摘要:
In an ion bombardment treatment apparatus (1A) and a cleaning method, base materials (W) to be treated are held by a work table (11) so as to be placed between a filament (3) and an anode (4) in a vacuum chamber (2), and a discharge power supply (5) which can generate a glow discharge upon the application of a potential difference between the filament (3) and the anode (4) is insulated from the vacuum chamber (2). In the ion bombardment treatment apparatus (1A) and the cleaning method, the efficiency of the cleaning of a base material can be improved and a power supply can be controlled stably.
摘要:
An arc evaporation source having fast film-forming speed includes: at least one circumference magnet surrounding the circumference of a target, wherein the magnetization direction of the magnet runs orthogonal to the target surface; a non-ring shaped first permanent magnet on the target's rear surface side has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the target's surface; a non-ring shaped second permanent magnet arranged either on the rear surface side of the first permanent magnet or between the first permanent magnet and the target, so as to leave a gap from the first permanent magnet, has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the surface of the target; and a magnetic body between the first permanent magnet and the second permanent magnet.
摘要:
In an ion bombardment treatment apparatus (1A) and a cleaning method, base materials (W) to be treated are held by a work table (11) so as to be placed between a filament (3) and an anode (4) in a vacuum chamber (2), and a discharge power supply (5) which can generate a glow discharge upon the application of a potential difference between the filament (3) and the anode (4) is insulated from the vacuum chamber (2). In the ion bombardment treatment apparatus (1A) and the cleaning method, the efficiency of the cleaning of a base material can be improved and a power supply can be controlled stably.
摘要:
An arc evaporation source having fast film-forming speed includes: at least one circumference magnet surrounding the circumference of a target, wherein the magnetization direction of the magnet runs orthogonal to the target surface; a non-ring shaped first permanent magnet on the target's rear surface side has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the target's surface; a non-ring shaped second permanent magnet arranged either on the rear surface side of the first permanent magnet or between the first permanent magnet and the target, so as to leave a gap from the first permanent magnet, has a polarity in the same direction as the circumference magnet, and is arranged so that its magnetization direction runs orthogonal to the surface of the target; and a magnetic body between the first permanent magnet and the second permanent magnet.
摘要:
The present invention relates to an arc ion plating device utilizing a vacuum arc discharge to be utilized for the surface process of works and to an arc ion plating system provided with the above-mentioned device, and the present invention offers the device and the system which are able to realize extremely high productivity by an efficient handling of works. The device according to the present invention comprises a rod-shaped evaporation source and works to be coated with a film being disposed so as to surround the rod-shaped evaporation source, The device is so constituted that the works can be moved relative to the rod-shaped evaporation source in the axial direction of the rod-shaped evaporation source.