替。