公开(公告)号：US20140131882A1

公开(公告)日：2014-05-15

申请号：US13674096

申请日：2012-11-12

申请人： Hong Kong Applied Science and Technology Institute Company Limited

发明人： Pui Chung Simon LAW ,  Bin XIE ,  Dan YANG

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/562 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/82 ,  H01L2224/02313 ,  H01L2224/02351 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05569 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/244 ,  H01L2224/2919 ,  H01L2224/73253 ,  H01L2224/9202 ,  H01L2224/92242 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2224/0231 ,  H01L2224/03 ,  H01L2224/05552

摘要： This invention discloses a through-silicon via (TSV) structure for providing an electrical path between a first-side surface and a second-side surface of a silicon chip, and a method for fabricating the structure. In one embodiment, the TSV structure comprises a via penetrated through the chip from the first-side surface to the second-side surface, providing a first end on the first-side surface and a second end on the second-side surface. A local isolation layer is deposited on the via's sidewall and on a portion of the first-side surface surrounding the first end. The TSV structure further comprises a plurality of substantially closely-packed microstructures arranged to form a substantially non-random pattern and fabricated on at least the portion of the first-side surface covered by the local isolation layer for promoting adhesion of the local isolation layer to the chip. A majority of the microstructures has a depth of at least 1 μm.

摘要翻译： 本发明公开了一种用于在硅芯片的第一面表面和第二表面之间提供电路的贯通硅通孔（TSV）结构及其制造方法。 在一个实施例中，TSV结构包括穿过芯片从第一侧表面到第二侧表面的通孔，在第一侧表面上提供第一端和在第二侧表面上提供第二端。 局部隔离层沉积在通孔的侧壁上，并在第一端的围绕第一端的部分上沉积。 TSV结构还包括多个基本上紧密堆积的微结构，其被布置成形成基本上非随机图案，并且制造在被局部隔离层覆盖的至少部分第一侧表面上，以促进局部隔离层与 芯片。 大部分微结构具有至少1μm的深度。

公开(公告)号：US20210231991A1

公开(公告)日：2021-07-29

申请号：US16750087

申请日：2020-01-23

申请人： Hong Kong Applied Science and Technology Institute Company Limited

发明人： Ming Wai Alwin TAM ,  Xiaohan WANG ,  Zhuanyun ZHANG ,  Xiuling ZHU ,  Kin Lung Kenny CHAN

IPC分类号： G02F1/139 ,  G02B27/01 ,  G02B27/28 ,  G02F1/01

摘要： Polarization-independent focusing is advantageously achieved by a multifocal system having a polarization beam splitter (PBS) to split an unpolarized light beam into two orthogonally linearly-polarized (LP) light beams. The two LP light beams are reflected by mirrors to travel in opposite directions and enter into a variable-focusing module at two ends thereof, respectively. The module includes waveplates to convert the LP light beams into two circularly-polarized (CP) light beams at both ends of an optical assembly. The optical assembly is formed with a stack of birefringent optical elements including at least one geometric phase lens and one polarization selector that may be electrically modulated to select the optical power in focusing the two CP light beams. Followed by the waveplates converting two focused CP light beams to two focused LP light beams and upon mirror reflection, the beams are finally recombined by the PBS to form one focused light beam.